电流应力对细间距微凸点界面反应特性的影响

2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI:10.1109/EMAP.2012.6507855

Jong-Myeong Park, Jong-Jin Park, Sung-Hyuk Kim, Young-Bae Park

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引用次数: 0

摘要

系统评价了Cu/Sn-3.5Ag微凸块在电流应力条件下的电气可靠性。金属间化合物(IMC)的生长受扩散主导机制和化学反应主导机制的控制，分别受退火和电流应力时间的影响。在当前应力条件下，金属间化合物的生长受当前应力的显著促进，且生长速率与应力时间呈线性关系。电迁移条件下Sn相的完全消耗时间比退火条件下要快。在凹凸金属化界面下，Cu柱/Cu3Sn和Cu3Sn/Cu均存在不利于凹凸金属化可靠性的Kirkendall空洞。

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Current stressing effects on interfacial reaction characteristics of fine-pitch microbump

The electrical reliability of Cu/Sn-3.5Ag microbumps under current stressing conditions were systematically evaluated. Intermetallic compound (IMC) growth was controlled by a diffusion-dominant mechanism and a chemical reaction-dominant mechanism with annealing and current-stressing time, respectively. Under current stressing condition, Intermetallic compound growth was significantly enhanced by current stressing where the growth rate follows a linear relationship with stressing time. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. Kirkendall voids, which would be detrimental to the reliability of Cu pillar bump, was observed at both Cu pillar/Cu3Sn and Cu3Sn/Cu under bump metallization interfaces.

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来源期刊

2012 14th International Conference on Electronic Materials and Packaging (EMAP)

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