Micromachines最新文献_第2页

Improved Operation of the Modified Non-Inverting Step-Down/Up (MNI-SDU) DC-DC Converter. 改进的非反相降压/上升（mini - sdu） DC-DC变换器的改进操作。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-20 DOI: 10.3390/mi16091063

Juan A Villanueva-Loredo, Julio C Rosas-Caro, Panfilo R Martinez-Rodriguez, Christopher J Rodriguez-Cortes, Diego Langarica-Cordoba, Gerardo Vazquez-Guzman

{"title":"Improved Operation of the Modified Non-Inverting Step-Down/Up (MNI-SDU) DC-DC Converter.","authors":"Juan A Villanueva-Loredo, Julio C Rosas-Caro, Panfilo R Martinez-Rodriguez, Christopher J Rodriguez-Cortes, Diego Langarica-Cordoba, Gerardo Vazquez-Guzman","doi":"10.3390/mi16091063","DOIUrl":"10.3390/mi16091063","url":null,"abstract":"This paper presents an enhanced operation strategy for a recently proposed converter called Modified Non-Inverting Step-Down/Up (MNI-SDU) DC-DC converter intended for battery voltage regulation. Unlike the conventional approach, where both switching stages share a single duty cycle, the proposed method controls asynchronously the two duty cycles through a fixed time offset to optimize performance. A methodology is developed to define suitable duty cycle ranges that ensure proper converter operation according to input/output voltage specifications, while simultaneously reducing the current and voltage ripples and electrical stress in the capacitor and semiconductors. Furthermore, a model-based control strategy is proposed, taking into account the enhanced operational characteristics. Consequently, a PI-PI current-mode controller is designed using loop shaping techniques to maintain the output voltage regulated at the desired level. The proposed approach is analyzed mathematically and validated through experimental results. The findings demonstrate that optimizing through asynchronous duty-cycle control with a fixed time offset improves ripple, stress values, and overall efficiency, while maintaining robust output voltage regulation, making this method well-suited for applications requiring compact and reliable power conversion.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12471981/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge Trapping Effects on n-MOSFET Current Mirrors Under TID Radiation. TID辐射下n-MOSFET电流镜的电荷俘获效应。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-20 DOI: 10.3390/mi16091064

Dorsaf Aguir, Sedki Amor, Laurent A Francis, Mohsen Machhout

{"title":"Charge Trapping Effects on n-MOSFET Current Mirrors Under TID Radiation.","authors":"Dorsaf Aguir, Sedki Amor, Laurent A Francis, Mohsen Machhout","doi":"10.3390/mi16091064","DOIUrl":"10.3390/mi16091064","url":null,"abstract":"This study aims to evaluate the effects of total ionizing dose (TID) radiation on the performance of n-MOSFET current mirrors. We propose an ovel experimental approach to analyze the interaction between charge trapping in the MOSFET gate oxide and the resulting current mirror degradation by subjecting devices to TID doses from 50 krad(Si) to 300 krad(Si) using a 60Co gamma source Experimental data show that threshold voltage shifts by up to 1.31 V and transconductance increases by 27%. This degradation leads to this a reduction of more than 10% in current mirror output accuracy occurs at the highest dose. These quantitative criteria establish a clear benchmark for assessing the impact of TID on current mirror performance. These effects are attributed to positive charge trapping in the gate oxide and at the Si-SiO2 interface induced by ionizing radiation. This study focuses exclusively on radiation effects; electrical stress phenomena such as over-voltage or electrostatic discharge (ESD) are not addressed. The results highlight the critical importance of accounting for TID effects when designing high-performance n-MOSFET current mirrors for radiation-hardened applications.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12471395/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

LiDAR-Based Safety Envelope Detection with Accelerometer and DTW for Intrusion Localization in Roller Coasters. 基于加速度计和DTW的激光雷达安全包络检测在过山车入侵定位中的应用。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-19 DOI: 10.3390/mi16091062

Huajie Wang, Zhao Zhao, Yifeng Sun, Weikei Song

{"title":"LiDAR-Based Safety Envelope Detection with Accelerometer and DTW for Intrusion Localization in Roller Coasters.","authors":"Huajie Wang, Zhao Zhao, Yifeng Sun, Weikei Song","doi":"10.3390/mi16091062","DOIUrl":"10.3390/mi16091062","url":null,"abstract":"Autonomous vehicles, submersible robotic systems and drones, and other human-carrying equipment consistently adhere to a safety perimeter, ensuring collision-free navigation amidst surrounding objects. In contrast, roller coaster vehicles, despite being constrained to a predetermined track, necessitate frequent safety distance detection owing to the variability introduced by trees and decorative installations. Passengers' limbs may protrude beyond vehicle boundaries, posing a collision hazard. The motion range of limbs, influenced by vehicle-specific conditions, mismatches standardized safety volumes (cylindrical, cubic, and rectangular) designed for mobile entities. The roller coaster industry's current practice involves a moving safety frame, which visually inspects for collisions to assess safety distances, which is cumbersome and prone to oversight in intricate settings. Therefore, this study introduces a novel safety envelope detector (SE-detector). It creates a customer-defined virtual safety envelope around the roller coaster vehicle and measures the safety distance based on LiDAR (Light Detection and Ranging) to detect the intrusions of obstacles. Meanwhile, this SE-detector also innovatively integrated an accelerometer to synchronously measure the acceleration of the vehicle. The measured acceleration will be aligned with simulated sequences by dynamic time warping (DTW) algorithms to pinpoint intrusion location. Additionally, a wide-angle camera is also deployed to enhance perception of the surrounding environment. The SE-detector developed in this study has the capability to record inspection results. It is expected to enhance the inspection capabilities of the safety envelope for roller coasters, thereby improving the efficiency of safety distance inspection.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12471903/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polyurethane-Based Electronic Packaging: The Characterization of Natural Aging over a Decade. 聚氨酯基电子封装：十年来自然老化的表征。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-18 DOI: 10.3390/mi16091061

Xiaoqin Wei, Han Li, Rui Zhou, Changcheng Xie, Honglong Ning

{"title":"Polyurethane-Based Electronic Packaging: The Characterization of Natural Aging over a Decade.","authors":"Xiaoqin Wei, Han Li, Rui Zhou, Changcheng Xie, Honglong Ning","doi":"10.3390/mi16091061","DOIUrl":"10.3390/mi16091061","url":null,"abstract":"Electronic devices with polyurethane electronic packaging have been stored in Chinese tropical marine atmosphere environments for 10 years. The long-term natural aging mechanism was studied by comparing the appearance inspection, molecular structure, elemental content, and chemical functional groups of the surface and interior of polyurethane electronic potting. The results indicated that, despite evident chemical aging and physical changes in the encapsulant material, it continued to effectively protect the internal electronic devices, maintaining their performance within an acceptable range. The interior polyurethane potting of electronic devices was white, but the surface turned yellow with noticeable color change. On the surface, the content of tolylene diisocyanate was greatly decreased. The peak heights of the internal carbamate groups located at 1708 cm-1 and 1529 cm-1 were significantly higher than those at the surface. In addition, the internal C element content for the carbamate group at 289.5 eV was higher than that of the surface. It can be inferred that, under ambient temperature and trace oxygen conditions, the urethane groups on the polyurethane electronic potting surface undergo aging reactions. These groups slowly oxidize into the quinoid structure of the chromophore, causing the surface to turn yellow. Despite this discoloration, the potting still protects electronic devices. Therefore, polyurethane electronic potting is ideal for the long-term sealed storage of electronic devices.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12472016/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Double-Diamond Microreactor Design for Enhanced Mixing and Nanomaterial Synthesis. 一种用于增强混合和纳米材料合成的新型双金刚石微反应器设计。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-18 DOI: 10.3390/mi16091058

Qian Peng, Guangzu Wang, Chao Sheng, Haonan Wang, Yao Fu, Shenghong Huang

{"title":"A Novel Double-Diamond Microreactor Design for Enhanced Mixing and Nanomaterial Synthesis.","authors":"Qian Peng, Guangzu Wang, Chao Sheng, Haonan Wang, Yao Fu, Shenghong Huang","doi":"10.3390/mi16091058","DOIUrl":"10.3390/mi16091058","url":null,"abstract":"This study introduces the Double-Diamond Reactor (DDR), a novel planar passive microreactor designed to overcome the following conventional limitations: inefficient mass transfer, high flow resistance, and clogging. The DDR integrates splitting-turning-impinging (STI) hydrodynamic principles via CFD-guided optimization, generating chaotic advection to enhance mixing. Experimental evaluations using Villermaux-Dushman tests showed a segregation index (Xs) as low as 0.027 at 100 mL·min-1, indicating near-perfect mixing. In BaSO4 nanoparticle synthesis, the DDR achieved a 46% smaller average particle size (95 nm) and narrower distribution (σg=1.27) compared to reference designs (AFR-1), while maintaining low pressure drops (<20 kPa at 60 mL·min-1). The DDR's superior performance stems from its hierarchical flow division and concave-induced vortices, which eliminate stagnant zones. This work demonstrates the DDR's potential for high-throughput nanomaterial synthesis with precise control over particle characteristics, offering a scalable and energy-efficient solution for advanced chemical processes.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12471506/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Reconfigurable Low-Pass Filter Based on Polyurethane Substrate Inspired by the Origami Structure. 受折纸结构启发的基于聚氨酯基板的可重构低通滤波器。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-18 DOI: 10.3390/mi16091060

Kang Wang, Mingcheng Li, Chuyuan Gao, Yupeng Dong, Yutang Pan, Ming Qin, Meng Nie, Lei Han

引用次数: 0

Non-Free Cutting Mechanism of Asymmetrical Nanogrooves Under Chip-Removal Interference in Amorphous Nickel Phosphorus. 非晶镍磷中非对称纳米沟槽的非自由切削机制。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-18 DOI: 10.3390/mi16091059

Yupeng He, Yingzhao Cai, Minkun Huang, Benshuai Ruan, Peng Liu, Tianfeng Zhou

{"title":"Non-Free Cutting Mechanism of Asymmetrical Nanogrooves Under Chip-Removal Interference in Amorphous Nickel Phosphorus.","authors":"Yupeng He, Yingzhao Cai, Minkun Huang, Benshuai Ruan, Peng Liu, Tianfeng Zhou","doi":"10.3390/mi16091059","DOIUrl":"10.3390/mi16091059","url":null,"abstract":"Asymmetrical nanogrooves are commonly employed as blazed gratings for precision measurement, optical communication, and optical sensing applications. Diamond cutting is a promising deterministic processing technology for nanogrooves with a triangular cross-section profile. Non-free cutting of nanogrooves makes it hard to suppress the cutting-caused deformation because of the low stiffness of nanogrooves. Focusing on the influence of non-free cutting on the deformation of asymmetrical nanogrooves, this paper systematically investigates the asymmetrical nanogroove cutting in amorphous nickel phosphorous material through mechanism revelation, simulation analysis, and experimental discussion. The materials removal mechanism by two side edges with different slopes in the non-free cutting is revealed according to the shear interference. According to the relative feed direction between tool and workpiece, two types of feed cases in the asymmetrical nanogrooves, named D1 and D2, respectively, are investigated by comparison in terms of deformation mechanism, nanogrooves topography, and nodal stress of tool edges. The extrusion by tool edges and the squeeze by the chip flow mainly influence the deformation of nanogrooves. In the D1 case, the horizontal component of squeeze by the chip flow towards the rear just-fabricated nanogroove, and the severely deformed nanogrooves are stacking together. On the contrary, in the D2 case, the flowing chip squeezes the front uncut materials, relieving the cutting-caused deformation, and asymmetrical nanogrooves have clear V-shaped cross-section profiles. It is proven that the D2 strategy is more suitable for asymmetrical nanogroove machining. The work in this paper will contribute to further understanding of non-free cutting and the processing technology of asymmetrical nanogrooves.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12471719/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Confidence and Interpretability of a CNN-Based Wafer Defect Classification Model Using Temperature Scaling and LIME. 基于温度缩放和石灰的cnn晶圆缺陷分类模型的可信度和可解释性。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-17 DOI: 10.3390/mi16091057

Jieun Lee, Yeonwoo Ju, Junho Lim, Sungmin Hong, Soo-Whang Baek, Jonghwan Lee

{"title":"Enhancing Confidence and Interpretability of a CNN-Based Wafer Defect Classification Model Using Temperature Scaling and LIME.","authors":"Jieun Lee, Yeonwoo Ju, Junho Lim, Sungmin Hong, Soo-Whang Baek, Jonghwan Lee","doi":"10.3390/mi16091057","DOIUrl":"10.3390/mi16091057","url":null,"abstract":"Accurate classification of defects in the semiconductor manufacturing process is critical for improving yield and ensuring quality. While previous works have mainly focused on improving classification accuracy, we propose a model that can simultaneously assess accuracy, prediction confidence, and interpretability in wafer defect classification. To solve the class imbalance problem, we used a weighted cross-entropy loss function and convolutional neural network-based model to achieve a high accuracy of 97.8% on the test dataset and applied a temperature-scaling technique to enhance confidence. Furthermore, by simultaneously employing local interpretable model-agnostic explanations and gradient-weighted class activation mapping, the rationale for the predictions of the model was visualized, allowing users to understand the decision-making process of the model from various perspectives. This research can provide a direction for the next generation of intelligent quality management systems by enhancing the applicability of the proposed model in actual semiconductor production sites through explainable predictions.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12472186/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface Integrity of Glass-Ceramics by Laser-Assisted Diamond Cutting. 激光辅助金刚石切割微晶玻璃表面完整性研究。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-16 DOI: 10.3390/mi16091054

Jiawei Li, Fang Ji, Feifei Xu

{"title":"Surface Integrity of Glass-Ceramics by Laser-Assisted Diamond Cutting.","authors":"Jiawei Li, Fang Ji, Feifei Xu","doi":"10.3390/mi16091054","DOIUrl":"10.3390/mi16091054","url":null,"abstract":"Glass-ceramic optical components are extensively employed in advanced optical systems. The high-hardness and low-fracture toughness of glass-ceramics make it prone to cracks and subsurface damage during conventional cutting. The laser-assisted diamond cutting method can significantly improve the nano-cutting performance of glass-ceramics by locally heating and softening the material. However, its dynamic removal mechanisms remain unclear. The coupling mechanisms between the laser thermal field and the mechanical response of the material require further investigation. This study aims to reveal the dynamic removal mechanisms of glass-ceramics under laser-assisted nanoscale cutting conditions through numerical simulations and systematic experiments. It includes a systematic analysis of the effects of laser heating on chip morphology, temperature fields, stress fields, and cutting forces using a laser-assisted nano-cutting model. Additionally, through nanoscale taper cutting experiments, this study quantifies the enhancement effect of laser power on the critical depth of no observed surface cracks (NOSC). Finally, subsurface integrity results elucidate the mechanisms through which laser assistance inhibits crack propagation. The findings will provide theoretical support for optimizing laser-assisted cutting parameters and achieving high-quality machining of glass-ceramics.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12471301/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Power-Law Reliability Plotting for Microelectronics. 微电子的幂律可靠性绘图。

IF 3 3区工程技术

Micromachines Pub Date : 2025-09-16 DOI: 10.3390/mi16091055

Joseph B Bernstein

{"title":"Power-Law Reliability Plotting for Microelectronics.","authors":"Joseph B Bernstein","doi":"10.3390/mi16091055","DOIUrl":"10.3390/mi16091055","url":null,"abstract":"The power-law time plotting for reliability prediction needs to be reexamined. Until now, most degradation plots in microelectronics reliability analysis assume that the data follow a power-law change in time. The plot is the change in a measured parameter versus the log of time, based on the principle that one can calculate exactly the initial indicator value, S0, and from that, extrapolate any change in that parameter, ΔS(t), as a power-law with time, t1/m. The normalized change, ΔS(t)/S0, relies heavily on a precise value for S0 such that the calculated power-law exponent, m, may be exaggerated such that extrapolated time-to-fail calculations will be optimistic, even by many orders of magnitude. Also, the extrapolated lifetime may be pessimistic, also by orders of magnitude in time. We show that by transforming the x-axis as the time to a power of 1/m, choosing m by setting the second order of a polynomial curve fit to zero, a more accurate prediction can be achieved with a realistic time to fail given the accelerated testing conditions. We also show how to determine what the correct power of time is using a linear fit to a second-order polynomial. The plotting principles presented here are independent of any physics, rather an empirical focus on how to plot the data according to a power-law in time assumption.","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"16 9","pages":""},"PeriodicalIF":3.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12471611/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145176198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0