{"title":"v型槽结构的低压暂态电压抑制器","authors":"Sheng-Huei Dai, C. Lin, Y. King","doi":"10.1109/RELPHY.2008.4558898","DOIUrl":null,"url":null,"abstract":"Transient voltage suppressor (TVS) with v-groove structure is an off-chip device designed for protecting integrated circuits against electrostatic discharge (ESD) and electrical overstress (EOS). Compared with planar diodes, v-groove diodes provide much lower breakdown voltage under the same doping conditions. By selective etching using TMAH, the new TVS can be realized with well controlled v-groove tip angle and simple fabrication process. This new structure can be a low-cost, low breakdown voltage, and low capacitance solution for next generation TVS devices.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"115 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low voltage Transient Voltage Suppressor with v-groove structure\",\"authors\":\"Sheng-Huei Dai, C. Lin, Y. King\",\"doi\":\"10.1109/RELPHY.2008.4558898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transient voltage suppressor (TVS) with v-groove structure is an off-chip device designed for protecting integrated circuits against electrostatic discharge (ESD) and electrical overstress (EOS). Compared with planar diodes, v-groove diodes provide much lower breakdown voltage under the same doping conditions. By selective etching using TMAH, the new TVS can be realized with well controlled v-groove tip angle and simple fabrication process. This new structure can be a low-cost, low breakdown voltage, and low capacitance solution for next generation TVS devices.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"115 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low voltage Transient Voltage Suppressor with v-groove structure
Transient voltage suppressor (TVS) with v-groove structure is an off-chip device designed for protecting integrated circuits against electrostatic discharge (ESD) and electrical overstress (EOS). Compared with planar diodes, v-groove diodes provide much lower breakdown voltage under the same doping conditions. By selective etching using TMAH, the new TVS can be realized with well controlled v-groove tip angle and simple fabrication process. This new structure can be a low-cost, low breakdown voltage, and low capacitance solution for next generation TVS devices.