2012 14th International Conference on Electronic Materials and Packaging (EMAP)最新文献

筛选
英文 中文
LED wafer level packaging with a remote phosphor cap 带远端荧光粉帽的LED晶圆级封装
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507885
Huihua Liu, Rong Zhang, J. Lo, S. Lee
{"title":"LED wafer level packaging with a remote phosphor cap","authors":"Huihua Liu, Rong Zhang, J. Lo, S. Lee","doi":"10.1109/EMAP.2012.6507885","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507885","url":null,"abstract":"Phosphor converted LEDs (pc-LEDs), which employ yellow phosphor deposited on blue LEDs to generate white light illumination have been widely used in solid-state lighting (SSL). Currently most LEDs are packaged on an individual component basis. Such a conventional packaging process typically may have a relatively low throughput and poor uniformity. In this paper, a new structure for 3D wafer level LED packaging is introduced. The package consists of three parts: a silicon submount wafer with pre-mounted LEDs, a silicon cap wafer, and a layer of phosphor film. Each part was independently fabricated and subsequently assembled at the wafer level. The optical performance of singulated prototypes was characterized using an integrating sphere. Comparison and discussion of samples with various phosphor-silicone mixing ratios are given in detail.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126959594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Micro-texture and physical properties of the cold-sprayed copper deposit 冷喷涂铜镀层的显微组织和物理性能
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507870
Y. Watanabe, Y. Ichikawa, I. Nonaka, H. Miura
{"title":"Micro-texture and physical properties of the cold-sprayed copper deposit","authors":"Y. Watanabe, Y. Ichikawa, I. Nonaka, H. Miura","doi":"10.1109/EMAP.2012.6507870","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507870","url":null,"abstract":"The cold spray (CS) method is a new deposition technique. In this technique, small solid particles impact and deposit on a substrate without melting. The deposition rate of the CS method is much higher than that of the other deposition processes. Expected applications of this technology are not only coating film production but also direct copper wiring technique for electronic products. This method also can be applied to patterning of thin films without photomasks. For example, an arbitrary geometry thin-film pattern can be formed on a substrate by scanning a spray nozzle. However, mechanical properties of the CS deposit and its micro-texture are found to be quite different from those of bulk copper. The previous researches showed that the CS deposit has high strength and indicates brittle-like fracture. The cold-sprayed copper deposit has a micro-texture which is stacked heavily deformed particles. The difference of the micro-texture between the cold-sprayed copper deposit and bulk copper is the main reason of the different mechanical properties. Thus, there is a possibility that the electrical properties of the cold-sprayed copper deposit are also different from bulk copper. In this study, both micro-texture and the electrical properties of the cold-sprayed copper deposit were measured by using SEM and EBSD technique and a four-point probe method. From the EBSD evaluation results, it was found that the average grain size in the deposited particles was much smaller than that of feed stock powder and bulk copper. The electrical resistivity of cold-sprayed copper deposit was much higher than that of bulk copper. The fine grain texture of the cold-sprayed copper deposit is one of the reasons for this high electrical resistivity.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122711612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Packaging of SiC-SBD for high temperature operation 用于高温操作的SiC-SBD封装
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507921
Z. Valdez-Nava, M. Kozako, S. Dinculescu, I. Omura, M. Hikita, T. Lebey
{"title":"Packaging of SiC-SBD for high temperature operation","authors":"Z. Valdez-Nava, M. Kozako, S. Dinculescu, I. Omura, M. Hikita, T. Lebey","doi":"10.1109/EMAP.2012.6507921","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507921","url":null,"abstract":"Using wideband gap semiconductors (SiC, GaN) appears as possible solution to the growing demand for the development of high temperature, high frequencies power electronics. This will help downsizing the current Power Electronics systems and extend their range of operation conditions. The aim of this paper is to present the results obtained concerning the packaging of a full-wave rectifying bridge using SiC Schottky Barrier Diodes, capable to operate above 300°C. The diodes are rated 1200 V and 50 A. The proposed packaging is based on an insulating-gas encapsulation and stacking of the components. The rectifying function was tested by feeding a current trough the bridge at room temperature, and while applying high voltage in an insulating gas-filled heated chamber. Results show that the type of interconnection proposed can withstand at least 10 A and 200 V in rectifying conditions. Gas encapsulation allowed for an operation of the diodes under high voltage conditions up to 350°C even if at this temperature diode leakage current is too high to perform an appropriate rectification.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114271932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electrochemical deposition of Galfenol Galfenol的电化学沉积
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507838
R. Kay, J. Ng, C. Popov, P. Record, M. Desmulliez
{"title":"Electrochemical deposition of Galfenol","authors":"R. Kay, J. Ng, C. Popov, P. Record, M. Desmulliez","doi":"10.1109/EMAP.2012.6507838","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507838","url":null,"abstract":"This paper presents the results of the electrochemical deposition of Galfenol, an iron-gallium alloy, obtained from a Hull cell apparatus. In a Hull cell, the cathode is set at a pre-determined angle with respect to the anode electrode, which enables a wide range of current densities to be evaluated across a single sample. Copper clad substrates were electroplated using an aqueous based solution containing iron sulphate and gallium sulphate containing an insoluble platinum anode. Sodium citrate was used as a complexing agent to inhibit the formation of Fe(OH)3 within the plated film. Energy Dispersive X-Ray spectroscopy was carried out to determine the Fe and Ga percentages within the deposits. A proportion of 20% Ga and 80% Fe has been shown to give the maximum magnetostrictive response for Galfenol and this material percentage was achieved in this study. Current density and bath formulation were found to play a crucial role in deposit composition. High current areas yielded higher levels of Gallium within the deposits. X-ray Diffraction measurements determined that the deposited crystalline structure of the deposit contains BCC Fe phases within the 20% Ga composition plated film. However these results contradict the published phase diagrams and resultant Energy Dispersive X-Ray Spectroscopy results.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117101509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Controlling fusion zone shape and peak temperature produced by laser or electron beam 控制激光或电子束产生的熔合区形状和峰值温度
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507835
P. Wei
{"title":"Controlling fusion zone shape and peak temperature produced by laser or electron beam","authors":"P. Wei","doi":"10.1109/EMAP.2012.6507835","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507835","url":null,"abstract":"The fusion zone shape and peak temperature in melting or welding encountered in packaging and manufacturing technologies can be generally correlated as a function of four independent working parameters. They are dimensionless beam power, Marangoni, Prandtl and modified Peclet numbers. Dimensionless beam power includes the beam power and beam radius, Marangoni number represents the driving force, namely, surface-tension gradient coefficient and viscosity, Prandtl number stands for the ratio between momentum and thermal diffusivities, and the modified Peclet number includes scanning speed, specific heat, solid-to-liquid thermal conductivity ratio, difference in melting and ambient temperatures and latent heat. Determination of the fusion zone shape and peak temperature is crucial due to its close relationship with the strength and properties of the packaging and manufacturing products. The correlated results agree with numerical data, and available experimental data. This unified work can thus be successfully used to control the fusion zone shape and peak temperature prior to welding and melting.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129751870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of pick & place yield in carrier tape packaging system through materials selection and cavity structure optimization 通过材料的选择和腔体结构的优化,提高载带包装系统的取放成品率
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507836
Chenxiao Qiao, Yuning Shi, Nelson G. Vicera, Matthew Poon, Weiqiang Li, Haibin Chen, Jingshen Wu
{"title":"Improvement of pick & place yield in carrier tape packaging system through materials selection and cavity structure optimization","authors":"Chenxiao Qiao, Yuning Shi, Nelson G. Vicera, Matthew Poon, Weiqiang Li, Haibin Chen, Jingshen Wu","doi":"10.1109/EMAP.2012.6507836","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507836","url":null,"abstract":"Pick & place yield performance is among of the most important parameters for electronic components assembly, especially for today's miniaturized packages. For very small devices such as small outline transistor (SOT) with carrier tape packaging system, sticking of device on cover tape was often observed, which is believed to be caused by accumulated electrostatic charge on the surfaces of device and cover tape. To improve pick & place yield performance, electrostatic charges and electrostatic forces should be minimized. In this work, pick and place tests were performed for SOT devices packaged in different packaging systems using different materials and cavity structures. The results show that the pick & place yield can be significantly improved by the right material selection and cavity structure optimization. The relationships among material property, cavity structure, electrostatic charge, electrostatic force, pick & place yield were correlated, based on experimental tests and finite elemental simulation. This work would provide test and simulation methodologies and guidelines for materials selection and cavity structure design for carrier tape packaging systems.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128409752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Current stressing effects on interfacial reaction characteristics of fine-pitch microbump 电流应力对细间距微凸点界面反应特性的影响
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507855
Jong-Myeong Park, Jong-Jin Park, Sung-Hyuk Kim, Young-Bae Park
{"title":"Current stressing effects on interfacial reaction characteristics of fine-pitch microbump","authors":"Jong-Myeong Park, Jong-Jin Park, Sung-Hyuk Kim, Young-Bae Park","doi":"10.1109/EMAP.2012.6507855","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507855","url":null,"abstract":"The electrical reliability of Cu/Sn-3.5Ag microbumps under current stressing conditions were systematically evaluated. Intermetallic compound (IMC) growth was controlled by a diffusion-dominant mechanism and a chemical reaction-dominant mechanism with annealing and current-stressing time, respectively. Under current stressing condition, Intermetallic compound growth was significantly enhanced by current stressing where the growth rate follows a linear relationship with stressing time. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. Kirkendall voids, which would be detrimental to the reliability of Cu pillar bump, was observed at both Cu pillar/Cu3Sn and Cu3Sn/Cu under bump metallization interfaces.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129681021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrasonic inspection of package internal defects considering multiple interface effects 考虑多界面效应的包装内部缺陷超声检测
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507881
Minshu Zhang, C. C. Lo, S. Lee
{"title":"Ultrasonic inspection of package internal defects considering multiple interface effects","authors":"Minshu Zhang, C. C. Lo, S. Lee","doi":"10.1109/EMAP.2012.6507881","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507881","url":null,"abstract":"Scanning acoustic microscopy (SAM) is the most commonly used method to inspect internal defects of electronic packages. However, in practice, the multiple interface effect will bring many difficulties for ultrasonic inspection. Thus, understanding the physics is the key to indicate defects correctly. In this paper, quad flat no-lead (QFN) package is chosen as the test vehicle. The SAM working principle and pulse analysis are introduced with details. For comparison, the QFN package is also scanned by Sonix SAM after three times reflow with MSL-1 preconditioning. From the scanning results, it is found that the multiple interface effect can be avoided completely using the combination method with C-scan and T-scan modes.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123983294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal performance and placement design of LED array package on PCB LED阵列封装在PCB上的散热性能及布局设计
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507915
K. Yung, H. Liem, H. Choy
{"title":"Thermal performance and placement design of LED array package on PCB","authors":"K. Yung, H. Liem, H. Choy","doi":"10.1109/EMAP.2012.6507915","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507915","url":null,"abstract":"This paper reports the thermal performance of a high-brightness light-emitting diode (LED) array package with a novel placement method on a metal core printed circuit board (MCPCB). The precise heat transfer analysis and modeling using computational fluid dynamics (CFD) were performed according to the practical working conditions of the LED array. The surface temperatures of the LEDs having the developed placement method were monitored and compared with that of LEDs using a conventional placement method. Emphasis was placed upon investigating how the radiant flux, efficacy, and uniformity of illuminance changed in accordance with the method. Thermal distribution of a commercial LED product having 36 high-brightness LEDs using the developed placement method is compared to that of the LED product having the original design. Results suggested that the new placement method could lower the individual LED surface temperature by rearranging the thermal distribution of the LED array. As a result, the overall heat dissipating capability of the LED array to the PCB and hence LED efficacy was improved.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133435836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Process considerations of TC-NCP fine-pitch copper pillar FC bonding TC-NCP细间距铜柱FC键合的工艺考虑
2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI: 10.1109/EMAP.2012.6507900
Y. Cheung, Ka San Lam, G. Mak, Dewen Tian, Ming Li
{"title":"Process considerations of TC-NCP fine-pitch copper pillar FC bonding","authors":"Y. Cheung, Ka San Lam, G. Mak, Dewen Tian, Ming Li","doi":"10.1109/EMAP.2012.6507900","DOIUrl":"https://doi.org/10.1109/EMAP.2012.6507900","url":null,"abstract":"In the presence of pre-applied NCP (non conductive paste) as underfill for thermo-compression (TC) bonding of fine-pitch copper pillar flip-chip (FC), careful optimization of the process parameters is needed to ensure reasonable bonding yield. Otherwise, many NCP-related failures such as NCP voiding, filler entrapment at soldering interfaces, no solder wetting on bond pads and etc., will affect the quality of the TC bonding. Satisfactory results can be obtained by operating in a narrow process window. We have investigated the effects of some major parameters and their process considerations for improving bond quality of TC-NCP bonding. These include the studies on: (i) NCP dispensing, (ii) bond tool setting such as its descending speed and initial temperature (iii) the applied compressive force profile for deforming the solder and enlarging its area for bonding, (iv) the bonding temperature profile that defines the heating and cooling rate, the peak bonding temperature, the curing temperature, the time for solder wetting and NCP curing. Proper setting for force and temperature profiles can promote solder wetting and minimize NCP voiding and filler entrapment. Other considerations affecting the solder joint integrity are: the planarization of the bond tool with respect to the bonding substrate, the bond pad design and its metallization as well as the selection of appropriate NCP with the consideration of solder wettability on the given metallization.","PeriodicalId":182576,"journal":{"name":"2012 14th International Conference on Electronic Materials and Packaging (EMAP)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126183561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信