{"title":"用双(异丙基环戊二烯基)钼(IV)二氢化体和H2/N2/Ar等离子体等离子体增强碳化钼和碳氮化膜的原子层沉积","authors":"Wangu Kang, Ji Sang Ahn, Jeong Hwan Han","doi":"10.1116/6.0002970","DOIUrl":null,"url":null,"abstract":"Molybdenum carbide (MoC) and molybdenum carbonitride (MoCN) films were successfully deposited by plasma-enhanced atomic layer deposition (PEALD) using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride [(iPrCp)2MoH2] as the Mo precursor at temperatures of 200−400 °C. To obtain the MoC and MoCN films, 4%H2/96%Ar (H2/Ar) and 4%H2/96%N2 (H2/N2) plasmas were selectively used as co-reactants, respectively. PEALD MoC and MoCN exhibited atomic layer deposition temperature windows of 200−400 and 250−300 °C with growth per cycle of 0.012 and 0.047 nm/cycle, respectively. X-ray photoelectron spectroscopy revealed that the 300 °C-grown MoC film prepared using an H2/Ar plasma contained Mo–C bonds and an atomic composition of MoC0.77. In contrast, the 300 °C-grown MoCN film prepared using an H2/N2 plasma exhibited Mo–C and Mo–N bonds, with an atomic composition of MoC0.31N0.23. The atomic composition of the PEALD MoCN films varied depending on the deposition temperature; at 200 °C, the carbon-rich MoC0.52N0.16 film was obtained, whereas the MoC0.23N0.23 film with a carbon-to-nitrogen ratio of 1 was grown at a higher temperature of 400 °C. The 300 °C-grown MoC film was crystallized into a cubic δ-MoC phase, whereas the PEALD MoCN film showed diffraction peaks corresponding to the hexagonal MoC and molybdenum nitride (MoN) structures. The as-deposited PEALD MoC and MoCN films at 300 °C exhibited resistivities of 600 and 3038 μΩ cm, respectively, and post-deposition annealing at 700−800 °C resulted in significantly low resistivities of 37−203 μΩ cm due to the formation of metallic Mo films.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"31 1","pages":"0"},"PeriodicalIF":2.4000,"publicationDate":"2023-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H2/N2/Ar plasma\",\"authors\":\"Wangu Kang, Ji Sang Ahn, Jeong Hwan Han\",\"doi\":\"10.1116/6.0002970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Molybdenum carbide (MoC) and molybdenum carbonitride (MoCN) films were successfully deposited by plasma-enhanced atomic layer deposition (PEALD) using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride [(iPrCp)2MoH2] as the Mo precursor at temperatures of 200−400 °C. To obtain the MoC and MoCN films, 4%H2/96%Ar (H2/Ar) and 4%H2/96%N2 (H2/N2) plasmas were selectively used as co-reactants, respectively. PEALD MoC and MoCN exhibited atomic layer deposition temperature windows of 200−400 and 250−300 °C with growth per cycle of 0.012 and 0.047 nm/cycle, respectively. X-ray photoelectron spectroscopy revealed that the 300 °C-grown MoC film prepared using an H2/Ar plasma contained Mo–C bonds and an atomic composition of MoC0.77. In contrast, the 300 °C-grown MoCN film prepared using an H2/N2 plasma exhibited Mo–C and Mo–N bonds, with an atomic composition of MoC0.31N0.23. The atomic composition of the PEALD MoCN films varied depending on the deposition temperature; at 200 °C, the carbon-rich MoC0.52N0.16 film was obtained, whereas the MoC0.23N0.23 film with a carbon-to-nitrogen ratio of 1 was grown at a higher temperature of 400 °C. The 300 °C-grown MoC film was crystallized into a cubic δ-MoC phase, whereas the PEALD MoCN film showed diffraction peaks corresponding to the hexagonal MoC and molybdenum nitride (MoN) structures. The as-deposited PEALD MoC and MoCN films at 300 °C exhibited resistivities of 600 and 3038 μΩ cm, respectively, and post-deposition annealing at 700−800 °C resulted in significantly low resistivities of 37−203 μΩ cm due to the formation of metallic Mo films.\",\"PeriodicalId\":17490,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2023-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0002970\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0002970","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H2/N2/Ar plasma
Molybdenum carbide (MoC) and molybdenum carbonitride (MoCN) films were successfully deposited by plasma-enhanced atomic layer deposition (PEALD) using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride [(iPrCp)2MoH2] as the Mo precursor at temperatures of 200−400 °C. To obtain the MoC and MoCN films, 4%H2/96%Ar (H2/Ar) and 4%H2/96%N2 (H2/N2) plasmas were selectively used as co-reactants, respectively. PEALD MoC and MoCN exhibited atomic layer deposition temperature windows of 200−400 and 250−300 °C with growth per cycle of 0.012 and 0.047 nm/cycle, respectively. X-ray photoelectron spectroscopy revealed that the 300 °C-grown MoC film prepared using an H2/Ar plasma contained Mo–C bonds and an atomic composition of MoC0.77. In contrast, the 300 °C-grown MoCN film prepared using an H2/N2 plasma exhibited Mo–C and Mo–N bonds, with an atomic composition of MoC0.31N0.23. The atomic composition of the PEALD MoCN films varied depending on the deposition temperature; at 200 °C, the carbon-rich MoC0.52N0.16 film was obtained, whereas the MoC0.23N0.23 film with a carbon-to-nitrogen ratio of 1 was grown at a higher temperature of 400 °C. The 300 °C-grown MoC film was crystallized into a cubic δ-MoC phase, whereas the PEALD MoCN film showed diffraction peaks corresponding to the hexagonal MoC and molybdenum nitride (MoN) structures. The as-deposited PEALD MoC and MoCN films at 300 °C exhibited resistivities of 600 and 3038 μΩ cm, respectively, and post-deposition annealing at 700−800 °C resulted in significantly low resistivities of 37−203 μΩ cm due to the formation of metallic Mo films.
期刊介绍:
Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.