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2008 IEEE International Reliability Physics Symposium最新文献

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Memory design for high temperature radiation environments 用于高温辐射环境的存储器设计
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558870
Tai-hua Chen, Lawrence T. Clark, K. Holbert
{"title":"Memory design for high temperature radiation environments","authors":"Tai-hua Chen, Lawrence T. Clark, K. Holbert","doi":"10.1109/RELPHY.2008.4558870","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558870","url":null,"abstract":"This paper presents bulk CMOS memory circuits capable of both ultra-low voltage (subthreshold, i.e., VDD less than the transistor threshold voltage Vth) low power operation and high temperature operation at nominal VDD. One of the memory designs is radiation hardened by design (RHBD) using interleaved DICE storage cells, enclosed transistor geometries, and P-type guard rings. The other is not hardened against radiation. Experimental results are presented showing that the room temperature minimum VDD of the hardened device remains essentially unchanged from the pre-irradiation VDDMIN = 210 mV value after Co-60 irradiation to 4 Mrad(Si). The standby power supply current ISB of the device increases less than 2x from this level of irradiation. The RHBD memory design has been tested to be operational at temperatures of 225degC. The combined effects of high temperature and irradiation are also investigated for both designs.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129423411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Back stress model on electromigration lifetime prediction in short length copper interconnects 短长度铜互连电迁移寿命预测的背应力模型
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558988
Yi-Lung Cheng, S.Y. Lee, C. Chiu, K. Wu
{"title":"Back stress model on electromigration lifetime prediction in short length copper interconnects","authors":"Yi-Lung Cheng, S.Y. Lee, C. Chiu, K. Wu","doi":"10.1109/RELPHY.2008.4558988","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558988","url":null,"abstract":"The short length on the electromigration lifetime is a useful effect to increase current limits in advanced circuits. A way to increase current limit is to consider the Blech effect. The electromigration threshold due to Blech effect in copper interconnect for 65 nm and 45 nm technology is reported in this study. The critical product (jL)c was determined by varying the metal length and stress current density. The higher (jL)c value is obtained for lower stress current, shorter metal lead and 65 nm technology with higher hardness ILD. Finally, this critical product (jL)c as the accelerated EM length factor was used to predict the lifetime. It is shown that the lifetimes of short leads with less than 5 mum have at least 9.52 and 1.45 times higher than that of 250 mum metal lead for 65 nm and 45 nm technology, respectively.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124883355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide 超薄氧化物漏偏置TDDB寿命新模型及HCI对漏偏置TDDB的影响
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558888
P. Liao, C. Chen, J. Young, Y. Tsai, C.J. Wang, K. Wu
{"title":"A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide","authors":"P. Liao, C. Chen, J. Young, Y. Tsai, C.J. Wang, K. Wu","doi":"10.1109/RELPHY.2008.4558888","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558888","url":null,"abstract":"For the first time, a new drain-bias TBD lifetime model is proposed to precisely predict at various Vd, Vg and channel length for ultra thin oxide. The TBD lifetime with drain-bias can be decoupled to small voltage drop at drain-side increased TBD lifetime and hot carrier effect (HCI) degraded the TBD lifetime. The mechanism of oxide breakdown with drain-bias is also well understood as oxide traps distributed from the source side to the center of channel induce the oxide breakdown.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122421037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches 悬架形状对欧姆RF-MEMS冗余开关可靠性的影响
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558938
A. Tazzoli, V. Peretti, E. Autizi, G. Meneghesso
{"title":"Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches","authors":"A. Tazzoli, V. Peretti, E. Autizi, G. Meneghesso","doi":"10.1109/RELPHY.2008.4558938","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558938","url":null,"abstract":"The influence of the suspension shape on the electrical parameters and on the reliability of micro-machined ohmic series and shunt RF switches has been studied in this work. We have investigated how different spring constants influence the electrical parameters of RF-MEMS switches, in terms of the pull-in voltage, the pull-out voltage, and the evolution of scattering parameters during the DC sweep. The robustness to cycling stress has also been studied, considering different movable structures and bias voltages. We have also analyzed the behavior of RF-MEMS switches submitted to long continuous actuation, finding that meander based devices could suffer from extremely long release times, after an actuation period of some hours. However, straight beam based switches have not exhibited this problem. This unwanted behavior has been analyzed in terms of actuation time and RF-power level. The presence of bounces in the release phase has also been investigated on various types of switches with different topologies and suspended membrane thickness.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116547697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On-state reliability of solid-electrolyte switch 固体电解质开关的导通可靠性
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558999
N. Banno, T. Sakamoto, S. Fujieda, M. Aono
{"title":"On-state reliability of solid-electrolyte switch","authors":"N. Banno, T. Sakamoto, S. Fujieda, M. Aono","doi":"10.1109/RELPHY.2008.4558999","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558999","url":null,"abstract":"We examined the ON-state reliability of a solid electrolyte resistive switch,named ldquoNanoBridgerdquo, for programmable logic application. We found a trade-off between turn-off current and ON-state reliability and optimized the ON conductance. Through this optimization, we obtained high durability against DC current of ~0.2 mA at 105degC for 10 years and low turn-off current less than 5 mA. NanoBridge can thus meet the requirements for programmable logic applications.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125880533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Second breakdown behavior in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes 双极ESD保护器件在低电流长持续应力下的二次击穿行为及其与动电流管的关系
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558893
D. Johnsson, W. Mamanee, S. Bychikhin, D. Pogany, E. Gornik, M. Stecher
{"title":"Second breakdown behavior in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes","authors":"D. Johnsson, W. Mamanee, S. Bychikhin, D. Pogany, E. Gornik, M. Stecher","doi":"10.1109/RELPHY.2008.4558893","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558893","url":null,"abstract":"Bipolar ESD protection devices subjected to low current long pulse stress can sustain a relatively long time during thermal second breakdown without any damage. The effect is related to a particular current filamentary behavior, which is observed optically by TIM and explained by device simulation. It is also shown that the second breakdown is initiated at the edges of the device when a moving current-tube arrives at the device edge. Thus circular devices, having no edges, exhibit lower risk of second breakdown.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127073527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Low voltage Transient Voltage Suppressor with v-groove structure v型槽结构的低压暂态电压抑制器
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558898
Sheng-Huei Dai, C. Lin, Y. King
{"title":"Low voltage Transient Voltage Suppressor with v-groove structure","authors":"Sheng-Huei Dai, C. Lin, Y. King","doi":"10.1109/RELPHY.2008.4558898","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558898","url":null,"abstract":"Transient voltage suppressor (TVS) with v-groove structure is an off-chip device designed for protecting integrated circuits against electrostatic discharge (ESD) and electrical overstress (EOS). Compared with planar diodes, v-groove diodes provide much lower breakdown voltage under the same doping conditions. By selective etching using TMAH, the new TVS can be realized with well controlled v-groove tip angle and simple fabrication process. This new structure can be a low-cost, low breakdown voltage, and low capacitance solution for next generation TVS devices.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"115 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133768968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New insight into the relation between Hot Carrier degradation and oxide breakdown through MVHR 通过MVHR对热载流子降解与氧化物击穿关系的新认识
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558887
G. Ribes, D. Roy, M. Rafik, J. Roux, C. Parthasarathy
{"title":"New insight into the relation between Hot Carrier degradation and oxide breakdown through MVHR","authors":"G. Ribes, D. Roy, M. Rafik, J. Roux, C. Parthasarathy","doi":"10.1109/RELPHY.2008.4558887","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558887","url":null,"abstract":"Most of the oxide breakdown studies are based on the results of measurements in which the oxide is uniformly stressed thus avoiding the HCI (hot carrier injection) regime. As devices typically undergo hot carrier degradation during their operation, ignoring HCI degradation may result in overestimation of the oxide lifetime. In this paper, a deeper understanding of the relation between HCI and oxide breakdown is obtained based on MVHR (multivibrational hydrogen rRelease) mechanism. Subsequently we model the time to breakdown at different Vg, Vd conditions enabling oxide lifetime assessment in such stress conditions.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134300826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Ni silicide abnormal growth mechanism using advanced TEM techniques 先进透射电镜技术分析硅化镍异常生长机理
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558948
S. Kudo, Y. Hirose, N. Hashikawa, T. Yamaguchi, K. Kashihara, K. Maekawa, K. Asai, N. Murata, K. Asayama, E. Murakami
{"title":"Analysis of Ni silicide abnormal growth mechanism using advanced TEM techniques","authors":"S. Kudo, Y. Hirose, N. Hashikawa, T. Yamaguchi, K. Kashihara, K. Maekawa, K. Asai, N. Murata, K. Asayama, E. Murakami","doi":"10.1109/RELPHY.2008.4558948","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558948","url":null,"abstract":"We performed detailed analysis of the abnormal growth of Ni silicide that causes leakage-current failure in CMOS devices. We investigated the three-dimensional shape and the crystal microstructure of the abnormal growth by using advanced transmission electron microscope (TEM) techniques: electron tomography and spatially-resolved electron energy-loss spectroscopy (EELS). Furthermore, we revealed that the abnormal growth is related to crystal microstructure and crystal defects. This detailed information is important in the mechanism elucidation of abnormal growth of Ni silicide. To develop a highly reliable Ni salicide process, it is essential to understand the failure mechanism of abnormal growths of Ni silicide, especially for 45 nm node devices and beyond. To conclude, we discuss the solutions for the development of a successful Ni salicide process.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132742293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Comparison of accelerated DRAM soft error rates measured at component and system level 元件级和系统级加速DRAM软错误率的比较
2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558933
Ludger Borucki, G. Schindlbeck
{"title":"Comparison of accelerated DRAM soft error rates measured at component and system level","authors":"Ludger Borucki, G. Schindlbeck","doi":"10.1109/RELPHY.2008.4558933","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558933","url":null,"abstract":"Single event upsets from terrestrial cosmic rays (i.e. high-energy neutrons) are more important than alpha particle induced soft errors in modern DRAM devices. A high intensity broad spectrum neutron source from the Los Alamos Neutron Science Center (LANSCE) was used to characterize the nature of these upsets in DRAM technologies ranging from 180 nm down to 70 nm from several vendors at the DIMM component level using a portable memory tester. Another set of accelerated neutron beam tests were made with DRAM DIMMs mounted on motherboards. Soft errors were characterized using these two methods to determine the influence of neutron angle, frequency, data patterns and process technology. The purpose of this study is to analyze the effects of these differences on DRAM soft errors.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133279586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
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