V. Chornii, V. Boyko, S. Nedilko, V. Scherbatskyi, K. Terebilenko, P. Teselko, O. Gomenyuk, Vadym Sheludko
{"title":"Morphology and Luminescence Properties of Cellulose+KBi0.99Pr0.01 (MoO4)2 Composites","authors":"V. Chornii, V. Boyko, S. Nedilko, V. Scherbatskyi, K. Terebilenko, P. Teselko, O. Gomenyuk, Vadym Sheludko","doi":"10.1109/ELNANO54667.2022.9927089","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9927089","url":null,"abstract":"The procedure of the samples preparation, morphology and luminescence properties of composites those consist of cellulose matrix and praseodymium-doped potassium bismuth molybdate micro- and nanoparticles as a filler are reported. The optical and scanning electron microscopy has shown the homogeneity of the samples in the scale above 100 $mumathrm{m}$. The size distribution of oxide particles is found to be in a range from $sim 100$ nm up to 3 $mu mathrm{m}$. Chemical element analysis indicates uniform distribution of oxide and polymer components over the studied area. The samples reveal intensive photoluminescence of $text{Pr}^{3+}$ ions if composite excitation is at 448 nm and cellulose-related luminescence under excitation at shorter wavelength −405 nm. The study of influence of temperature on luminescence characteristics of composites in the temperature range 18 - $75 ^{circ}mathrm{C}$ shows that intensity of $text{Pr}^{3+}text{-}$ related luminescence decreases on about 40 %, while cellulose-related photoluminescence decreases on about 20%. The composites under study are prospective materials for elaboration of luminescent light emitting diodes covers.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"161 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124236483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Biomethanogenesis Processes of Bird Droppings Mixtures with Substances Containing Lignin Under the Influence of Physical Fields","authors":"M. Zablodskiy, V. Pliuhin, Peter Kucheruk","doi":"10.1109/ELNANO54667.2022.9926999","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9926999","url":null,"abstract":"Based on experimental data, recommendations are proposed for intensifying the processes of biomethanogenesis of mixtures of bird droppings with substances containing lignin under the controlled action of thermal, magnetic and electric fields and mechanical vibrations for bioreactors of farms. The results of an electromagnetic field modeling in the bioreactor showed both electrical and mechanical effects on the mixture consisting of straw, bird droppings and laboratory inoculum. The conducted experimental studies confirmed the increase in the intensity of mixture processing and a significant increase in the lag phase of the process, a decrease in the cumulative indicators of the biogas and methane output in comparison with the reactor, in which there was no low-frequency electromagnetic field. Experimental confirmation of the favorable effect of the magnetic field on the activity of methane bacteria under the influence of a static magnetic field and a magnetodynamic field at frequency 2 Hz and continuous stirring has been obtained. In addition, the optimal composition of the mixture was determined, which leads to an increase in the biogas yield.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124537763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Berdnik, O. Dumin, V. Katrich, M. Nesterenko, S. Pshenichnaya, S. Shulga
{"title":"Determination of the Effective Permittivity of Quartz Nanocomposites with Fullerene Inclusions","authors":"S. Berdnik, O. Dumin, V. Katrich, M. Nesterenko, S. Pshenichnaya, S. Shulga","doi":"10.1109/ELNANO54667.2022.9927069","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9927069","url":null,"abstract":"The method of reducing the permittivity of radiotransparent materials based on silicon ceramics by implantation of lattices of fullerene inclusions into their structures is investigated. A solution to the problem of determining the effective values of the permittivity and permeability of a nanocomposite material with spherical fullerene inclusions is presented. The suggested approach of producing new nanocomposites makes it possible to maintain the other technical parameters of the ceramic structure like i.e. mechanical strength, erosion resistance, absence of ablation for the temperatures of 1400°C and higher. It is demonstrated that the application of inclusions in the form of fullerenes permits to decrease the value of the effective permittivity of the nanocomposites by 10-17%.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114560743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Highly Sensitive Broadband SiGe HBT LNA: Genetic Algorithm based Optimization and Design Methodology","authors":"Abadahigwa Bimana, S. Sinha","doi":"10.1109/ELNANO54667.2022.9927081","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9927081","url":null,"abstract":"This paper extends the work of the authors on highly sensitive broadband silicon germanium heterojunction bipolar transistor (SiGe HBT) low-noise amplifiers with regard to their optimization based on the genetic algorithm and proposes a design methodology. The methodology aims at achieving a sub-1 dB noise figure at room temperature. The amplifier uses inductively degenerated common-emitter transistors in a cascode configuration, and a noise figure close to the minimum achievable one is obtained by biasing the SiGe HBTs at an emitter current density corresponding to minimum noise. Noise matching is achieved by connecting several identical transistors in parallel, while impedance matching relies on limiting the number of passive components for the matching network to the absolute minimum. This is done by the base-collector capacitance used as a network element and by means of an additional noiseless on-chip component. A sub-1 dB noise figure of 0.6 dB is shown by simulation without optimization by the genetic algorithm, with a return loss better than 10 dB, using a 130 nm SiGe HBT process. The bandwidth of the low-noise amplifier spans from 300 MHz to 1.4 GHz. The methodology validates that SiGe HBTs are suitable for broadband ultra-low noise amplifiers for radio astronomy and that the performance of the proposed amplifier can be further optimized.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116987425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Druzhinin, Y. Khoverko, I. Ostrovskii, A. Moroz, I. Kogut, V. Holota
{"title":"Low Temperature Parameters of Exchange Interaction of the Polycrystalline Layers in SOI-Structures","authors":"A. Druzhinin, Y. Khoverko, I. Ostrovskii, A. Moroz, I. Kogut, V. Holota","doi":"10.1109/ELNANO54667.2022.9927129","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9927129","url":null,"abstract":"The article deals with to the study of the peculiarities of charge carrier transfer in polycrystalline films of SOI-structures, doped with boron to concentrations corresponding to the metal-insulator transition. The magnetoresistance of polysilicon in SOI-structures under the action of magnetic fields up to 14 T at temperatures of 4.2 K was studied. A detailed analysis of the results of studies of the magnetic transport properties of poly-Si was performed. It is established that at low-temperature transfer of charge carriers in polycrystalline films there is a hopping conductivity, the parameters of which can be estimated by strong spin-orbit interaction within the framework of the theory of weak localization.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117225941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Linevych, V. Koval, M. Dusheiko, Y. Yakymenko, Maryna Lakyda, V. Barbash
{"title":"Silicon Diode Structures Based on Nanowires for Temperature Sensing Application","authors":"Y. Linevych, V. Koval, M. Dusheiko, Y. Yakymenko, Maryna Lakyda, V. Barbash","doi":"10.1109/ELNANO54667.2022.9927122","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9927122","url":null,"abstract":"In this work, diode temperature sensors based on silicon nanowires (SiNWs) were fabricated. SiNWs were obtained by means of metal-assisted chemical etching of silicon (MACE). The surface morphology of silicon nanowires was studied by the scanning electron microscopy (SEM). The SEM results showed that a periodic array of silicon nanowires with a height of $4.9 ldots 5.8 mu mathrm{m}$ and a width of $k$ was obtained. The influence of MACE synthesis parameters on electrical and thermosensitive characteristics of the devices was studied. Obtained thermodiodes were studied in two different modes: constant current mode and constant voltage mode. It was found that the maximum values of the rectification ratio (1207) and thermal sensitivity (3 mV/K) were obtained for the deposition time of Ag-NPs of 20 s and the etching time of silicon of 90–150 min. For comparison, obtained rectification coefficient was 3 times higher, and thermal sensitivity was about 50% better than that of a silicon diode without SiNWs.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129531811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Features of Force Field Mathematical Model of Neodim Magnet in Drug Delivery Device","authors":"Yurii Zaporozgets, Vasyl Budko","doi":"10.1109/ELNANO54667.2022.9927072","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9927072","url":null,"abstract":"The features of magnetic technologies application in medical practice for targeted drug delivery to pathogenic zones and the peculiarities of designs of magnetic devices intended for this purpose are considered. The specificity of using permanent magnets in open magnetic systems of these devices are noted. It is shown that, under certain conditions, the use of highly coercive neodymium magnets is preferable. Mathematical models were compiled and analytical formulas were obtained to calculate force fields created by neodymium magnets, which ensure the movement of magnetic nanoparticles along the body vessels.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130614038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the Plane E-polarized EM Wave Scattering by Flat Impedance Strip Gratings","authors":"G. Koshovy, A. G. Koshovy, O.O. Ahapova","doi":"10.1109/ELNANO54667.2022.9926997","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9926997","url":null,"abstract":"New modification of the integral equation technique is used for mathematical modelling of the plane E- polarized electromagnetic wave scattering by a single flat electrically conductive strip and flat grating consisting of finite number of electrically conductive strips. The scattering problems are formulated in the form of two-dimensional external mixed boundary-value problems for the homogeneous Helmholtz equation on corresponding segment or system of segments. The target of the examination is to find correct, simple and effective mathematical model of the plane E- polarized electromagnetic wave scattering by electrically conductive strip gratings.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130412949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of Radiation on the Electrical Properties of Nanocomposites","authors":"I. Zhydenko, H. Klym, I. Karbovnyk, D. Chalyy","doi":"10.1109/ELNANO54667.2022.9927074","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9927074","url":null,"abstract":"Influence of $beta$ - and $gamma$ -radiation on the electrical properties of nanocomposites obtained from poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) and multi-walled carbon nanotubes were performed. It is shown that dose of irradiation results in change of the electrical properties of nanocomposites. Increasing of amount of the conductive nanotubes in polymer matrix is accompanied of reduce of electrical resistance of the systems and improving of their radiation sensitivity/ it is established that radiation-induced transformation is observed both in polymer matrix and nanotubes.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127912257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yu. E. Nikolaenko, Volodymir Kravets, R. Melnyk, D. Pekur, Dmitrii Kozak, A. Solomakha, L. Lipnitskyi
{"title":"Increasing Performance of Cooling Systems for Radar Transmit/Receive Modules","authors":"Yu. E. Nikolaenko, Volodymir Kravets, R. Melnyk, D. Pekur, Dmitrii Kozak, A. Solomakha, L. Lipnitskyi","doi":"10.1109/ELNANO54667.2022.9926994","DOIUrl":"https://doi.org/10.1109/ELNANO54667.2022.9926994","url":null,"abstract":"The authors take into consideration the placement of the antenna sheet and the transmit/receive modules of the active phased array antenna in its operating position to propose a new efficient design of the air-cooling system for transmit/receive modules with built-in heat pipes of simplified design. This paper presents the results of computer simulation of two alternative designs of the air-cooling system based on a heat sink: a version without heat pipes and one with 16 flat heat pipes with threaded capillary structure. The effect of changing the velocity of cooling air flowing in the heat pipe channels from 2 to 10 m/s on the temperature field distribution and the temperature of the hottest transistors is demonstrated for both versions at a total thermal power of 8 transistors amounting to 224 W. At an air velocity of 2 m/s, the use of heat pipes in the cooling system made it possible to reduce the temperature of the hottest transistor by 20 K, and at an air velocity of 10 m/s, by 14.9 K. The recommended air velocity in the heat sink channels was determined to be in the range from 4 to 8 m/s, in which the temperature of the transistors is reduced to 33.3% compared to the heat sink design without heat pipes.","PeriodicalId":178034,"journal":{"name":"2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128795817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}