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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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Amplifier Circuit Consisting of the FET-type Gas Sensors with Tunable FET Load 具有可调谐FET负载的FET型气体传感器的放大电路
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.g-5-06
Y. Jeong, Wonjun Shin, Seongbin Hong, Gyuweon Jung, Chayoung Lee, Jinwoo Park, Donghee Kim, Jong-Ho Lee
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引用次数: 0
Luminescent Properties for Garnet-Type Crystals with Fast Decay Time and Red Emission Band 具有快衰减时间和红色发射带的石榴石型晶体的发光特性
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.k-4-05
Chihaya Fujiwara, S. Kurosawa, A. Yamaji, Satoshi Ishizawa, Yuji Ohashi, Y. Yokota, Kei Kamata, H. Sato, Satoshi Toyoda, M. Yoshino, Takashi Hanada, Akira Yoshikawa
{"title":"Luminescent Properties for Garnet-Type Crystals with Fast Decay Time and Red Emission Band","authors":"Chihaya Fujiwara, S. Kurosawa, A. Yamaji, Satoshi Ishizawa, Yuji Ohashi, Y. Yokota, Kei Kamata, H. Sato, Satoshi Toyoda, M. Yoshino, Takashi Hanada, Akira Yoshikawa","doi":"10.7567/ssdm.2021.k-4-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.k-4-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127019000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ Deposited HfO2 and Y2O3 on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties Epi-Si/p-Ge表面原位沉积HfO2和Y2O3 -界面性能的比较研究
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.a-4-07
Tien-Yu Chu, H. Wan, Yi-Ting Cheng, Chao-Kai Cheng, Y. Hong, Jueinai Kwo, Minghwei Hong
{"title":"In-situ Deposited HfO2 and Y2O3 on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties","authors":"Tien-Yu Chu, H. Wan, Yi-Ting Cheng, Chao-Kai Cheng, Y. Hong, Jueinai Kwo, Minghwei Hong","doi":"10.7567/ssdm.2021.a-4-07","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-4-07","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117017301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Portable External Cavity Quantum Cascade for mid-infrared spectroscopy applications 用于中红外光谱应用的便携式外腔量子级联
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.g-5-08
Mauro Pazmiño Betancourth, Richard A. Hogg, David Childs
{"title":"Portable External Cavity Quantum Cascade for mid-infrared spectroscopy applications","authors":"Mauro Pazmiño Betancourth, Richard A. Hogg, David Childs","doi":"10.7567/ssdm.2021.g-5-08","DOIUrl":"https://doi.org/10.7567/ssdm.2021.g-5-08","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128088491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Positive Magnetoresistance in Weyl Semimetals Originating from Chiral Anomaly 源自手性异常的Weyl半金属中的正磁电阻
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.i-6-06
K. Morishima, Kenji Kondo
{"title":"Positive Magnetoresistance in Weyl Semimetals Originating from Chiral Anomaly","authors":"K. Morishima, Kenji Kondo","doi":"10.7567/ssdm.2021.i-6-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.i-6-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134552332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Universal Method on Charge Carrier Mobility and Series Resistance Extraction in Two-Dimensional Field-Effect Transistors 二维场效应晶体管载流子迁移率和串联电阻提取的通用方法
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.h-6-06
Yu-Chieh Chien, Xuewei Feng, Kai-Chun Chang, W. Tan, Sifan Li, Li Chen, Li Huang, K. Ang
{"title":"Universal Method on Charge Carrier Mobility and Series Resistance Extraction in Two-Dimensional Field-Effect Transistors","authors":"Yu-Chieh Chien, Xuewei Feng, Kai-Chun Chang, W. Tan, Sifan Li, Li Chen, Li Huang, K. Ang","doi":"10.7567/ssdm.2021.h-6-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.h-6-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134569063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogenation on Tunnel Nitride Passivated Contacts by Catalytically Generated Atomic Hydrogen 催化生成原子氢对隧道氮化物钝化触点的加氢作用
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.f-5-03
Yuli Wen, H. Tu, Keisuke Ohdaira
{"title":"Hydrogenation on Tunnel Nitride Passivated Contacts by Catalytically Generated Atomic Hydrogen","authors":"Yuli Wen, H. Tu, Keisuke Ohdaira","doi":"10.7567/ssdm.2021.f-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.f-5-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133912277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optically pumped lasing from solution-grown single crystals of 5,5’’’-Bis(4-bi-phenylyl)-2,2’:5’,2’’:5’’,2’’’-quaterthiophene 溶液生长的5,5 ' ' -双(4-双苯基)-2,2 ':5 '，2 ':5 '，2 ':5 '，2 ' -季噻吩单晶的光泵浦激光
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.k-4-04
Takumi Matsuo, Fumio Sasaki, H. Yanagi
{"title":"Optically pumped lasing from solution-grown single crystals of 5,5’’’-Bis(4-bi-phenylyl)-2,2’:5’,2’’:5’’,2’’’-quaterthiophene","authors":"Takumi Matsuo, Fumio Sasaki, H. Yanagi","doi":"10.7567/ssdm.2021.k-4-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.k-4-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"201 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114048818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transparent ZnO Thin Film Transistors Fully Fabricated by Atomic-Layer-Deposition Process 全原子层沉积法制备ZnO透明薄膜晶体管
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.j-5-08
Junchen Dong, Jingyi Wang, Qi Li, Dengqing Xu, Jingye Xie, Kai Zhao, Dedong Han, Yi Wang, Xing Zhang
{"title":"Transparent ZnO Thin Film Transistors Fully Fabricated by Atomic-Layer-Deposition Process","authors":"Junchen Dong, Jingyi Wang, Qi Li, Dengqing Xu, Jingye Xie, Kai Zhao, Dedong Han, Yi Wang, Xing Zhang","doi":"10.7567/ssdm.2021.j-5-08","DOIUrl":"https://doi.org/10.7567/ssdm.2021.j-5-08","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124229832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO2/4H-SiC(11-20) Interfaces NO氮化SiO2/4H-SiC(11-20)界面的综合物理和电气特性
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.d-4-03
Takato Nakanuma, Yuu Iwakata, T. Hosoi, Takuma Kobayashi, M. Sometani, Mitsuo Okamoto, T. Shimura, Heiji Watanabe
{"title":"Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO2/4H-SiC(11-20) Interfaces","authors":"Takato Nakanuma, Yuu Iwakata, T. Hosoi, Takuma Kobayashi, M. Sometani, Mitsuo Okamoto, T. Shimura, Heiji Watanabe","doi":"10.7567/ssdm.2021.d-4-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-4-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121333162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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