磁控管-等离子体增强化学气相沉积在不同衬底材料上合成石墨烯

Akito Nonomura, K. Kawakami, S. Ishidoshiro, Y. Kawamura, Y. Hayashi
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引用次数: 1

摘要

采用射频磁控等离子体增强化学气相沉积技术在Si、SiO2和Cu衬底上合成了石墨烯。虽然石墨烯在Cu衬底上的培养时间较长,成核密度较小,但在Si和SiO2衬底上均能生长。推测其孕育时间和成核密度取决于碳前驱体在底物上的密度,即aŠected取决于碳或烃的解吸速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of Graphene by Magnetron-Plasma-Enhanced Chemical Vapor Deposition on Different Substrate Materials
Graphene was synthesized by radio-frequency magnetron-plasma-enhanced chemical vapor deposition on Si and SiO2 substrates along with on Cu substrate. Although the incubation period was longer and the nucleation density was smaller than the growth on Cu substrate, graphene was grown on Si and SiO2 substrates. It was speculated that the incubation period and nucleation density depend on the density of carbon precursor on substrate that is aŠected by the desorption speed of carbon or hydrocarbon.
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