{"title":"不同半导体材料在能量收集和节能器件中的键合","authors":"N. Shigekawa","doi":"10.3131/jvsj2.60.421","DOIUrl":null,"url":null,"abstract":"Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"62 1","pages":"421-427"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices\",\"authors\":\"N. Shigekawa\",\"doi\":\"10.3131/jvsj2.60.421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.\",\"PeriodicalId\":17344,\"journal\":{\"name\":\"Journal of The Vacuum Society of Japan\",\"volume\":\"62 1\",\"pages\":\"421-427\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of The Vacuum Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3131/jvsj2.60.421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Vacuum Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3131/jvsj2.60.421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices
Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.
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