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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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Impact of the buried oxide thickness in UV laser heated 3D stacks 埋藏氧化物厚度对UV激光加热三维堆的影响
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.a-6-03
Pierre Morin, Toshiyuki Tabata, Fabien Rozé, Mohamed Saib, Hilde Thielens, Louis Thuries, Karim Huet, F. Mazzamuto
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引用次数: 2
Advances in Aperture-Suspended Bilayers for Parallel Ion Channel Recordings 用于平行离子通道记录的孔悬浮双层膜的研究进展
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.g-6-05
Ruoyu Hu, Josip Ivica, M. D. Planque
{"title":"Advances in Aperture-Suspended Bilayers for Parallel Ion Channel Recordings","authors":"Ruoyu Hu, Josip Ivica, M. D. Planque","doi":"10.7567/ssdm.2021.g-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.g-6-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130161512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain 在高漏极电流密度>1A/mm的高掺硼源极和漏极金刚石mosfet中，最低接触电阻
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.d-3-05
Fuga Asai, K. Kudara, Masakazu Arai, Yukiko Suzuki, A. Hiraiwa, Hiroshi Kawarada
{"title":"Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain","authors":"Fuga Asai, K. Kudara, Masakazu Arai, Yukiko Suzuki, A. Hiraiwa, Hiroshi Kawarada","doi":"10.7567/ssdm.2021.d-3-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-3-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128829677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operando Hard X-ray Photoelectron Spectroscopy Study of Buried Interface Chemistry of Au/In2O3/Al2O3/p+-Si Stacks under Applied Bias 应用偏压下Au/In2O3/Al2O3/p+-Si层埋藏界面化学的操作硬x射线光电子能谱研究
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.j-5-02
Ibrahima Gueye, Riku Kobayashi, Shigenori Ueda, T. Nabatame, K. Tsukagoshi, Atsushi Ogura, Takahiro Nagata
{"title":"Operando Hard X-ray Photoelectron Spectroscopy Study of Buried Interface Chemistry of Au/In2O3/Al2O3/p+-Si Stacks under Applied Bias","authors":"Ibrahima Gueye, Riku Kobayashi, Shigenori Ueda, T. Nabatame, K. Tsukagoshi, Atsushi Ogura, Takahiro Nagata","doi":"10.7567/ssdm.2021.j-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.j-5-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127622677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of n+-AZO/p-BaSi2 heterojunction solar cells with Zn1-xGexO interlayers 具有Zn1-xGexO中间层的n+-AZO/p-BaSi2异质结太阳能电池的形成
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.f-4-05
Y. Yamashita, K. Toko, Olindo Isabella, T. Suemasu
{"title":"Formation of n+-AZO/p-BaSi2 heterojunction solar cells with Zn1-xGexO interlayers","authors":"Y. Yamashita, K. Toko, Olindo Isabella, T. Suemasu","doi":"10.7567/ssdm.2021.f-4-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.f-4-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116012126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bandgap Structure and Electron Transportation Efficiency for the Scintillator using Ce:La-GPS crystals Ce:La-GPS晶体闪烁体的带隙结构和电子输运效率
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.k-4-06
S. Kurosawa, A. Yamaji, R. Murakami, Y. Shoji, Akira Yoshikawa
{"title":"Bandgap Structure and Electron Transportation Efficiency for the Scintillator using Ce:La-GPS crystals","authors":"S. Kurosawa, A. Yamaji, R. Murakami, Y. Shoji, Akira Yoshikawa","doi":"10.7567/ssdm.2021.k-4-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.k-4-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121205092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Thermal Budget Epitaxial Lift Off for Ge (111)-on-Insulator Structure 绝缘体上锗(111)结构的低热预算外延升力
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.a-4-04
W. Chang, H. Wan, Yi-Ting Cheng, Y. Lin, Toshifumi Irisawa, H. Ishii, J. Kwo, Minghwei Hong, T. Maeda
{"title":"Low Thermal Budget Epitaxial Lift Off for Ge (111)-on-Insulator Structure","authors":"W. Chang, H. Wan, Yi-Ting Cheng, Y. Lin, Toshifumi Irisawa, H. Ishii, J. Kwo, Minghwei Hong, T. Maeda","doi":"10.7567/ssdm.2021.a-4-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-4-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122331295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
One-dimensional van der Waals heterostructures for devices 器件的一维范德华异质结构
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.h-5-01
Rong Xiang
{"title":"One-dimensional van der Waals heterostructures for devices","authors":"Rong Xiang","doi":"10.7567/ssdm.2021.h-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.h-5-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127085139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation 用第一性原理计算研究IGZO FET负偏置光降解机理
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.j-5-04
Tomonori Nakayama, Masahiro Takahashi, H. Kunitake, Kuo-Chang Huang, H. Yoshida, Miller Liao, Shou-Zen Chang, Shunpei Yamazaki
{"title":"Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation","authors":"Tomonori Nakayama, Masahiro Takahashi, H. Kunitake, Kuo-Chang Huang, H. Yoshida, Miller Liao, Shou-Zen Chang, Shunpei Yamazaki","doi":"10.7567/ssdm.2021.j-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.j-5-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125733238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IGZO front-gated TFTs for 3D DRAMs: Process and device advancement 用于3D dram的IGZO前置门控TFTs:工艺和器件进展
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.j-6-03
N. Rassoul, S. Subhechha, Kaustuv Banerjee, A. Belmonte, Gabriele Donadio, H. Puliyalil, Murat Pak, Ming Mao, Lieve Teugels, Diana Tsvetanova, Shreya Kundu, Nina Bazzazian, Harold Dekkers, Michiel J. van Setten, A. Chasin, Jef Geypen, J. Heijlen, Davide Crotti, L. D. Piazza, L. Goux, R. Delhougne, G. Kar
{"title":"IGZO front-gated TFTs for 3D DRAMs: Process and device advancement","authors":"N. Rassoul, S. Subhechha, Kaustuv Banerjee, A. Belmonte, Gabriele Donadio, H. Puliyalil, Murat Pak, Ming Mao, Lieve Teugels, Diana Tsvetanova, Shreya Kundu, Nina Bazzazian, Harold Dekkers, Michiel J. van Setten, A. Chasin, Jef Geypen, J. Heijlen, Davide Crotti, L. D. Piazza, L. Goux, R. Delhougne, G. Kar","doi":"10.7567/ssdm.2021.j-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.j-6-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127732192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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