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Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO2/4H-SiC(11-20) Interfaces

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI:10.7567/ssdm.2021.d-4-03
Takato Nakanuma, Yuu Iwakata, T. Hosoi, Takuma Kobayashi, M. Sometani, Mitsuo Okamoto, T. Shimura, Heiji Watanabe
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NO氮化SiO2/4H-SiC(11-20)界面的综合物理和电气特性
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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