具有岛状金属掩蔽结构的bce型A - si TFT

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-19 DOI:10.1109/ASID.1999.762762

J. Chen, T.H. Huang, Y. Chen

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引用次数: 0

摘要

提出并制作了一种具有岛状金属掩蔽结构的反沟道蚀刻氢化薄膜晶体管(TFT)器件。TFT结构包含了SiN/sub x//a- si /n+a- si /metal的连续层沉积过程，最终在源/漏金属和岛屿之间形成额外的金属层。通道金属同时蚀刻在S/D金属掩模图样中。结果表明，新设计的TFT器件具有以下特点:(1)良好的S/D金属/n+a-Si接触;(2)在处理过程中防止等离子体损伤，特别是在氧等离子体灰化过程中;(3)无需额外的掩膜。这些优点将有助于在大面积量产a- si TFT制造中扩大工艺窗口范围。

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A BCE-type a-Si TFT with an island metal masking structure

A new back channel etched hydrogenated thin film transistor (TFT) device with an island metal masking structure has been proposed and fabricated. The TFT structure contained a continuous layer deposition process of SiN/sub x//a-Si/n+a-Si/metal, and finally resulted in an additional metal layer between source/drain metals and islands. The channel metal was etched in the S/D metal mask patterning simultaneously. Results showed the newly designed TFT device exhibiting some characteristics: (i) good S/D metal/n+a-Si contact, (ii) prevention of plasma damage during processing especially for oxygen plasma ashing and (iii) without additional mask. These advantages will be helpful for a wider range of process window in large area mass production a-Si TFT fabrications.

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Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

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