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Journal of The Vacuum Society of Japan最新文献

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Development of Titanium Micro Mold Manufacturing Technology for the Microfluidic Chip by Plasma Etching 等离子体刻蚀微流控芯片钛微模具制造技术的发展
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.145
T. Hitobo, Masahiro Shiroki, H. Nabesawa, T. Asaji, T. Abe
{"title":"Development of Titanium Micro Mold Manufacturing Technology for the Microfluidic Chip by Plasma Etching","authors":"T. Hitobo, Masahiro Shiroki, H. Nabesawa, T. Asaji, T. Abe","doi":"10.3131/JVSJ2.60.145","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.145","url":null,"abstract":"Development of Titanium Micro Mold Manufacturing Technology for the Micro‰uidic Chip by Plasma Etching Takeshi HITOBO1, Masahiro SHIROKI2, Hirofumi NABESAWA3, Toyohisa ASAJI4 and Takashi ABE5 1Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama-shi, Toyama 9301305, Japan 2Richell Corp., 515 shoin, Nakaniikawagun Kamiichimachi, Toyama-shi, Toyama 9300357, Japan 3Toyama Industrial Technology Center, 383 Takata, Toyama-shi, Toyama 9300866, Japan 4National Institute of Technology, Toyama College, 13 Hongomachi, Toyama-shi, Toyama 9398045, Japan 5Graduate School of Science and Technology, Niigata University, 8050 Ikarashininocho, Nishi-ku, Niigata-shi, Niigata 9502181, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"58 1","pages":"145-147"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87082504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a Hyperthermal State-selected Molecular Oxygen Beam and Its Application to the Study of O 2 Adsorption on Pt(111) 高温选态分子氧束的研制及其在Pt(111)上o2吸附研究中的应用
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/jvsj2.60.307
M. Kurahashi, H. Ueta
{"title":"Development of a Hyperthermal State-selected Molecular Oxygen Beam and Its Application to the Study of O 2 Adsorption on Pt(111)","authors":"M. Kurahashi, H. Ueta","doi":"10.3131/jvsj2.60.307","DOIUrl":"https://doi.org/10.3131/jvsj2.60.307","url":null,"abstract":"A single spin-rotational state-selected [(J,M)=(2,2)] O2 beam allows us to conduct a spinand alignment -controlled O2 chemisorption experiment. We have recently expanded its available translational energy range to 0.10.9 eV. In this study, the beam has been used for the analysis of O2 chemisorption on Pt(111). Although this system has been investigated intensively due to its technological importance, the origin of the low O2 sticking probability and its unusual energy dependence has remained unclear. The present results indicate that, at low translational energy (E0) conditions, direct activated chemisorption occurs only when the O2 axis is nearly parallel to the surface. At high energy conditions (E0>0.5 eV), however, the sticking probability for the parallel O2 decreases with E0 while that of the perpendicular O2 increases, accounting for the nearly energy-independent O2 sticking probability determined previously by a randomly oriented O2 beam.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"14 1","pages":"307-312"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88440287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices 不同半导体材料在能量收集和节能器件中的键合
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/jvsj2.60.421
N. Shigekawa
{"title":"Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices","authors":"N. Shigekawa","doi":"10.3131/jvsj2.60.421","DOIUrl":"https://doi.org/10.3131/jvsj2.60.421","url":null,"abstract":"Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"62 1","pages":"421-427"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88341533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of Graphene by Magnetron-Plasma-Enhanced Chemical Vapor Deposition on Different Substrate Materials 磁控管-等离子体增强化学气相沉积在不同衬底材料上合成石墨烯
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/jvsj2.60.459
Akito Nonomura, K. Kawakami, S. Ishidoshiro, Y. Kawamura, Y. Hayashi
{"title":"Synthesis of Graphene by Magnetron-Plasma-Enhanced Chemical Vapor Deposition on Different Substrate Materials","authors":"Akito Nonomura, K. Kawakami, S. Ishidoshiro, Y. Kawamura, Y. Hayashi","doi":"10.3131/jvsj2.60.459","DOIUrl":"https://doi.org/10.3131/jvsj2.60.459","url":null,"abstract":"Graphene was synthesized by radio-frequency magnetron-plasma-enhanced chemical vapor deposition on Si and SiO2 substrates along with on Cu substrate. Although the incubation period was longer and the nucleation density was smaller than the growth on Cu substrate, graphene was grown on Si and SiO2 substrates. It was speculated that the incubation period and nucleation density depend on the density of carbon precursor on substrate that is aŠected by the desorption speed of carbon or hydrocarbon.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"152 1","pages":"459-462"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83694932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of Thermal Plasma Jet Induced Annealing Technology and Its Application to Electronic Device Fabrication 热等离子体射流诱导退火技术的发展及其在电子器件制造中的应用
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.77
S. Higashi
{"title":"Development of Thermal Plasma Jet Induced Annealing Technology and Its Application to Electronic Device Fabrication","authors":"S. Higashi","doi":"10.3131/JVSJ2.60.77","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.77","url":null,"abstract":"Atmospheric pressure micro-thermal-plasma-jet (mTPJ) irradiation on amorphous silicon (aSi) strips and its application to thin ˆlm transistor (TFT) fabrication have been investigated. Strip channel with the width smaller than 3 mm is eŠective to eliminate random grain boundaries by ˆltering eŠect. High speed scanning of mTPJ suppresses mass transfer of molten Si and generation of in grain defects. By introducing strip channel, high performance TFTs with a high average ˆeld eŠect mobility (mFE) of 503 cm2V-1s-1 (nchannel) are successfully fabricated with small device to device variation. CMOS shift register fabricated with strip channel TFTs was operated by 5V power supply at 50MHz. These results indicate that mTPJ crystallization of strip channel is quite promising for next generation TFT applications.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"31 1","pages":"77-80"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81659859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X線照射下におけるフィールドエミッタアレイの動作特性評価装置;X線照射下におけるフィールドエミッタアレイの動作特性評価装置;System for Evaluation of Electron Emission Properties of Field Emitter Arrays under X-ray Irradiation X射线照射下的场发射器阵列操作特性评估设备;X射线照射下的场发射器阵列操作特性评估设备;Electron Emission Properties of Field Emitter Arrays under X-ray System for Evaluationirradiation
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.328
Yasuhito Gotoh, Hiroshi Tsuji, Masayoshi Nagao, Masafumi Akiyoshi, Ikuji Takagi
{"title":"X線照射下におけるフィールドエミッタアレイの動作特性評価装置;X線照射下におけるフィールドエミッタアレイの動作特性評価装置;System for Evaluation of Electron Emission Properties of Field Emitter Arrays under X-ray Irradiation","authors":"Yasuhito Gotoh, Hiroshi Tsuji, Masayoshi Nagao, Masafumi Akiyoshi, Ikuji Takagi","doi":"10.3131/JVSJ2.60.328","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.328","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"1 1","pages":"328-333"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78133600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
International Vacuum Congress (IVC-20)の会議報告Vacuum Science and Technology/Surface Science/Applied Surface Science報告 国际真空大会(IVC-20)真空科学与技术/表面科学/应用表面科学
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.70
孝範 越川
{"title":"International Vacuum Congress (IVC-20)の会議報告Vacuum Science and Technology/Surface Science/Applied Surface Science報告","authors":"孝範 越川","doi":"10.3131/JVSJ2.60.70","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.70","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"29 1","pages":"70-71"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90708227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-high Sensitivity Flat Image Pick-up Tube with Field Emitter Array 带场发射阵列的超高灵敏度平面摄像管
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.18
M. Nanba
{"title":"Ultra-high Sensitivity Flat Image Pick-up Tube with Field Emitter Array","authors":"M. Nanba","doi":"10.3131/JVSJ2.60.18","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.18","url":null,"abstract":"A 640×480 pixel ˆeld emitter array (FEA) image sensor with a highgain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahighsensitivity compact image sensors for highdeˆnition TV cameras. Experiments showed that the prototype sensor could obtain clear images with little noise under illumination on a level equivalent to moonlight, with su‹cient resolution while consuming far less power than current ultrahighsensitivity pickup tubes. Furthermore, various technologies which were suitable for practical image sensor have been developed.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"81 1","pages":"18-23"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90858752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Problem-Solving Exercise for Basic Understanding of Vacuum Science and Technology (2) 真空科学与技术基础知识解题练习(二)
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/jvsj2.60.212
K. Shibata
{"title":"Problem-Solving Exercise for Basic Understanding of Vacuum Science and Technology (2)","authors":"K. Shibata","doi":"10.3131/jvsj2.60.212","DOIUrl":"https://doi.org/10.3131/jvsj2.60.212","url":null,"abstract":"ProblemSolving Exercise for Basic Understanding of Vacuum Science and Technology (2) Kyo SHIBATA1,2,3 1High Energy Accelerator Research Organization (KEK), 11 Oho, Tsukuba-shi, Ibaraki 3050801, Japan 2SOKENDAI (The Graduate University for Advanced Studies), 11 Oho, Tsukuba-shi, Ibaraki 3050801, Japan 3Vacuum Society of Japan, Education Committee, 358 Shiba-koen, Minato-ku, Tokyo 1050011, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"7 1","pages":"212-219"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79023519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
大電力パルススパッタ小特集に寄せて;大電力パルススパッタ小特集に寄せて;Preface to the Special Issue for the High Power Impulse/Pulsed Magnetron Sputtering 大功率脉冲小特集寄;大功率脉冲小特集寄;Preface to the Special Issue for the High Power Impulse/Pulsed Magnetron Sputtering
Journal of The Vacuum Society of Japan Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.339
T. Nakano
{"title":"大電力パルススパッタ小特集に寄せて;大電力パルススパッタ小特集に寄せて;Preface to the Special Issue for the High Power Impulse/Pulsed Magnetron Sputtering","authors":"T. Nakano","doi":"10.3131/JVSJ2.60.339","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.339","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"19 1","pages":"339-340"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82354107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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