Materials Today Physics最新文献

{"title":"Multi-functional synaptic memristor for neuromorphic pattern recognition and image compression","authors":"Hao Sun,&nbsp;Siyuan Li,&nbsp;Xiaofei Dong,&nbsp;Fengxia Yang,&nbsp;Xiang Zhang,&nbsp;Jianbiao Chen,&nbsp;Xuqiang Zhang,&nbsp;Jiangtao Chen,&nbsp;Yun Zhao,&nbsp;Yan Li","doi":"10.1016/j.mtphys.2025.101684","DOIUrl":"10.1016/j.mtphys.2025.101684","url":null,"abstract":"<div><div>A two-terminal artificial synaptic memristor capable of emulating the discrimination ability in human brain is an essential prerequisite for realizing neuromorphic computing architectures through straightforward crossbar array, however, it is still a challenge yet. Here, a multi-functional synaptic memristor is reported, based on bismuth oxybromide (BiOBr) nanosheets, in which enables advanced pattern-discriminating and image compression synaptic functionality. The device exhibits stable resistance switching with an On/Off ratio of ∼30.4 and pronounced electrically-induced synaptic plasticity. The device array can achieve a classification recognition accuracy of 70.98 % on CIFAR-10 dataset, significantly outperforming the 36.35 % accuracy obtained using traditional gradient descent algorithms. By encoding image pixel values into temporal pulse sequences, the device can enable high-precision image compression, maintaining 94.01 % classification accuracy on MNIST dataset with greatly reduced trainable parameters (from 13550 to 2630) and shortened training time (from 252 to 65 s). These findings suggest BiOBr nanosheets could facilitate efficient memristor-based artificial intelligence applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101684"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143485646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"NEA GaAs photocathode for electron source: From growth, cleaning, activation to performance","authors":"Xiaohui Wang ,&nbsp;Minghong Shi ,&nbsp;Lipeng Su ,&nbsp;Lifeng Yang ,&nbsp;Xuxin Deng ,&nbsp;Yifan Zhang ,&nbsp;Haowen Tan","doi":"10.1016/j.mtphys.2025.101680","DOIUrl":"10.1016/j.mtphys.2025.101680","url":null,"abstract":"<div><div>Benefitting from excellent QE and high polarization, GaAs-based photocathode becomes the most promising candidate for electron source and has made rapid progress in the past 20 years. In this paper, growth, cleaning, and activation are reviewed in sequence, and effects of different parameters on QE and polarization are explored. The QE of GaAs-based photocathode is mainly distributed in the band range of 350–932 nm, and the maximum can reach 49.45 %. QE converges higher as cleaning temperature increases, illustrating that higher annealing temperature can considerably elevate the possibility of obtaining a high QE even if impurities can be eliminated at lower temperature. The optimal activation time for Cs/O activation ranges from 50 to 90 min, and the optimal Cs/O alternations ranges from 7 to 11 times. The operating wavelength of polarized photocathode is above 680 nm while polarization of most superlattice photocathodes can exceed 80 % with QE lower than 1 %. Moreover, an increase in QE leads to a significant decrease in polarization for one superlattice photocathode, indicating that high QE and high polarization cannot be simultaneously achieved. It is hoped that this review will draw more attention to GaAs-based photocathode and promote understanding and application of GaAs-based photocathode.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101680"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composite perovskite-type ZnSnO3 improves the figure of merit and module efficiency of Bi0.4Sb1.6Te3 thermoelectrics","authors":"Yongye Ding ,&nbsp;Lidong Chen ,&nbsp;Qiang Zhang ,&nbsp;Ruyuan Li ,&nbsp;Ruijie Li ,&nbsp;Lianghan Fan ,&nbsp;Xiaojian Tan ,&nbsp;Jiehua Wu ,&nbsp;Guo-Qiang Liu ,&nbsp;Jun Jiang","doi":"10.1016/j.mtphys.2025.101697","DOIUrl":"10.1016/j.mtphys.2025.101697","url":null,"abstract":"<div><div>Thermoelectric (TE) power generators provide an effective solution for recovering low-grade heat, driving the development of high-performance Bi₂Te₃ alloys. In this study, we enhanced the peak <em>ZT</em> to 1.43 at 350 K by incorporating perovskite-type ZnSnO₃ nanoparticles into Bi_0.4Sb_1.6Te₃, surpassing the performance of most (Bi,Sb)₂Te₃-based composites. The enhancement is attributed to the in-situ reaction between the decomposition products and the matrix, which optimizes hole concentration and enhances the density-of-states effective mass via the energy filtering effect, with minimal loss in hole mobility. Concurrently, microstructural evolution, including high-density twins and oxide nanoprecipitates, significantly reduces lattice thermal conductivity. These combined effects result in a 28 % improvement in the TE quality factor at 300 K, reaching 0.63 for the Bi_0.4Sb_1.6Te₃ + 0.4 wt% ZnSnO₃ sample. More significantly, when coupled with <em>n</em>-type zone-melted Bi₂Te_2.7Se_0.3, the well-designed 17-pair TE module achieves a conversion efficiency of 6.6 % under a 200 K temperature gradient, surpassing the majority of reported Bi₂Te₃-based modules, which further demonstrates the efficacy of the ZnSnO₃ compositing strategy and highlights the great potential for practical applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101697"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143569668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Weakening the polarity of chemical bonds to improve carrier mobility for realizing high thermoelectric performance in N-typed Mg3(Sb,Bi)2","authors":"Jisheng Liang ,&nbsp;Qi Zhou ,&nbsp;Zhengniu Pan ,&nbsp;Zhongwei Zhang ,&nbsp;Fengting Mao ,&nbsp;Shiyuan Zhao ,&nbsp;Sijing Zhu ,&nbsp;Jun-liang Chen ,&nbsp;Jie Gao ,&nbsp;Lei Miao","doi":"10.1016/j.mtphys.2025.101687","DOIUrl":"10.1016/j.mtphys.2025.101687","url":null,"abstract":"<div><div>N-type Mg₃(Sb,Bi)₂ Zintl compounds have emerged as promising candidates for high-temperature energy applications due to their exceptional thermoelectric performance, making them pivotal in the development of sustainable energy technologies. Despite recent advancements, these materials suffer from low carrier mobility caused by polar covalent bonds, which degrade electrical conductivity and overall thermoelectric efficiency. In this study, we introduce beryllium, a bivalent homologous group element, as a cationic dopant to substitute for Mg in Mg_3.2Sb_1.5Bi_0.49Te_0.01. This substitution weakens the polarity of the chemical bonds, significantly enhancing carrier mobility from ∼62 to ∼138 cm² V⁻¹ s⁻¹. Theoretical analysis using the single parabolic band model confirms that the effective mass decreases with increasing Be doping content. First-principles calculations further reveal that Be doping leads to stronger charge localization due to their higher electronegativity and shifts the Fermi level into the conduction band and narrows the band gap, strengthening the n-type semiconducting properties. This optimization yields an impressive power factor of ∼2022 μW m⁻¹ K⁻² at 523 K in Mg_3.12Be_0.08Sb_1.5Bi_0.49Te_0.01, owing to the improved carrier mobility. Furthermore, the Be atoms as point defects induces significant lattice distortions and strains, effectively suppressing lattice thermal conductivity to ∼0.38 W m⁻¹ K⁻¹ at 573 K. Consequently, we achieve a remarkable <em>ZT</em> of 1.54 at 673 K and a high average <em>ZT</em> of 1.17 in n-type Mg_3.14Be_0.06Sb_1.5Bi_0.49Te_0.01. Our work offers new strategies to enhance the thermoelectric properties of n-type Mg₃(Sb,Bi)₂ materials, advancing high-temperature sustainable energy technologies.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101687"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coexisting multi-valence states of doped Ta into β-Ga2O3 films on B-doped mono-diamond to achieve high performance heterojunction detector","authors":"Xinglong Han,&nbsp;Yongsheng Wang,&nbsp;Yanpeng Gong,&nbsp;Wenru Jia,&nbsp;Jianwei Wang,&nbsp;Xiaoqin Yang,&nbsp;Shengwang Yu","doi":"10.1016/j.mtphys.2025.101682","DOIUrl":"10.1016/j.mtphys.2025.101682","url":null,"abstract":"<div><div>Ga₂O₃, as an ultra-wide bandgap semiconductor, has promising applications, <em>e.g.</em> solar-blind ultraviolet detectors, but is hindered by issues related to thermal conductivity and the P-type doping method. This study prepared P-N heterojunction via Ta-doped <em>β</em>-Ga₂O₃ films on B-doped mono-diamonds. We found that the multi-valence states of doped Ta coexisted in <em>β</em>-Ga₂O₃ films, leading to a transmittance over 90 % caused by the formation of Ta₂O₅. Moreover, the dark current was four orders of magnitude higher than the intrinsic <em>β</em>-Ga₂O₃ film, which was attributed to the Ga³⁺ being replaced by Ta⁵⁺. The B-doped mono-diamond exhibited a high carrier concentration of 5.08 × 10¹⁸ cm⁻³ and a low resistivity of 5.92 × 10⁻³ Ω cm due to the C⁴⁺ being replaced by B³⁺. The Ta-doped <em>β</em>-Ga₂O₃/B-doped mono-diamond heterojunction detector exhibited excellent photoelectric properties with a high responsivity of 64 mA/W at +10 V bias voltage, providing a novel approach for solving the <em>β</em>-Ga₂O₃/diamond challenge to realize high-performance detectors.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101682"},"PeriodicalIF":10.0,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143463052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable, washable piezoresistive pressure sensor based on polyurethane sponge coated with composite CNT/CB/TPU","authors":"Yan Wang ,&nbsp;Wenbo Luo ,&nbsp;Yading Wen ,&nbsp;Jiafeng Zhao ,&nbsp;Chang Chen ,&nbsp;Zhuo Chen ,&nbsp;Xiao-Sheng Zhang","doi":"10.1016/j.mtphys.2025.101681","DOIUrl":"10.1016/j.mtphys.2025.101681","url":null,"abstract":"<div><div>Flexible pressure sensors are widely used in human health detection and human-machine interface interaction. In this paper, a 3D porous flexible pressure sensor based on carbon nanotubes (CNT)/carbon black (CB)/thermoplastic polyurethane (TPU)/polyurethane (PU) sponge is studied. This sensor exhibits good sensitivity, stability and washability. The sensing layer utilizes a conductive network formed by the synergistic effect of CNT and CB, providing excellent performance for the sensor. TPU functions as an adhesive, ensuring the bonding of the conductive material and providing washability to the sensor. Additionally, CB particles enhance the sensitivity of the sensor at low pressure range. The sensor demonstrates a response time of 119 ms, a recovery time of 59 ms, and maintains non-attenuating durability for more than 1000 cycles. This multi-functional pressure sensor can provide a new platform for the designing and developing wearable health monitoring devices, as well as an efficient human-machine interface.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101681"},"PeriodicalIF":10.0,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143463084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Abnormal thermal conductivity increase in β-Ga2O3 by an unconventional bonding mechanism using machine-learning potential","authors":"Wu-Xing Zhou ,&nbsp;Cheng-Wei Wu ,&nbsp;Hao-Ran Cao ,&nbsp;Yu-Jia Zeng ,&nbsp;Guofeng Xie ,&nbsp;Gang Zhang","doi":"10.1016/j.mtphys.2025.101677","DOIUrl":"10.1016/j.mtphys.2025.101677","url":null,"abstract":"<div><div><em>β-</em>Ga₂O₃, with its ultrawide band gap (∼4.9 eV) and high critical electric field, holds potential in power electronics but is limited by low thermal conductivity, which is critical to the performance and reliability because the high level of heat flux density induced by the extremely high levels of power density. Combining first-principles calculations, machine-learning potentials, and solving the phonon Boltzmann transport equation, we found that substituting octahedral-coordinated Ga with Al significantly enhances thermal conductivity from 100K to 800K. At room temperature, Al-substituted β-Ga2O3 achieves 38.91 W/mK, more than 2-fold that of pristine <em>β</em>-Ga₂O₃ (17.10 W/mK) and even higher than <em>β</em>-Al₂O₃ (30.52 W/mK). This enhancement, unusual due to the heavier atomic mass and mixed mass distribution, is rooted in suppressed anharmonic characteristics caused by reduced bonding strength inhomogeneity. Our results may inspire the rational design of materials with tailored thermal properties through chemical bonding mechanisms.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101677"},"PeriodicalIF":10.0,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effectively tuning phonon transport across Al/nonmetal interfaces through controlling interfacial bonding strength without modifying thermal conductivity","authors":"Weidong Zheng ,&nbsp;Zhuo Miao ,&nbsp;Xue Zhou ,&nbsp;Guojun Li ,&nbsp;Hui Wu ,&nbsp;Jingxuan Wei ,&nbsp;Hongkun Li","doi":"10.1016/j.mtphys.2025.101676","DOIUrl":"10.1016/j.mtphys.2025.101676","url":null,"abstract":"<div><div>Tuning phonon transport across interfaces is crucial for optimizing thermal management of various microelectronics, where efficient heat dissipation and effective thermal insulation are essential for different devices. Previous strategies are either limited by the operating conditions or necessitate compromising the thermal dissipation performance of underlying substrates. Here, we propose an effective method to tune phonon transport across non-ideal realistic Al/nonmetal interfaces by modulating interfacial bonding strength, without altering the thermal conductivity of underlying substrates. We achieve up to a 3-fold increase in interfacial thermal conductance (<em>G</em>) through variations in deposition methods and surface pretreatments. Our non-destructive picosecond acoustic measurements reveal a strong correlation between <em>G</em> and acoustic transmission coefficient, confirming that the observed enhancement in <em>G</em> is primarily due to the larger interfacial bonding strength, facilitated by the contamination removal and covalent bond formation during sputtering deposition. Our measured temperature dependence of <em>G</em> suggests that the differing interfacial bonding strength mainly affects the transmission of low-frequency phonons. Moreover, we observe that the effective phonon transmission probability of non-ideal realistic Al/nonmetal interfaces exhibits remarkable substrate independence, revealing that, unlike commonly emphasized in previous studies, the similarity in phonon density of states (DOS) is not a necessary requirement for enhancing the phonon transport across these interfaces. Instead, interfacial bonding strength plays a more dominant role in governing <em>G</em> of non-ideal realistic interfaces. We also demonstrate the long-term stability of the enhanced <em>G</em> after extended storage and confirm the effectiveness of our methods over a temperature range of 80–500 K. Our findings advance the fundamental understanding of phonon transport across non-ideal realistic interfaces and should be useful in ongoing efforts for thermal management in microelectronics.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101676"},"PeriodicalIF":10.0,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143435690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MXene Nb2C/MoS2 heterostructure: Nonlinear optical properties and a new broadband saturable absorber for ultrafast photonics","authors":"Qing Wu ,&nbsp;LiuXing Peng ,&nbsp;JinLai Zhao ,&nbsp;Kun Sun ,&nbsp;Si Chen ,&nbsp;WeiChun Huang","doi":"10.1016/j.mtphys.2025.101678","DOIUrl":"10.1016/j.mtphys.2025.101678","url":null,"abstract":"<div><div>We for the first time demonstrate an all-fiber, ytterbium/erbium/thulium-doped, mode-locked laser system using a MXene/transition metal dichalcogenides (TMDs)-based heterostructure (Nb₂C/MoS₂) as a broadband saturable absorber (SA) to the best of our knowledge. The broadband saturable absorber, fabricated by optical deposited method, integrated MXene Nb₂C/MoS₂ and tapered fiber, exhibits strong nonlinear optical response at wavelengths of 1.0 μm, 1.5 μm and 2 μm. 12.4 ps/96.5 fs/551 fs stable pulses at 1050.00 nm/1597.50 nm/1901.97 nm are achieved, as the shortest pulse durations, respectively, based on the Nb₂C/MoS₂ in ytterbium/erbium/thulium-doped fiber laser to date. Through intracavity dispersion management, the MXene Nb₂C/MoS₂ based erbium-doped cavity can generate a 96.5 fs pulse with a spectral width of 43.36 nm, and both of pulse time and spectral width are the shortest and widest values in an all-fiber laser to date, respectively. Our results validate the broadband operating characteristics of MXene Nb₂C/MoS₂ devices in all-fiber lasers from 1 to 2 μm. The outstanding nonlinear optical properties of MXene Nb₂C/MoS₂ provide extensive prospects for its application in fields such as electronic devices and optoelectronic devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101678"},"PeriodicalIF":10.0,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143427408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature annealing induces superior shock-resistant performance in FeCoCrNiCu high-entropy alloy","authors":"Guoxiang Shen ,&nbsp;Hongcai Xie ,&nbsp;Zhengchen Han ,&nbsp;Junming Xiong ,&nbsp;Chaofan Li ,&nbsp;Hongwei Zhao ,&nbsp;Luquan Ren ,&nbsp;Zhichao Ma","doi":"10.1016/j.mtphys.2025.101679","DOIUrl":"10.1016/j.mtphys.2025.101679","url":null,"abstract":"<div><div>By virtue of ultrahigh hardness, excellent wear resistance, and superior thermal stability, FeCoCrNiCu high-entropy alloys (HEAs) have promise for a wide range of structural applications. However, the focus of existing studies has been on quasi-static or static conditions, while a fundamental understanding is still limited to the mechanical response and deformation behavior under dynamic loading. Here, the dynamic compression test was carried out to explore the dynamic response mechanism of the FeCoCrNiCu HEA in terms of annealing temperature. Low-temperature annealing was confirmed to significantly improve the dynamic strength. In particular, the yield strength and final flow stress of the annealed HEAs at 300 °C were demonstrated to be as high as 1178.2 MPa and 1797.9 MPa, which was 113.6 % and 54.5 % higher than that of the as-cast counterparts, respectively. Our results revealed that this substantial increase in strength came from a combination of mechanisms, involving dislocation, twinning and fine grain strengthening. In addition, the energy absorption per unit volume of HEAs annealed at 300 °C at maximum strain was measured to be as high as 308.05 MJ/m³ (only 262.55 MJ/m³ for the as-cast counterpart), indicating excellent energy absorption capability. Our investigation reveals the dynamic deformation behaviors and mechanisms of FeCoCrNiCu HEAs, providing valuable guidance for designing and developing HEAs with excellent mechanical properties under dynamic loading.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101679"},"PeriodicalIF":10.0,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143435525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}