Proceedings of Japan International Electronic Manufacturing Technology Symposium最新文献

{"title":"Joint Of High Tc Superconductor With Low Loss And High Strength","authors":"N. Suzuki, O. Ishii, O. Michikami","doi":"10.1109/IEMT.1993.639755","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639755","url":null,"abstract":"A new method for joining Bi2Sr2Ca2Cu30w superconductors (BSCCO) is studied, which realizes low microwave loss and high mechanical strength. This method is characterized by Ag-metallizing and the use of Ag paste. In a joint formed using this method, we measured a loss of 0.3 dB around 1.1 GHz with the co-axial cavity method. Moreover, the mechanical strength of the joint was greater than that of the BSCCO. This good performance is attributed, on the basis of SEM and EPMA observations, to the adhesion of the Ag which is metallized to the BSCCO.","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133964441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Degradation Of Tab Outer Lead Contacts Due To The Au Concentration In Eutectic Tin/lead Solder","authors":"E. Zakel, G. Azdasht, H. Reich","doi":"10.1109/IEMT.1993.639790","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639790","url":null,"abstract":"The influence of the Au-concentration in OLB-solder fillets on the contact reliability is shown. The quantitative analysis of the AUcontent is in accordance with the estimated concentrations using the geometrical data. The Au-concentration is the major influence factor on the thermal aging behaviour of OLB-contacts. A change in the failure mechanism due to Kirkendall porosity is observed if a AUconcentration of 9 wt% in the solder fillet is reached. The pores formed during diffusion at the interface between copper and the temary intermetallic compound CugAugSng cause a strong degradation of pull forces. For low Au-concentrations. the degradation of pull-forces and the growth of the ternary compounds CuAugSng and CuAuqSng have comparable activation energies in the range of 0.3 eV. For higher Au-concentrations the two effects show different values. \"he activation energy of pull-force degradation increases significantly up to 0.67 eV, whereas the growth constant of the temary compound shows a small increase to 0.4 eV. The investigations show evidence of a critical Au-concentration in OLBcontacts. Kirkendall pore formation causes higher activation energies for the pull-test degradation compared to the activation energy for the growth rate of the temary compound.","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132124995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2-d Measuring Fiber-optic Network","authors":"Y. Kulchin, O. B. Vitrlk, O. Kirichenko","doi":"10.1109/IEMT.1993.639769","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639769","url":null,"abstract":"Today mu1 t idimensional signal processing (EP) methods is of great interest. Tomography rinciples of data obtaining and process 9 ng can be very useful for like fiber-optic measuri network for distribution functions reconstruction is suggested. Network performances, reconstruction accuracyI reconstruction rocedure re uirements are discussed and ! ested gested network is made and tested. with theoretical predictions. these methods. A distribute tomographymultidimensional physical Y elds parameter","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132862655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shaping And Coupling Of Optical Thick Film Waveguides","authors":"Z. Keresztes‐Nagy, G. Harsany","doi":"10.1109/IEMT.1993.639768","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639768","url":null,"abstract":"SUMMARY In the last few years a lot of new types light-guiding optical film structures have been developed. Many applications have become published in the field optical and optoelectronical integrated circuits, sensor-elements, etc. The basic component of these systems is the optical waveguide which can be realized with optical fibers or fabricated as a layer structure from different dielectrics and many kinds of glasses [I] [2]. The purpose of this article is to describe some problems and solutions of optical waveguide thick film manufacturing and also connecting techniques with optical fibers.","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133364621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development Of Thick Film Resistors Co-fireable With Ceramic Substrate","authors":"R. Kondo, Y. Suzuki, H. Tsuyuki","doi":"10.1109/IEMT.1993.639346","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639346","url":null,"abstract":"s A Thicl-Film-Resistor-sS.steni cofireable with ceramic substrate is developed Resistors , electrodes and ceramic substrate are sintered at 900T under air atmosphere The resistors are composite of Ru-based pyrochlore, glass and some additives The electrodes are composite of Ag and glass The substrate is composite of a-Alumina and glass Effects caused by cofiring such as reaction between resistor film and Ag-electrode were sufficiently reduced Electrical linearity of the resistor related to chemical properties of Ru-pyrochlores and glass are also discussed T a b l e 1. Character is t ics of Cofi reable Resistor *Normalized to size of lmm2 and lkRisq 1. I n t r o d u c t i o n Recently low-temperature-firing-ceramic (LTFC) substrates are rapidly spreading there applications TDK CO have already developed LTFC multi-layered-substrate for high density hybrid ICs This system is made of a substrate composed of a-Alumina and SrO-SiO,-B,O,-glass w t h high mechanical strength and low dielectric constant, and Agconductor of low electrical resistivity To improve abilities and density of these hybrid ICs, we newly developed cofireable resistor system that features # Embedding resistors in LTFC substrate reduces size of # One-time firing decreases production costs # Electrical characteristics such as TCR(Temperature Constant of Resistance), VCR(Vo1tage Constant of Resistance), Noise-Index are equivalent to usual resistor system fired on alumina substrates The resistor system consists of two kind of compositions CFR-I series supports resistance lower than 3kRisq and CFR-2 series supports resistance higher than IkRisq Main conductive phase is Bi,Ru,O, for CFR-I, and Pb,Ru,O,, for CFR-2 respectively VCR parameters are measured thiough two stages w t h a resistance bridge At first stage, a tenth of rated-vo1tag.e I S applied to the resistor At second stage, ratedvoltage is applied The VCR wll be calculated as follows hybrid ICs V, Rated Voltage (Volt) R, Resistance under applying rated-voltage R, Resistance under applying 0 Ixrated-voltage Noise-Index are measured by QuanTech 3 15B Noise meter. TCR are measured from -50OC to +125OC. Ru-Pyrochlore -Glass-frit ---Additives Ceramic Green Tap= Punching Through-holes","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116668890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conditions For Reliable Ball-wedge Copper Wire Bonding","authors":"J. Caers, A. Bischoff, J. Falk, J. Roggen","doi":"10.1109/IEMT.1993.639786","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639786","url":null,"abstract":"","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122233732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Superminiaturized Leadless Double-em-awed Mixer-modulator With Thick Film Print /fire Process","authors":"M. Ohsawa, Y. Ando, Y. Arai, T. Wada, M. A. Stein","doi":"10.1109/IEMT.1993.639734","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639734","url":null,"abstract":"A Supern in ia tu r i zed doublebalanced mixermodulator(D8H) by t h i c k f i lm techno logy has been developed,in which a couple o f phase transformers w i t h t h i c k f i l m conductor and d i e l e c t r i c m a t e r i a l s a r e connected t o a quad-diode chip.0ptimization o f the width o f a th ick f i l m coi1,the d ie lec t r i c constant and thickness o f d i e i e c t r i c layers between the c o i l s made DBMs t o work a t 0.9.1.5 and 1.9GHz band respect ively. 1 . In t roduc t ion As the s i z e r e d u c t i o n and accuracy o f movable communica t ion equ ipment ,such as a handy phone , i s improved,a vigorous e f f o r t i s being made t o min ia tu r ize e lec t ron i c components such as a double-balanced mixeraodulator(DBH1 with h igher accuracy t o be used i n t h e equipment. A conventional mixer-modulator has consisted o f a phase t rans former made o f a f e r r i t e core and t h e technique o f wire bonding, We have developed a leadless double-balanced mixersodulator(D8M) f o r Surface Mount Technology which i s realized by a piair o f phase transformers with multilayered co i l s o f th ick film. We investigated the optimal width and length of a prlnted/fired co i l and the th ickness/perai t iv i ty o f i n s u l a t e d l a y e r s between t h e c o i l s , t o c r e a t e a t r a n s f o r m e r w o r k i n g a t t h e f r e q u e n c y b a n d o f 0.9.1.5,or1.9GHlz. The size o f the DBW i s compact as 5.0 x 4.5 x Z.O(ma) and i t s conversion l oss i s 7 o r 8 dB and i n t e r c e p t point(1P) i s 8 o r 10 dB respec t i ve l y . 2.Method o f experiment 3-1. Basic conf igura t ion o f Phase transformer An equivalent c i r c u i t o f the DBH i s shown i n Figure 1 Thick film p r i n t / f i r e process i s used t o f o r i c o i l s f o r a phase transformer as shown i n the schematic o f Figure 2 F i r s t g o l d pas te i s p r i n t e d and fired(850.C) on t h e alumina(96X) substrate t o form the pa i r o f c o i l s o f 7-b and 6-d i n Figure 2-a, followed by p r in t i ng and fir ing(850' C) of d ie lec t r i c layer . The process i s repeated, i n order o f 1-8,4-5(Figure 2-b) and 2-a and J-c(Figure 2-c) t o cons t ruc t t he phase t rans former . f i g u r e 2-d shows a schematic cross sec t ion o f the p r i n t e d and f i r e d phase transformer. 'The F igure a l s o i nd i ca tes connections t o diodes. Each e lec t rode o f lead less quad-diode w i t h a forward voltage, Vf=O.ZV. i s wire-bonded t o complete the DBM. I n the exiierinent, we investigated (a) the width and length o f the conductor trace t o form a c o i l and (b) the th i ckness and p e r m i t i v i t y o f i n s u l a t i n g d i e l e c t r i c layer between c o i l s .","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125152850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fail Bit Analysis System For Semiconductor Memory Wafers","authors":"S. Ishikawa, K. Ishihara, Y. Miyamot, I. Miyazki, T. Ohshikk, M. Sato","doi":"10.1109/IEMT.1993.639772","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639772","url":null,"abstract":"The fail bit data analysis system was developed to shorten the defect analysis time for semiconductor memory products. The system has the following features: (])Feature elicidation by display of wafer scale and detailed analysis by expansion function. (2)Display of fail bit distribution based on design data and transfer of coodinate data to SEM. (3)Data storage by data compression. 1 .Problem Areas in Fail Bit Analysis The analysis of fail bit distribution in semiconductor memory is effective in specifying structural defects in memory-mats and their surrounding circuits. For example,when the fail bits are in a line in the memory -mat as shown in Fig.], a problem in the data read circuit in the horizontal direction is clear.However,the following problems exist in actually implementing fail bit analysis. memory chip","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129122300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stress Analysis On Hybrid Multilayer Substrate Composed Of Polyimide And Ceramics","authors":"H. Arima, E. Sotokawa, R. Sate, F. Shoji, H. Shigi, T. Hatsuta","doi":"10.1109/IEMT.1993.639770","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639770","url":null,"abstract":"The mechanical characteristics of thin film multilayer circuits ire investigated by stress analysis based on experiments. The warping and separation of the film from the substrate is observed experimentally by repeatedly depositing polyimide films on the substrate, revealing the relationship between film thickness and stress in the film. To simulate the stress, we estimated the mechanical properties from the warpings of the films on the substrates. substrate is a quadratic function of the film thickness deposited on it, just as for a bi-metal. The maximum thickness of thin film that will not peel off from the substrate can be estimated from this relationship. The warping of the","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130512436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A For 3D Assembly Simulation System Parts With Geometric Deviations","authors":"K. Inoue, A. Okano","doi":"10.1109/IEMT.1993.639803","DOIUrl":"https://doi.org/10.1109/IEMT.1993.639803","url":null,"abstract":"2. Virtually assemble those deviant components and resolve their relative positions. Current CAD systems andperipheml so f twae can handle solid models. However, a solid model reflects only one aspect of a component’s geometry, that is, its ideal (or nominal) shape. For tolemnce analysis, component models should allow geometric deviations. In this paper we propose a deviant component model, which consists of (1) a solid model and (2) deviations of surfaces at selected points. Given such a deviant component model, the relative positions of fitted parts aw calculated b y using linear piogramniing, which uses an objective function derived f rom the attachment co.nditions. Design variables’ values and ranges are also estimated.","PeriodicalId":170695,"journal":{"name":"Proceedings of Japan International Electronic Manufacturing Technology Symposium","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127311864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}