Low Temperature Parameters of Exchange Interaction of the Polycrystalline Layers in SOI-Structures

Abstract

The article deals with to the study of the peculiarities of charge carrier transfer in polycrystalline films of SOI-structures, doped with boron to concentrations corresponding to the metal-insulator transition. The magnetoresistance of polysilicon in SOI-structures under the action of magnetic fields up to 14 T at temperatures of 4.2 K was studied. A detailed analysis of the results of studies of the magnetic transport properties of poly-Si was performed. It is established that at low-temperature transfer of charge carriers in polycrystalline films there is a hopping conductivity, the parameters of which can be estimated by strong spin-orbit interaction within the framework of the theory of weak localization.