v型槽结构的低压暂态电压抑制器

Sheng-Huei Dai, C. Lin, Y. King
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引用次数: 2

摘要

v型槽结构的瞬态电压抑制器(TVS)是一种用于保护集成电路免受静电放电(ESD)和电气过应力(EOS)影响的片外器件。与平面二极管相比,在相同掺杂条件下,v型槽二极管的击穿电压要低得多。通过TMAH的选择性蚀刻,可以实现v型槽尖端角可控、制作工艺简单的新型TVS。这种新结构可以为下一代TVS器件提供低成本、低击穿电压和低电容的解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low voltage Transient Voltage Suppressor with v-groove structure
Transient voltage suppressor (TVS) with v-groove structure is an off-chip device designed for protecting integrated circuits against electrostatic discharge (ESD) and electrical overstress (EOS). Compared with planar diodes, v-groove diodes provide much lower breakdown voltage under the same doping conditions. By selective etching using TMAH, the new TVS can be realized with well controlled v-groove tip angle and simple fabrication process. This new structure can be a low-cost, low breakdown voltage, and low capacitance solution for next generation TVS devices.
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