Materials Today Physics最新文献

{"title":"The Critical Role of Materials and Device Geometry on Performance of RRAM and Memristor: Review","authors":"Mohammad Tauquir A.S. Shaikh, Chowdam Venkata Prasad, Kyong Jae Kim, You Seung Rim","doi":"10.1016/j.mtphys.2025.101715","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101715","url":null,"abstract":"In the rapidly evolving field of memory technology, material strategies have been continuously optimized to achieve high-performance memory devices, many of which have successfully transitioned to industrial applications. A critical focus has been placed on selecting and refining materials that are environmentally sustainable and amenable to facile processing methods. While resistive random-access memory (RRAM) materials, mechanisms, and applications have been comprehensively reviewed, studies focusing on strategic approaches to material optimization remain limited. This review delves into the burgeoning domain of polymer/organic memory and memristors, with particular attention to electrode and switching layer (SL) material modifications. Key strategies include blending polymers, incorporating nanoparticles, quantum dots, or nanosheets into the SL, and fabricating bilayer or multilayer SLs within the metal-insulator-metal (MIM) structure. These materials and their configurations play pivotal roles in enabling various memory types (WORM, NVM, VM) and achieving low-voltage operation, critical for reducing energy consumption and improving device longevity. By interlinking phenomena and presenting unique features from literature, this review offers readers insights into innovative approaches to materials selection, device geometry, and modulation of biasing stimuli. It serves as a comprehensive guide towards understanding of materials strategies in organic RRAM devices for next-generation memory and memristor technologies.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"113 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable hetero-assembly of 2D NiFeCr-LDH and MnO2 nanosheets for high-energy quasi-solid-state ammonium-ion asymmetric supercapacitors","authors":"Navnath S. Padalkar ,&nbsp;Jayshri A. Shingade ,&nbsp;Jong Pil Park","doi":"10.1016/j.mtphys.2025.101711","DOIUrl":"10.1016/j.mtphys.2025.101711","url":null,"abstract":"<div><div>The development of high-performance quasi-solid-state ammonium-ion asymmetric supercapacitors (QSSAIAS) has recently attracted significant research interest. Nonmetallic ammonium ions, characterized by their high safety, low mass, and small hydrated radius, provide critical advantages for enhancing the performance of ammonium-ion supercapacitors. However, achieving high energy density QSSAIAS remains challenging because of the limited availability of high-capacitance pseudocapacitive cathodes. In this study, we report a high-performance 2D-2D self-assembled layered NiFeCr-LDH-MnO₂ (NFCMn) nanohybrid with pseudocapacitive properties synthesized through an exfoliation-restacking route. The NFCMn nanohybrid achieves a maximum specific capacity of 912 C g⁻¹, a result attributed to its abundant active sites, mesoporous structure, large interlayer gallery, and pronounced synergistic effect of its multi-component layered structure. A full-cell QSSAIAS, assembled using NFCMn nanohybrids as the cathode and activated carbon as the anode, delivers an energy density of 78 Wh kg⁻¹ along with excellent cyclic durability over 15,000 charge–discharge cycles. These findings demonstrate that the self-assembled 2D-2D NFCMn nanohybrid is not only highly effective in enhancing the ammonium-ion supercapacitor performance but also represents a significant step toward developing novel LDH-metal oxide-based hybrid materials with intimate coupling and superior functional properties.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101711"},"PeriodicalIF":10.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143677744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Searching for topological carbon allotropes and the possible nontrivial quasi-particle states in them","authors":"Qing-Bo Liu ,&nbsp;Lun Xiong ,&nbsp;Ziyang Yu ,&nbsp;Hua-Hua Fu","doi":"10.1016/j.mtphys.2025.101700","DOIUrl":"10.1016/j.mtphys.2025.101700","url":null,"abstract":"<div><div>Carbon, as one of the most abundant elements on earth, possesses numerous allotropes that display a diverse range of physical properties. In this study, we utilized ab initio calculations and symmetry analyses to investigate 703 carbon allotropes, leading to the discovery of 315 (32) topological phononic (electronic) materials with ideal nontrivial characteristics. The topological phonons encompass single, charge-two, three, and four Weyl phonons, as well as Dirac (Weyl) node-lines phonons. Topological electronic states include topological insulators, Dirac points (Type-II), triple nodal points, and more. To verify this significant discovery, we adopt several real carbon allotropes with <span><math><mrow><mi>u</mi><mi>n</mi><mi>i</mi></mrow></math></span> (<span><math><mrow><mi>p</mi><mi>b</mi><mi>g</mi></mrow></math></span>) structure within space group (SG) No 178 (230) to showcase their topological characteristics. The <span><math><mrow><mi>u</mi><mi>n</mi><mi>i</mi></mrow></math></span> structure exhibits a combination of single-pair Weyl phonons and one-nodal surface phonons, resulting in a single surface arc in the (100) surface Brillouin zone (BZ) and isolated double-helix surface states in the (110) surface BZ. In the topological semimetal <span><math><mrow><mi>p</mi><mi>b</mi><mi>g</mi></mrow></math></span>, perfect triple degenerate nodal points near the Fermi level are found, resulting in distinct surface states in the (001) and (110) surfaces BZ. This research not only significantly broadens our understanding of topological quasi-particle states in carbon allotropes, but also offer a valuable material platform for further exploration of topological electrons and phonons in light element materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101700"},"PeriodicalIF":10.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143677840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure-modulated conductive filaments in Ruddlesden-Popper perovskite-based memristors and their application in artificial synapses","authors":"Fu-Chiao Wu ,&nbsp;Zi-Ming Su ,&nbsp;Yu-Chieh Hsu ,&nbsp;Wei-Yang Chou ,&nbsp;Wei-Chih Lai ,&nbsp;Chin-Chun Tsai ,&nbsp;Horng-Long Cheng","doi":"10.1016/j.mtphys.2025.101708","DOIUrl":"10.1016/j.mtphys.2025.101708","url":null,"abstract":"<div><div>Low-dimensional, lead-free perovskite-based electronic/optoelectronic devices exhibit the advantages of stability and nontoxicity. However, their electrical performance is often lower than that of their three-dimensional, lead-based counterparts. Hence, understanding the correlations between microstructural features and electrical characteristics of low-dimensional, lead-free perovskite-based devices is essential for enhancing device performance. In this study, a two-dimensional Ruddlesden-Popper type perovskite, phenylethylammonium tin iodide (PEA₂SnI₄), was selected as the active material. Various PEAI:SnI₂ blending ratios and molar concentrations were adopted to fabricate PEA₂SnI₄-based memristors. The absorption spectra of PEA₂SnI₄ thin films from diverse process conditions show significant differences, which are rarely discussed in the literature. With the aid of theoretical calculations, we found that the variations in absorption spectra reflect that the PEA₂SnI₄ specimens with low PEAI loading have short crystallite size perpendicular to the substrate and deficiency of organic components in lattice structures, slowing the formation and disruption of silver (Ag) conductive filaments (CFs) of devices. The PEA₂SnI₄ specimens from high molar concentration possess long and short crystallite sizes perpendicular and parallel to the substrate, respectively, leading to efficient formation and disruption of Ag CFs and a large resistive switching window of devices, but weakening the interaction between adjacent PEA₂SnI₄ layers, causing decreased operational stability of devices. Cross-sectional scanning transmission electron microscopy combined with energy-dispersive X-ray spectroscopy was employed to confirm Ag CF formation. As synaptic devices, these PEA₂SnI₄-based memristors can perform spike-time- and spike-number-dependent plasticity, microstructure-dependent synaptic characteristics, and opposite synaptic behaviors at high and low resistance states. By engineering microstructural features, low-dimensional, lead-free perovskite-based memristors with improved electrical performance or a variety of synaptic behaviors can be achieved.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101708"},"PeriodicalIF":10.0,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-dimensional reconfigurable electronic and optoelectronic devices: From modulation to applications","authors":"Qiman Zhang ,&nbsp;Ziheng Zhao ,&nbsp;Li Tao","doi":"10.1016/j.mtphys.2025.101710","DOIUrl":"10.1016/j.mtphys.2025.101710","url":null,"abstract":"<div><div>In the post-Moore era, silicon-based electronic devices have reached their physical limits, impeding significant performance enhancements through further miniaturization of transistor size. Two-dimensional (2D) materials have demonstrated considerable potential for application in electronic devices due to their superior optoelectronic properties, providing new ideas and methods to solve this problem. Herein, a comprehensive review will focus on the unique reconfigurable phenomena presented in 2D electronic and optoelectronic devices including gate-tunable rectifying behaviors, dynamic polarity modulation, and reconfigurable photoresponse, and further discusses the innovative applications of these devices such as reconfigurable optoelectronic logic gates, security circuits, and image processing, aiming to provide guidance for future research in this field and to promote the further innovative development of 2D reconfigurable optoelectronic devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101710"},"PeriodicalIF":10.0,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anti-drying, anti-freezing and super-elastic MXene/gelatin hydrogels for electromagnetic shielding and pressure sensing","authors":"Xu Zhou ,&nbsp;Xiao-Ai Ye ,&nbsp;Jia-Qi Zhu ,&nbsp;Gui-Gen Wang","doi":"10.1016/j.mtphys.2025.101709","DOIUrl":"10.1016/j.mtphys.2025.101709","url":null,"abstract":"<div><div>Conductive hydrogels with water-enriched pores have shown great potential in electromagnetic wave protection and flexible wearable electronics. However, hydrogel with high water content often results in some challenges such as water loss and low-temperature freezing. In this study, porous gelatin/ChCl/MXene Ti₃C₂T_x (GCM) hydrogels were prepared via a facile one-pot method. The introduction of ChCl forms abundant hydrogen bonds in GCM hydrogels, which endows the hydrogels long-term anti-drying (30 days) and anti-freezing abilities (−30 °C). Due to the synergistic effects of the porous structure, highly conductive MXene and water molecules, the electromagnetic interference (EMI) shielding effectiveness (SE) reach up to 108 dB in the X-band. Significantly, the effect of water molecules on EMI SE is quantified by adjusting the water content in hydrogel. Moreover, the gelatin-based hydrogel exhibits super-elasticity (0.25 MPa at 80 % strain) and demonstrates no significant decrease in EMI SE after 500 compression cycles. Finally, the excellent pressure-sensing properties of GCM hydrogel enable sensitive and reliable detection in human motion and smart coding. Therefore, the developed GCM hydrogel demonstrates promising application prospects in the fields of EMI shielding and sensing for wearable electronic devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101709"},"PeriodicalIF":10.0,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced thermoelectric cooling performance of (Bi, Sb)2Te3 through platinum doping","authors":"Jiayue Du ,&nbsp;Yuxin Sun ,&nbsp;Fengkai Guo,&nbsp;Haoyang Tong,&nbsp;Zhiyuan Yu,&nbsp;Zihang Liu,&nbsp;Jianbo Zhu,&nbsp;Jiehe Sui","doi":"10.1016/j.mtphys.2025.101705","DOIUrl":"10.1016/j.mtphys.2025.101705","url":null,"abstract":"<div><div>The requirements for solid-state cooling are growing, especially under extreme conditions. Bi₂Te₃-based alloys stand as the sole thermoelectric (TE) materials currently available for large-scale commercial use, and it is of great significance to further improve their TE properties. In this study, Pt is doped into p-type Bi_0.4Sb_1.6Te₃ to optimize its TE transport performance. The doping of Pt results in a dramatic rise in carrier concentration and power factor. Simultaneously, the existence of the second phases PtSb along with nanopores, contribute to an obvious reduction in lattice thermal conductivity. Hence, the <em>ZT</em> value is boosted to 1.43 at 348 K, and the average <em>ZT</em> from 300 K to 450 K is as high as 1.32. The 7-pair TE cooling module is fabricated based on this material, which exhibits a maximum cooling temperature difference of 92.2 K, and a maximum cooling capacity of 2.9 W when the hot-side temperature is 350 K. This outstanding progress will facilitate the further development of Bi₂Te₃ cooling modules.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101705"},"PeriodicalIF":10.0,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Large electron-phonon drag asymmetry and reverse heat flow in the topological semimetal θ-TaN","authors":"Chunhua Li,&nbsp;David Broido","doi":"10.1016/j.mtphys.2025.101706","DOIUrl":"10.1016/j.mtphys.2025.101706","url":null,"abstract":"<div><div>A broad range of unusual transport behaviors have been discovered in topological semimetals. However, to date, the effect on the thermopower from intrinsic momentum exchange between electrons and phonons has received little attention. Here we report that huge electron-phonon drag enhancements of the thermopower of the topological semimetal, <span><math><mrow><mi>θ</mi></mrow></math></span>-phase tantalum nitride (<span><math><mrow><mi>θ</mi></mrow></math></span>-TaN), can occur that persist even up to room temperature. Our first principles calculations also identify a surprising asymmetry in which the large drag-enhanced thermopowers found slightly above the material's chemical potential disappear just below it. The large thermopower enhancements result from anomalous drag contributions from high frequency acoustic phonons with unusually small decay rates. The apparent vanishing drag results from (i) the emergence of an exceptionally high electrical conductivity promoted by the steep linear electronic dispersions extending below one of the topological nodal points; (ii) a remarkable cancellation in which momentum transferred from a charge current creates oppositely directed phonon heat currents of nearly equal magnitude, thereby masking the drag contributions. This extraordinary transport behavior is a consequence of an unusual interplay between intrinsic electron and phonon material properties in <span><math><mrow><mi>θ</mi></mrow></math></span>-TaN. Our work gives new insights into the fundamental physical properties of coupled electron-phonon systems and motivates further exploration of drag effects in semimetals.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101706"},"PeriodicalIF":10.0,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MoS2-based quantum dot artificial synapses for neuromorphic computing","authors":"Gongjie Liu,&nbsp;Haoqi Liu,&nbsp;Feifan Fan,&nbsp;Yuefeng Gu,&nbsp;Lisi Wei,&nbsp;Xiaolin Xiang,&nbsp;Yuhao Wang,&nbsp;Qiuhong Li","doi":"10.1016/j.mtphys.2025.101703","DOIUrl":"10.1016/j.mtphys.2025.101703","url":null,"abstract":"<div><div>The advancement of deep learning has escalated computational requirements. Neuromorphic devices, particularly those based on memristors, present strong potential to meet these demands. However, current memristors face challenges such as a low on/off ratio and poor linearity, which hinder the progress of neuromorphic computing. Here, we propose a MoS₂-based quantum dot memristor, where the presence of quantum dots facilitates the formation and stability of conductive channels. The device exhibits narrow set and reset voltage distributions, with an on/off ratio reaching 10⁵ and multiple resistive states. Based on these multi-state characteristics, we achieved parallel image processing with various operators. The excitatory postsynaptic current (EPSC), spike-timing-dependent plasticity (STDP), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD) characteristics of the device were tested, with the linearity of LTP and LTD being 0.21 and −0.25, respectively. Based on the good linearity of weight updates, we built an artificial neural network to recognize facial images with Gaussian, salt-and-pepper, and Poisson noise. At noise levels of 40 %, 48 %, and λ = 80, the recognition accuracy rates were still as high as 100 %, 100 %, and 97.33 %, respectively. This work provides a valuable reference for quantum dot-based neuromorphic computing.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101703"},"PeriodicalIF":10.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143640421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of plastic hot-rolling on thermoelectric properties in Ag2Se0.65S0.35 ductile materials","authors":"Shiqi Yang ,&nbsp;Jin Liu ,&nbsp;Xuefeng Zhao ,&nbsp;Pengfei Qiu ,&nbsp;Xun Shi","doi":"10.1016/j.mtphys.2025.101707","DOIUrl":"10.1016/j.mtphys.2025.101707","url":null,"abstract":"<div><div>Ag₂(S, Se) solid solutions near the morphotropic phase boundary (MPB) well integrate excellent room-temperature ductility and high thermoelectric (TE) performance together, showing the great potential for the usage in flexible thermoelectrics. However, their orthorhombic-monoclinic phase transition brings great difficulty to fabricate the Ag₂(S, Se)-based flexible films with high TE performance. In this work, taking the Ag₂Se_0.65S_0.35 which locates at the orthorhombic-monoclinic phase boundary as an example, we systematically investigate the evolutions of phase and electrical transport properties of Ag_2-<em>x</em>Se_0.65S_0.35 during the plastic hot-rolling and the following post-treatment processes. Significantly degraded power factor is observed with increasing the deformation degree, but it can be recovered back by post-treatment, i.e. firstly annealing at 353 K and then dipping in liquid nitrogen. Finally, high-performance flexible Ag₂Se_0.65S_0.35 film with a room-temperature power factor of 17.0 μWcm⁻¹K⁻² is successfully obtained, providing a promising candidate materials for the development of flexible TE device used in wearables.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101707"},"PeriodicalIF":10.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143640422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}