{"title":"碳纳米管作为互连:新兴技术和潜在的可靠性问题","authors":"Carl V. Thompson","doi":"10.1109/RELPHY.2008.4558914","DOIUrl":null,"url":null,"abstract":"The use of carbon nanotubes (CNTs) to replace or complement Cu-based IC interconnects is under wide-spread investigation. CNTs have low resistivities and can be configured to have low capacitive coupling, and are also chemically stable so that diffusion barriers are not needed. They can also carry very high current densities without damage. Properties and processing of CNTs for IC interconnects are reviewed and emerging technologies and possible reliability issues are discussed.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"85 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Carbon nanotubes as interconnects: Emerging technology and potential reliability issues\",\"authors\":\"Carl V. Thompson\",\"doi\":\"10.1109/RELPHY.2008.4558914\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of carbon nanotubes (CNTs) to replace or complement Cu-based IC interconnects is under wide-spread investigation. CNTs have low resistivities and can be configured to have low capacitive coupling, and are also chemically stable so that diffusion barriers are not needed. They can also carry very high current densities without damage. Properties and processing of CNTs for IC interconnects are reviewed and emerging technologies and possible reliability issues are discussed.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"85 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558914\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Carbon nanotubes as interconnects: Emerging technology and potential reliability issues
The use of carbon nanotubes (CNTs) to replace or complement Cu-based IC interconnects is under wide-spread investigation. CNTs have low resistivities and can be configured to have low capacitive coupling, and are also chemically stable so that diffusion barriers are not needed. They can also carry very high current densities without damage. Properties and processing of CNTs for IC interconnects are reviewed and emerging technologies and possible reliability issues are discussed.
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