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Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI:10.7567/ssdm.2021.j-5-04
Tomonori Nakayama, Masahiro Takahashi, H. Kunitake, Kuo-Chang Huang, H. Yoshida, Miller Liao, Shou-Zen Chang, Shunpei Yamazaki
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用第一性原理计算研究IGZO FET负偏置光降解机理
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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