低k介电材料随时间变化的介电击穿的非视觉缺陷的早期失效预测:屈服可靠性模型的实验验证

S. Yokogawa, D. Oshida, H. Tsuchiya, T. Taiji, T. Morita, Y. Tsuchiya, T. Takewaki
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引用次数: 10

摘要

针对低k介电材料的时变介质击穿(TDDB),提出了一种预测非视觉缺陷引起的早期失效(EF)的新方法。对产量-可靠性关系模型进行了修正,以评估EFs。采用65nm技术节点,实验验证了该方法的有效性。使用双峰寿命分布来评估寿命分布。根据结果和每片晶圆的缺陷密度,可以估计出缺陷发生的概率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Prediction of early failure due to non-visual defect on time-dependent dielectric breakdown of low-k dielectrics: Experimental verification of a yield-reliability model
A novel method for the prediction of early failure (EF) due to a non-visual defect is proposed for the time-dependent dielectric breakdown (TDDB) of low-k dielectrics. The yield-reliability relation model is modified to evaluate the EFs. The effectiveness of the novel method is experimentally confirmed by using a 65 nm technology node. A bimodal lifetime distribution is used to evaluate the lifetime distribution. The probability of EF can be estimated based on the basis of the results and the defect density of each wafer.
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