障碍对双大马士革铜触点可靠性的影响

K. Wang, C. Wilson, A. Cuthbertson, R. Herberholz, H. Coulson, A. O'Neill, A. Horsfall
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引用次数: 3

摘要

本文利用热应力和电应力研究了Cu与Ta和W基势垒接触的可靠性。Ta基势垒具有优异的抗电应力能力,其失效时间接近w -塞的参考值,失效模式类似于通孔。然而,由于金属前介质施加的高工艺诱导应力,早期失效降低了t50。这些初步结果表明,通过进一步的工艺优化来降低热应力并提高势垒均匀性,Cu与Ta基势垒的接触可以像在高级金属层中的过孔和传统的W接触一样可靠。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of barriers on the reliability of dual damascene copper contacts
In this paper we investigate the reliability of Cu contacts with both Ta and W based barriers using thermal and electrical stressing. The Ta based barrier showed superior resistance to electrical stressing, with a time-to-failure approaching that of the W-plug reference and a via like failure mode. However early fails reduce the t50 due to high process induced stress imposed by the pre-metal dielectric. These initial results suggest, with further process optimization to reduce thermal stress and improve barrier uniformity, Cu contacts with Ta based barriers can be as reliable as vias in higher metals layers and the traditional W contacts.
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