Journal of Vacuum Science & Technology A最新文献_第8页

Solid-source metal-organic MBE for elemental Ir and Ru films 单质Ir和Ru薄膜的固体源金属有机MBE

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-29 DOI: 10.1116/6.0002955

Sreejith Nair, Kyle Noordhoek, Dooyong Lee, Christopher J. Bartel, Bharat Jalan

{"title":"Solid-source metal-organic MBE for elemental Ir and Ru films","authors":"Sreejith Nair, Kyle Noordhoek, Dooyong Lee, Christopher J. Bartel, Bharat Jalan","doi":"10.1116/6.0002955","DOIUrl":"https://doi.org/10.1116/6.0002955","url":null,"abstract":"Thin films of elemental metals play a very important role in modern electronic nano-devices as conduction pathways, spacer layers, spin-current generators/detectors, and many other important functionalities. In this work, by exploiting the chemistry of solid metal-organic source precursors, we demonstrate the molecular beam epitaxy synthesis of elemental Ir and Ru metal thin films. The synthesis of these metals is enabled by thermodynamic and kinetic selection of the metal phase as the metal-organic precursor decomposes on the substrate surface. Film growth under different conditions was studied using a combination of in situ and ex situ structural and compositional characterization techniques. The critical role of substrate temperature, oxygen reactivity, and precursor flux in tuning film composition and quality is discussed in the context of precursor adsorption, decomposition, and crystal growth. Computed thermodynamics quantifies the driving force for metal or oxide formation as a function of synthesis conditions and changes in chemical potential. These results indicate that bulk thermodynamics are a plausible origin for the formation of Ir metal at low temperatures, while Ru metal formation is likely mediated by kinetics.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135243702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma 利用分子氧和SF6/H2等离子体连续暴露超导氮化钛薄膜的各向同性等离子体-热原子层刻蚀

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-26 DOI: 10.1116/6.0002965

Azmain A. Hossain, Haozhe Wang, David S. Catherall, Martin Leung, Harm C. M. Knoops, James R. Renzas, Austin J. Minnich

{"title":"Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma","authors":"Azmain A. Hossain, Haozhe Wang, David S. Catherall, Martin Leung, Harm C. M. Knoops, James R. Renzas, Austin J. Minnich","doi":"10.1116/6.0002965","DOIUrl":"https://doi.org/10.1116/6.0002965","url":null,"abstract":"Microwave loss in superconducting TiN films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabrication method which is capable of etching with angstrom-scale etch depth control and potentially less damage. However, while ALE processes for TiN have been reported, they either employ HF vapor, incurring practical complications, or the etch rate lacks the desired control. Furthermore, the superconducting characteristics of the etched films have not been characterized. Here, we report an isotropic plasma-thermal TiN ALE process consisting of sequential exposures to molecular oxygen and an SF6/H2 plasma. For certain ratios of SF6:H2 flow rates, we observe selective etching of TiO2 over TiN, enabling self-limiting etching within a cycle. Etch rates were measured to vary from 1.1 Å/cycle at 150°C to 3.2 Å/cycle at 350°C using ex situ ellipsometry. We demonstrate that the superconducting critical temperature of the etched film does not decrease beyond that expected from the decrease in film thickness, highlighting the low-damage nature of the process. These findings have relevance for applications of TiN in microwave kinetic inductance detectors and superconducting qubits.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135718546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge 多电平高电源的电子增强高功率脉冲磁控溅射:在Ar/Cr等离子体放电中的应用

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-26 DOI: 10.1116/6.0002857

J. Zgheib, L. Berthelot, J. Tranchant, N. Ginot, M.-P. Besland, A. Caillard, T. Minea, A. Rhallabi, P.-Y. Jouan

{"title":"Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge","authors":"J. Zgheib, L. Berthelot, J. Tranchant, N. Ginot, M.-P. Besland, A. Caillard, T. Minea, A. Rhallabi, P.-Y. Jouan","doi":"10.1116/6.0002857","DOIUrl":"https://doi.org/10.1116/6.0002857","url":null,"abstract":"A high-power impulse magnetron sputtering (HiPIMS) power supply, called e-HiPIMS, has been developed and used to deposit chromium thin films within an argon discharge. This power supply comprises three stages; each can deliver a voltage pulse up to 300 V. The advantage of this power supply is the possibility of tailoring a pulse waveform on the cathode with several voltage levels. This e-HiPIMS can operate in the standard HiPIMS mode (s-HiPIMS) and multipulse HiPIMS mode. Each voltage sequence is independently managed regarding the width, delay, and voltage level. They can all be synchronized, giving the s-HiPIMS, or shifted in time and added to each other. Hence, the idea is to favor a specific ion population compared to others, according to the process needs and the targeted application. A beneficial example used a three-pulse sequence with different voltage levels. The influence of the temporal behavior on the plasma parameters, namely, currents and electron energy, has been studied for each pulse sequence. The results show that the discharge current stays within the same order of magnitude as in the standard HiPIMS. The reference current level can be obtained quickly, adding a short over-pulse, even if its voltage level is relatively low. Furthermore, measurements by the Langmuir probe reveal that a maximum electron density is obtained at 0.2 and 0.6 Pa of argon for a configuration that adds two distinguished voltage-pulse sequences, one between 5 and 15 μs and the other between 20 and 40 μs. It comes out that this e-HiPIMS sequence significantly increases the electron density.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135718702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

β-Ga2O3 orientation dependence of band offsets with SiO2 and Al2O3 β-Ga2O3与SiO2和Al2O3波段偏移的取向依赖性

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-22 DOI: 10.1116/6.0003039

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, David C. Hays, Fan Ren, Stephen J. Pearton

引用次数: 0

Anticorrosive coatings made from polydopamine modified graphitic C3N4 composites with synergistic anticorrosion effects 聚多巴胺改性石墨C3N4复合材料的协同防腐涂料

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-22 DOI: 10.1116/6.0002769

Lijuan Li, Hongrui Yao, Wenya Bi, Wanlu Fu, Na Wang

{"title":"Anticorrosive coatings made from polydopamine modified graphitic C3N4 composites with synergistic anticorrosion effects","authors":"Lijuan Li, Hongrui Yao, Wenya Bi, Wanlu Fu, Na Wang","doi":"10.1116/6.0002769","DOIUrl":"https://doi.org/10.1116/6.0002769","url":null,"abstract":"Since uniform dispersion and robust interfacial compatibility of nanofiller with epoxy resin are the most critical parameters to improve the corrosion protection property, a new effective anticorrosion nanofiller [polydopamine (PDA)@g-C3N4-CeO2] is designed by stacking PDA modified g-C3N4 and nano-CeO2 with the help of a silane coupling agent. The structure and morphology of PDA@g-C3N4-CeO2 are characterized by FTIR, XRD, XPS, SEM, and TEM. Furthermore, the PDA@g-C3N4-CeO2 nanofiller is loaded within waterborne epoxy coating (WEC) and the corrosion resistance of the prepared nanocomposite coating is studied. It can be inferred from the dispersion test that g-C3N4 modified by PDA and nano-CeO2 exhibits excellent dispersion and compatibility in de-ionized water. The Electrochemical impedance spectroscope (EIS) results indicate that nanocomposite coating with PDA@g-C3N4-CeO2 exhibits the best corrosion resistance, and its low-frequency impedance (Zf=0.01Hz) is 1.78 × 109 Ω cm2, which is two orders of magnitude higher than that of pure WEC (4.27 × 107 Ω cm2). In the salt spray test, PDA@g-C3N4-CeO2/WEC also showed excellent long-term corrosion resistance with few corrosion products even after 600 h, which was consistent with the results of the EIS test. In addition, PDA@g-C3N4-CeO2/WEC also reflects the most fantastic adhesion strength (14.22 MPa), which is improved by 45.40% than that of pure WEC (9.78 MPa). Generally, the excellent protection properties of PDA@g-C3N4-CeO2/WEC are attributed to the presence of PDA and KH-550 modified nano-CeO2 on the surface of g-C3N4, which increase the compatibility and surface interactions between nanofillers and epoxy resin.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136060972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Si-containing interlayer using tetramethylsilene for diamondlike carbon film adhesion on low-alloy steel: The role of the interlayer deposition time 含硅中间层采用四甲基硅烯对类金刚石碳膜在低合金钢上的粘附作用:中间层沉积时间的作用

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-22 DOI: 10.1116/6.0002911

Jennifer Stefani Weber, Vanessa Piroli, Michael Cristian Goldbeck, Bruna Louise Perotti, Carla Daniela Boeira, Newton Kiyoshi Fukumasu, Alexandre Fassini Michels, Carlos Alejandro Figueroa

{"title":"Si-containing interlayer using tetramethylsilene for diamondlike carbon film adhesion on low-alloy steel: The role of the interlayer deposition time","authors":"Jennifer Stefani Weber, Vanessa Piroli, Michael Cristian Goldbeck, Bruna Louise Perotti, Carla Daniela Boeira, Newton Kiyoshi Fukumasu, Alexandre Fassini Michels, Carlos Alejandro Figueroa","doi":"10.1116/6.0002911","DOIUrl":"https://doi.org/10.1116/6.0002911","url":null,"abstract":"Diamondlike carbon (DLC) coatings provide interesting properties for industrial applications. However, the low adhesion of DLC coatings on any type of ferrous alloy compromises technological applications. One possible solution to this issue is the application of adhesion interlayers. The aim of this study is to investigate the adhesion of DLC films on low-alloy steel through the use of silicon-containing interlayers at different deposition times using tetramethylsilane. The role of time on the physical-chemical, microstructural, and tribological properties of the material system was evaluated. The interlayer thickness linearly increased and greater contributions of silicon bonds were measured as a function of the interlayer deposition time. Nevertheless, longer deposition times increased the roughness and defect ratio in DLC coatings. Although good enough adhesion for decorative applications was acquired, no drastic variation in the average critical load (∼4.2 N) for delamination was observed at different deposition times for the samples that achieved adhesion.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136060969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective mask deposition using SiCl4 plasma for highly selective etching process 采用SiCl4等离子体进行高选择性蚀刻工艺的选择性掩膜沉积

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-21 DOI: 10.1116/6.0002773

Miyako Matsui, Makoto Miura, Kenichi Kuwahara

{"title":"Selective mask deposition using SiCl4 plasma for highly selective etching process","authors":"Miyako Matsui, Makoto Miura, Kenichi Kuwahara","doi":"10.1116/6.0002773","DOIUrl":"https://doi.org/10.1116/6.0002773","url":null,"abstract":"We developed an area-selective deposition process for forming protective layers on top of masks generated using a microwave electron-cyclotron-resonance etching system. A deposition layer is formed only on SiO2 masks without forming an unnecessary deposition layer on the Si surfaces in the etching area, such as the bottoms of the patterns and isolated etching area. The protection layers were selectively formed on a SiO2 mask without forming on a Si etching area by using a SiCl4/H2/Cl2 plasma. The pretreatment to clean the Si and SiO2 surfaces before deposition was important for achieving selective deposition because selectivity appeared by nucleation delay on the cleaned Si surface. On the Si surface, adsorbed SiClx easily desorbed again by reacting with the Cl generated from the plasma. However, adsorbed SiClx on SiO2 was more difficult to desorb by reacting with Cl due to Si–O having a larger binding energy than Si–Si. After the deposition layer was selectively formed on the SiO2 mask, the layer was oxidized by using O2 plasma treatment to improve the etching resistance during the subsequent Si etching. We also investigated a Si etching process using selective deposition during the etching of a 25 nm-pitch line-and-space Si pattern with a SiO2 mask. Extremely highly selective etching was achieved using selective deposition without forming an unnecessary deposition on an isolated Si area.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136153201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of data preprocessing and machine learning hyperparameters on mass spectrometry imaging models 数据预处理和机器学习超参数对质谱成像模型的影响

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-20 DOI: 10.1116/6.0002788

Wil Gardner, David A. Winkler, David L. J. Alexander, Davide Ballabio, Benjamin W. Muir, Paul J. Pigram

{"title":"Effect of data preprocessing and machine learning hyperparameters on mass spectrometry imaging models","authors":"Wil Gardner, David A. Winkler, David L. J. Alexander, Davide Ballabio, Benjamin W. Muir, Paul J. Pigram","doi":"10.1116/6.0002788","DOIUrl":"https://doi.org/10.1116/6.0002788","url":null,"abstract":"The self-organizing map (SOM) is a nonlinear machine learning algorithm that is particularly well suited for visualizing and analyzing high-dimensional, hyperspectral time-of-flight secondary ion mass spectrometry (ToF-SIMS) imaging data. Previously, we compared the capabilities of the SOM with more traditional linear techniques using ToF-SIMS imaging data. Although SOMs perform well with minimal data preprocessing and negligible hyperparameter optimization, it is important to understand how different data preprocessing methods and hyperparameter settings influence the performance of SOMs. While these investigations have been reported outside of the ToF-SIMS field, no such study has been reported for hyperspectral MSI data. To address this, we used two labeled ToF-SIMS imaging datasets, one of which was a polymer microarray dataset, while the other was semisynthetic hyperspectral data. The latter was generated using a novel algorithm that we describe here. A grid-search was used to evaluate which data preprocessing methods and SOM hyperparameters had the largest impact on the performance of the SOM. This was assessed using multiple linear regression, whereby performance metrics were regressed onto each variable defining the preprocessing-hyperparameter space. We found that preprocessing was generally more important than hyperparameter selection. We also found statistically significant interactions between several parameters studied, suggesting a complex interplay between preprocessing and hyperparameter selection. Importantly, we identified interesting trends, both dataset specific and dataset agnostic, which we describe and discuss in detail.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136312977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tissue evolution and properties of plasma solid-state surface metallurgical TiCoCrNiWMo high-entropy alloy coatings 等离子体固态表面冶金TiCoCrNiWMo高熵合金涂层的组织演化与性能

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-19 DOI: 10.1116/6.0002872

Xin Li, Zixiang Zhou, Chenglei Wang, Haiqing Qin, Jijie Yang, Weijie Liu, Mulin Liang, Chong Liu, Hong Tan, Zhenjun Zhang

{"title":"Tissue evolution and properties of plasma solid-state surface metallurgical TiCoCrNiWMo high-entropy alloy coatings","authors":"Xin Li, Zixiang Zhou, Chenglei Wang, Haiqing Qin, Jijie Yang, Weijie Liu, Mulin Liang, Chong Liu, Hong Tan, Zhenjun Zhang","doi":"10.1116/6.0002872","DOIUrl":"https://doi.org/10.1116/6.0002872","url":null,"abstract":"Using plasma solid-state surface metallurgy is a new method for preparing high-entropy alloy (HEA) coatings. In this paper, based on the experience in plasma solid-state surface metallurgy and the HEA, the TiCoCrNiWMo HEA coatings with metallurgical bonding and gradient structure were prepared by five-element co-infiltration of Co–Cr–Ni–W–Mo on the surface of a TC4 substrate for the first time. The tissue morphology evolution and properties of HEA coatings at different holding temperatures were investigated. The results show that the HEA coating at the holding temperature of 1000 °C consists of a deposited layer + diffusion layer. When the temperature exceeds the (α + β)/β transition temperature of TC4, only the deposited layer is formed on the surface of the substrate. Holding temperature does not affect the phase composition of the HEA coating. The best bonding performance of the HEA coating with the substrate was achieved at a holding temperature of 1000 °C, with a bonding force of about 63.81 N. All the HEA coatings showed different degrees of improvement in hardness, wear resistance, and corrosion resistance compared to the substrate. The HEA coatings prepared at 1000 °C had the best performance, with hardness and wear resistance 1.5 and 8.9 times higher than those of the substrate, respectively, and excellent corrosion resistance in acidic, alkaline, and salt solutions. The results show that the new TiCoCrNiWMo HEA coatings prepared by plasma solid-state surface metallurgy have good wear resistance and corrosion resistance and have good application prospects in the fields of automobile manufacturing and shipbuilding.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135014344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-joule heating assisted field emission following the Child–Langmuir law 遵循Child-Langmuir定律的自焦耳加热辅助场发射

3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2023-09-19 DOI: 10.1116/5.0159964

Yoichiro Neo, Rikuto Oda, Jonghyun Moon

引用次数: 0