Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)最新文献_第2页

A BCE-type a-Si TFT with an island metal masking structure 具有岛状金属掩蔽结构的bce型A - si TFT

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762762

J. Chen, T.H. Huang, Y. Chen

引用次数: 0

Ir-coated dispenser cathodes for CRTs 阴极射线管的镀镍分配器阴极

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762745

T. Higuchi, S. Matsumoto, T. Yakabe, S. Sugawara, T. Fukui

{"title":"Ir-coated dispenser cathodes for CRTs","authors":"T. Higuchi, S. Matsumoto, T. Yakabe, S. Sugawara, T. Fukui","doi":"10.1109/ASID.1999.762745","DOIUrl":"https://doi.org/10.1109/ASID.1999.762745","url":null,"abstract":"Strong demand exists for the development of high-current-density and long-life cathodes for use in CRTs. In response to this demand the authors have developed and implemented the mass production of two types of Ir-coated 411 type dispenser cathodes having a heater power of 1.31 W and 0.76 W, respectively. These cathodes were designed by computer simulation, and have a structure that allows them to be assembled in electron guns configured for conventional oxide cathodes. The following three types of life tests were carried out in order to confirm the reliability of the cathodes: (1) To investigate temperature changes during the life of the cathodes, a life test of approximately 40,000 h was conducted. The resultant temperature change was small, confirming that the reliability of the cathodes is satisfactory. (2) To investigate emission life, a 32,000 h life test was conducted. The stability of the emission current was thereby confirmed. (3) To investigate heater life, 39,000 h life tests were conducted at several heater temperature levels with a voltage of 300 V applied between the heater and the cathode. From the results of these tests, the minimum life of the heater is estimated to be 80,000 h. The results obtained in the above tests confirm that these cathodes possess good reliability.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122859576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The voltage holding ratio and DC offset voltage in the polymer stabilized homeotropically aligned liquid crystal displays 聚合物稳定同向异性排列液晶显示器的电压保持比和直流偏置电压

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762751

Hong‐Da Liu, Chingchen S. Chiu, I. Lin, C. Hsu, C. Wei, Ching-Her Chao, Hseang-Ru Chuang

引用次数: 0

A simple and high quality multigap color filter 一个简单和高品质的多间隙彩色滤光片

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762779

J. Shiu, Dai‐Liang Ting, Chung-Yung Liu, Ching-Her Chao, Hseang-Ru Chuang, Ching-Yang Chang

引用次数: 0

Recent development of liquid crystal materials for AM-LCD use 用于AM-LCD的液晶材料的最新发展

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762749

H. Numata, H. Ichinose, A. Manabe

引用次数: 0

Experimental characterization of p-channel polysilicon conductivity modulated thin-film transistors p沟道多晶硅电导率调制薄膜晶体管的实验表征

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762764

Chunxiang Zhu, J. Sin, H. Kwok

引用次数: 0

Generalized parameter space diagrams for all liquid crystal displays 所有液晶显示器的广义参数空间图

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762738

H. Kwok, J. Chen

引用次数: 1

Amorphous silicon thin film transistors formed by plasma enhanced deposition at 110/spl deg/C on transparent glass/plastic substrates 在透明玻璃/塑料衬底上以110/spl度/C等离子体增强沉积形成非晶硅薄膜晶体管

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762761

Chien-Sheng Yang

{"title":"Amorphous silicon thin film transistors formed by plasma enhanced deposition at 110/spl deg/C on transparent glass/plastic substrates","authors":"Chien-Sheng Yang","doi":"10.1109/ASID.1999.762761","DOIUrl":"https://doi.org/10.1109/ASID.1999.762761","url":null,"abstract":"This article demonstrates good quality amorphous silicon thin film transistors (TFT) fabricated with a maximum processing temperature of 110/spl deg/C on glass or flexible transparent plastic substrates, using rf plasma enhanced chemical vapor deposition. Hydrogen diluted silane was used for the preparation of the amorphous silicon (a-Si), while SiH/sub 4//NH/sub 3//N/sub 2/ or SiH/sub 4//NH/sub 3//N/sub 2//H/sub 2/ mixtures were used for the preparation of silicon nitride (SiN/sub x/) films. Gate and source/drain metal was sputter deposited molybdenum. Plastic substrates were indium tin oxide (ITO) coated polyethylene terephthalate (PET). Transistors formed, using the same processes, on glass and plastic show linear mobilities of 0.33 and 0.12 cm/sup 2//Vs, respectively, with I/sub ON/I/sub OFF/ ratios greater than 10/sup 6/. For transistors on glass, the achieved highest linear mobility is 0.54 cm/sup 2//Vs. The stability of transistors was characterized using electrical stress measurements. The threshold voltage shift is 5.0 volt for a typical transistor on glass substrate, using a stress condition of Vg=25 volt, 600 seconds. Without applying electrical stresses, threshold voltages and linear mobilities of all transistors were found to increase with storage time. We suggest that the relaxation of the interface (SiN/sub x//a-Si) through the bond breaking of the weakest Si-Si bonds contributes to the observation.","PeriodicalId":170859,"journal":{"name":"Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126084475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pigment-dispersed color resist with high resolution for advanced color filter application 高分辨率色散抗蚀剂，适用于高级滤色器应用

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762781

Rong-Jer Lee, Jr-Cheng Fan, Tzong-Shing Cheng, Jung-Lung Wu

引用次数: 2

Evaluation of residual DC of LC cell LC电池剩余直流电的评价

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI: 10.1109/ASID.1999.762750

Y. Nakazono, T. Takagi, A. Sawada, S. Naemura

引用次数: 1