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2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)最新文献

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A 26-44 GHz Programmable Frequency Divider for Wideband MM-Wave 26-44 GHz宽带毫米波可编程分频器
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754127
Zijuan Chen, Zengjia Wang, Huimin Liu, Wenshen Wang
{"title":"A 26-44 GHz Programmable Frequency Divider for Wideband MM-Wave","authors":"Zijuan Chen, Zengjia Wang, Huimin Liu, Wenshen Wang","doi":"10.1109/EDSSC.2019.8754127","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754127","url":null,"abstract":"The design of a 44 GHz programmable divider with a division range of256-508 for millimeter wave application, is presented, using a 55 nm CMOS technology. The divider consists of a divide-by-4 input stage, a prescaler that implements mixture structure D flip-flops to enhance operating speed, two subtraction counters and control logic. By using a new control logic circuit structure with transmission gate optimized the speed and power dissipation of the whole divider. The simulation results show a wide frequency range of 26-44 GHz, a power consumption of15.2 mW under 1.2 V power supply.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115798740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A New Insight into the Negative Resistance Phenomenon with the Evolution of Current Filaments in FRD’s Reverse Recovery FRD反向恢复中电流细丝演变的负电阻现象新认识
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754391
Peng Li, Chunlei Jia, Chenjing Liu, Shusheng Wang, Shengyang Xiong, Yu B. Wu
{"title":"A New Insight into the Negative Resistance Phenomenon with the Evolution of Current Filaments in FRD’s Reverse Recovery","authors":"Peng Li, Chunlei Jia, Chenjing Liu, Shusheng Wang, Shengyang Xiong, Yu B. Wu","doi":"10.1109/EDSSC.2019.8754391","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754391","url":null,"abstract":"For the first time, this paper reveals and explains the details how to comprehend and deduce the evolution of current filaments in FRD by the negative resistance phenomenon presented in reverse recovery I-V curve. Further study on simulation data shows that the curve shape of voltage clamping period is caused by the generation of solitary filaments, and the definite correspondence relationship of them is discussed.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115414874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cell image reconstruction for a lens-free imaging system based on linear array Sensor 基于线阵传感器的无透镜成像系统的细胞图像重建
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8753925
Li Dai, Jianwei Li, N. Yu
{"title":"Cell image reconstruction for a lens-free imaging system based on linear array Sensor","authors":"Li Dai, Jianwei Li, N. Yu","doi":"10.1109/EDSSC.2019.8753925","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8753925","url":null,"abstract":"This paper presents a novel lens-free microfluidic cell image acquisition system based on a linear array image sensor. A microfluidic chip is designed fabricated to control cells to pass through the microchannel steadily. Under the microfluidic chip, a linear array image sensor is placed to acquire the cell image. Then the cell image can be reconstructed, segmented and analyzed. The experimental results show that the system can effectively improve the quality of cell images. In view of the urgent need for point-of-care testing, this system is suitable for portable, low-cost, easy-to-use lens-free cell detection devices in the future.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"266 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122174975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Controlled Photoluminescence Enhancement of High Efficiency Quantum Dots by Localized Surface Plasmons 局域表面等离子体对高效量子点可控光致发光的增强
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754038
J. Zhao, Lixuan Chen, Miao Zhou, Hsiaohsien Chen, Hsi-Chien Lin, Xin Zhang, Hang Zhou
{"title":"Controlled Photoluminescence Enhancement of High Efficiency Quantum Dots by Localized Surface Plasmons","authors":"J. Zhao, Lixuan Chen, Miao Zhou, Hsiaohsien Chen, Hsi-Chien Lin, Xin Zhang, Hang Zhou","doi":"10.1109/EDSSC.2019.8754038","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754038","url":null,"abstract":"We report the highly controlled enhancement of fluorescence emission from high efficiency quantum dots (QDs) excited by localized surface plasmons (LSP) on nanostructured metal surfaces. The fluorescence enhancement foctor was controlled by tuning the excitation wavelength, metals LSP resonance bands, the thickness of QDs film and the gaps between QDs and metals.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122902802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On-Chip Excessive Heating Protection Scheme for Uncooled Micro-Bolometer Imagers 非冷却微辐射热计成像仪片上过热保护方案
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754357
Dahe Liu, Xueyou Shi, Guangyi Chen, Wengao Lu, Zhongjian Chen
{"title":"On-Chip Excessive Heating Protection Scheme for Uncooled Micro-Bolometer Imagers","authors":"Dahe Liu, Xueyou Shi, Guangyi Chen, Wengao Lu, Zhongjian Chen","doi":"10.1109/EDSSC.2019.8754357","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754357","url":null,"abstract":"Joule heating effect of micro-bolometer sensors heats the elements rapidly during readout, and longtime heating might cause permanent damage of the detector. To solve this problem, we proposed a self-protection scheme based on an analog row select length of time detection circuitry. The protection circuit is effective for various sequential errors and improves the robustness of the whole detector. By implementing a cascaded OR-gate logic with trimmed edge delay, the row-level selection circuit layout is more regular with reduced area. To verify the proposed scheme, a 640$times$512 array format uncooled infrared detector with 17$mu$m pixel pitch is designed and fabricated in 0.18$mu$m CMOS process. Power consumption of the circuits is below 50$mu$W and the measured protection threshold of row period is around 360$mu$s.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125177287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 160×120 ROIC with Non-uniformity Calibration for Silicon Diode Uncooled IRFPA 一种具有非均匀性校正的160×120 ROIC用于硅二极管非冷却IRFPA
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754184
Yajun Zhu, Yuze Niu, Wengao Lu, Zhaofeng Huang, Yacong Zhang, Zhongjian Chen
{"title":"A 160×120 ROIC with Non-uniformity Calibration for Silicon Diode Uncooled IRFPA","authors":"Yajun Zhu, Yuze Niu, Wengao Lu, Zhaofeng Huang, Yacong Zhang, Zhongjian Chen","doi":"10.1109/EDSSC.2019.8754184","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754184","url":null,"abstract":"This paper presents a ROIC (Readout Integrated Circuit) with NUC (Non-uniformity Calibration), which is applied in a silicon diode uncooled IRFPA (Infrared Focal Plane Array). We propose blind pixel to calibrate chip temperature non-uniformity and DAC-based calibration for calibrating process non-uniformity. The ROIC is fabricated using a $0.35mu mathrm{m}$ CMOS process with array size of $160times 120$. Power consumption of the ROIC is 41mW, noise of the DAC is less than 2$mu$V, and the circuit’s SNR (Signal-to-Noise Ratio) is 72dB.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125241341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improved electrochromic performance of polyaniline film based on well-ordered 3D micro array 基于有序三维微阵列改进聚苯胺薄膜电致变色性能
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754133
F. Yue, Y. Ma, J. Liu, W. Xu, F. Li, F. Zhang, J. Shi, X.D. Huang
{"title":"Improved electrochromic performance of polyaniline film based on well-ordered 3D micro array","authors":"F. Yue, Y. Ma, J. Liu, W. Xu, F. Li, F. Zhang, J. Shi, X.D. Huang","doi":"10.1109/EDSSC.2019.8754133","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754133","url":null,"abstract":"Polyaniline (PANI) with a well-ordered 3D micro array is prepared by using MEMS processes and its electrochromic properties are investigated by comparison with a 2D planar one. The 3D sample has similar response speeds to the 2D one but displays (~1.2×) higher specific capacitance than the latter due to its more PANI content under the same footprint. The 3D micro array is also helpful to enhance the mechanical strength of the PANI film against repeated electrochemical cycling. Moreover, because the 3D array is well-ordered and also its feature size (~4 μm) is comparable to the infrared wavelength, strong interaction occurs between the infrared light and the structure; consequently, the 3D sample shows much larger emissivity modulation (~0.3) than the 2D one (~0.1).","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125895813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric 以Hf1-xTixO为栅极介质改善MoS2晶体管的电学性能
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/edssc.2019.8754077
Xinyuan Zhao, Jiqu Xu, Lin Liu, P. T. Lai, W. Tang
{"title":"Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric","authors":"Xinyuan Zhao, Jiqu Xu, Lin Liu, P. T. Lai, W. Tang","doi":"10.1109/edssc.2019.8754077","DOIUrl":"https://doi.org/10.1109/edssc.2019.8754077","url":null,"abstract":"Carrier mobility of MoS2 transistor can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, different TiO2 amounts are incorporated into HfO2 to form Hf1-xTixO gate dielectrics to investigate its effects on the electrical properties of MoS2 transistor. It is found that enhanced carrier mobility and decreased gate leakage current can be achieved by optimizing the Ti content, i.e. with ${rm{Hf}}_{0.9}{rm{Ti}}_{0.1}O (x = 0.1)$ as the gate dielectric, the device exhibits the highest carrier mobility of 31.5 ${rm{cm}}^{2}/Vs$, which is $ 1.3times$ improvement as compared to the sample with HfO2 as gate dielectric $(24.1 {rm{cm}}^{2}/Vs)$. The main mechanism lies in that Hf1-xTixO has higher k value than HfO2 to increase the Coulomb screening effect and thus carrier mobility. However, with further increase of Ti content, e.g. ${rm{Hf}}_{0.85}{rm{Ti}}_{0.15}O (x= 0.15)$, the device exhibits larger off current and degraded subthreshold swing. This is probably attributed to Ti-related oxide traps, a decreased conduction-band offset between ${rm{Hf}}_{0.85}{rm{Ti}}_{0.15}{rm{O}}$ and MoS2, and degraded $MoS_{2}/{rm{Hf}}_{1-x}{rm{Ti}}_{x}{rm{O}}$ interface quality.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125953241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
5G Wireless Receiver Front-End for 3.3-3.8GHz Frequency Band 3.3-3.8GHz频段5G无线接收机前端
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754123
Zhe-Yang Huang, Yen-Chun Wang
{"title":"5G Wireless Receiver Front-End for 3.3-3.8GHz Frequency Band","authors":"Zhe-Yang Huang, Yen-Chun Wang","doi":"10.1109/EDSSC.2019.8754123","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754123","url":null,"abstract":"This paper presents a 5G wireless receiver frontend for 3.3GHz – 3.8GHz licensed band application. The frontend designed in 0.35um BiCMOS process. Simulation results show the low-noise amplifier’s power gain is 23.1dB, noise figure is 2.5dB and input return loss is lower than -20.7dB. The conversion gain of the mixer is 13.2dB, max LO input power is -3dBm and the 3rd-order input intercept point is -8dBm. The tuning range of the voltage-controlled oscillator is from 3.48GHz-3.72GHz; and phase noise is all below -109.4dBc/Hz. Total power consumption of this 5G front-end is 54.9mW including all buffers.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130138019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monolithically Integrated E/D InAlN/GaN HEMT And Inverters On Sapphire Substrate 蓝宝石衬底上单片集成E/D InAlN/GaN HEMT和逆变器
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-01 DOI: 10.1109/EDSSC.2019.8754039
G. Gu, S. Dun, Hongyu Guo, Y. Lv, Zhirong Zhang, Zhihong Feng
{"title":"Monolithically Integrated E/D InAlN/GaN HEMT And Inverters On Sapphire Substrate","authors":"G. Gu, S. Dun, Hongyu Guo, Y. Lv, Zhirong Zhang, Zhihong Feng","doi":"10.1109/EDSSC.2019.8754039","DOIUrl":"https://doi.org/10.1109/EDSSC.2019.8754039","url":null,"abstract":"We have fabricated and characterized direct-coupled field-effect transistor (FET) logic (DCFL) Inverters based on monolithically integrated enhancement/depletion-mode (E/D-mode) InAlN/GaN high electron mobility transistors (HEMTs). The Enhancement-mode InAlN/GaN HEMT was realized by utilizing low damage BCl3-based plasma gate-recess etching, which exhibits a peak transconductance (Gm) of 435mS/mm with a threshold voltage of 0.74V. When the supply voltage (VDD) is biased at 2.5V, the E/D InAlN/GaN HEMTs inverter exhibits an output logic swing of 2.19V, a logic-low noise margin of 0.54V and a logichigh noise margin of 1.38V.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129245852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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