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International Conference on Extreme Ultraviolet Lithography 2021最新文献

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Front Matter: Volume 11854 封面:第11854卷
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-10-22 DOI: 10.1117/12.2617273
{"title":"Front Matter: Volume 11854","authors":"","doi":"10.1117/12.2617273","DOIUrl":"https://doi.org/10.1117/12.2617273","url":null,"abstract":"","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126418149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photochemical study of metal infiltrated e-beam resist using vapor-phase infiltration for EUV applications 金属渗透电子束抗蚀剂的气相渗透光化学研究
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-30 DOI: 10.1117/12.2601033
S. Hwang, Aditya Raja Gummadavelly, Dan N. Le, Y. Jung, J. Veyan, Nikhil Tiwale, C. Nam, Jinho Ahn, Jiyoung Kim
{"title":"Photochemical study of metal infiltrated e-beam resist using vapor-phase infiltration for EUV applications","authors":"S. Hwang, Aditya Raja Gummadavelly, Dan N. Le, Y. Jung, J. Veyan, Nikhil Tiwale, C. Nam, Jinho Ahn, Jiyoung Kim","doi":"10.1117/12.2601033","DOIUrl":"https://doi.org/10.1117/12.2601033","url":null,"abstract":"Significant efforts have been dedicated to the development of inorganic-organic hybrid materials for next-generation EUV resists. Among the various synthesis, vapor-phase infiltration of metal source into existing e-beam photoresists using ALD process has drawn great attention. In this work, we have demonstrated the vapor-phase infiltration of both Hf and Al precursors into PMMA and HSQ resists, respectively. For example, under the electron exposure with 100 eV, both hybrid resists show relatively higher EUV absorption, increasing positive and negative tone. The detailed photochemical reactions of on electron exposure were investigated using an in-situ FTIR equipped with electron gun capability.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127910187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-brightness LDP EUV source for EUV mask inspection 用于EUV掩模检测的高亮度LDP EUV源
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-30 DOI: 10.1117/12.2600974
N. Ashizawa, Y. Sato, H. Watanabe, Y. Teramoto, T. Shirai, S. Morimoto, Hironobu Yabuya, Kazuya Aoki, D. Yajima, A. Nagano
{"title":"High-brightness LDP EUV source for EUV mask inspection","authors":"N. Ashizawa, Y. Sato, H. Watanabe, Y. Teramoto, T. Shirai, S. Morimoto, Hironobu Yabuya, Kazuya Aoki, D. Yajima, A. Nagano","doi":"10.1117/12.2600974","DOIUrl":"https://doi.org/10.1117/12.2600974","url":null,"abstract":"The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and beamline application and deployed in the field. LDP EUV source enables to generate high brightness with relatively larger EUV plasma by discharged plasma triggered by laser on one electrode disc which is coated by tin film. \u0000As EUVL process is used more in mass-production process, the requirement for EUV source for mask inspection is required more. USHIO LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121184787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Demonstration of proof of concept of the EUV-FEL for future lithography 用于未来光刻的EUV-FEL的概念验证演示
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-30 DOI: 10.1117/12.2600782
N. Nakamura, Ryokou Kato, H. Sakai, K. Tsuchiya, Y. Tanimoto, Y. Honda, T. Miyajima, M. Shimada, T. Obina, H. Kawata
{"title":"Demonstration of proof of concept of the EUV-FEL for future lithography","authors":"N. Nakamura, Ryokou Kato, H. Sakai, K. Tsuchiya, Y. Tanimoto, Y. Honda, T. Miyajima, M. Shimada, T. Obina, H. Kawata","doi":"10.1117/12.2600782","DOIUrl":"https://doi.org/10.1117/12.2600782","url":null,"abstract":"An ERL(energy recovery linac)-based EUV-FEL can provide EUV power of more than 1 kW for multiple scanners to overcome stochastic noise and to achieve higher throughput. An IR-FEL project started at the KEK cERL for the purpose of developing high-power IR lasers for high-efficiency laser processing, and it can demonstrate proof of concept of the EUV-FEL for future lithography. We will briefly review the EUV-FEL and present construction and commissioning of the cERL IR-FEL including future work.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131034171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance and availability of EUV Sources in high volume manufacturing on multiple nodes in the field and advances in source power EUV光源在多节点大批量生产中的性能和可用性以及光源功率的进展
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-30 DOI: 10.1117/12.2601822
D. Brandt, I. Fomenkov, Matthew Graham
{"title":"Performance and availability of EUV Sources in high volume manufacturing on multiple nodes in the field and advances in source power","authors":"D. Brandt, I. Fomenkov, Matthew Graham","doi":"10.1117/12.2601822","DOIUrl":"https://doi.org/10.1117/12.2601822","url":null,"abstract":"Over 85 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W with 92% availability, while meeting all performance requirements. Future EUV scanners are projected to require even higher power to meet throughput requirements. \u0000 \u0000In this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems designed for critical source functions such as collector protection and continuous tin droplet supply.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"426 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133631157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Progress in EUV resist screening by interference lithography for high-NA lithography 干涉光刻技术在高na光刻中的EUV抗蚀剂筛选研究进展
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-29 DOI: 10.1117/12.2600963
T. Allenet, M. Vockenhuber, C. Yeh, J. Santaclara, Lidia van Lent-Protasova, Y. Ekinci
{"title":"Progress in EUV resist screening by interference lithography for high-NA lithography","authors":"T. Allenet, M. Vockenhuber, C. Yeh, J. Santaclara, Lidia van Lent-Protasova, Y. Ekinci","doi":"10.1117/12.2600963","DOIUrl":"https://doi.org/10.1117/12.2600963","url":null,"abstract":"The development of photoresists is crucial for the progress in lithographic technologies and integrated circuit altogether. For instance, the development of novel EUV resists is a critical enabler of future technology nodes, particularly towards the deployment of high-NA EUV lithography into high-volume manufacturing. Within the scope of a joint resist screening program between PSI and ASML, the development of EUV resists is investigated using EUV interference lithography. In this work, we provide a review of the recent progress in EUV resists by considering several resist platforms provided by different vendors. Lines/spaces patterning is extensively investigated as a function of film processing parameters. The challenge in developing resists is admittedly governed by a resolution-roughness-sensitivity (RLS) performance tradeoff, therefore performance results are presented with critical dimension (CD), dose-to-size (DtS), line-width-roughness (LWR) as well as the z-factor metric associated to the RLS tradeoff. We consider LS patterning between 16 and 13 nm half-pitch to identify materials matching current high-volume manufacturing specifications. We then investigate high-resolution resists for patterning down to 8 nm half-pitch, therefore potential candidates for high-NA EUVL. Further process optimization perspectives are finally discussed towards enabling future technology nodes.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130752153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A new generation EUV pellicle to enable future EUV lithographic nodes at enhanced productivity 新一代EUV光刻膜，使未来的EUV光刻节点提高生产率
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-29 DOI: 10.1117/12.2600854
G. Salmaso, R. Maas
{"title":"A new generation EUV pellicle to enable future EUV lithographic nodes at enhanced productivity","authors":"G. Salmaso, R. Maas","doi":"10.1117/12.2600854","DOIUrl":"https://doi.org/10.1117/12.2600854","url":null,"abstract":"With EUV lithography now a stable part of the chip Industry production processes, the attention and demand for higher productivity is more pressing than ever. To support customers' demands, ASML has developed the next generation EUV pellicle, increasing the EUV transmittance and lifetime standards. Thanks to its unparalleled performance, the new generation pellicle boosts the scanner productivity more than 20% compared to the previous one.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121566659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Advances in component synthesis leading to performance improvements for multi-trigger resist 元件合成的进步导致多触发电阻性能的提高
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-29 DOI: 10.1117/12.2600966
C. Popescu, G. O'Callaghan, A. McClelland, J. Roth, Edward A. Jackson, Philipp H. Fackler, R. Dammel, M. Moinpour, Kun Si, A. Robinson
{"title":"Advances in component synthesis leading to performance improvements for multi-trigger resist","authors":"C. Popescu, G. O'Callaghan, A. McClelland, J. Roth, Edward A. Jackson, Philipp H. Fackler, R. Dammel, M. Moinpour, Kun Si, A. Robinson","doi":"10.1117/12.2600966","DOIUrl":"https://doi.org/10.1117/12.2600966","url":null,"abstract":"","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116665447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New idealized designs for the EUV photomask EUV光罩的新理想设计
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-29 DOI: 10.1117/12.2600901
S. Jaiswal
{"title":"New idealized designs for the EUV photomask","authors":"S. Jaiswal","doi":"10.1117/12.2600901","DOIUrl":"https://doi.org/10.1117/12.2600901","url":null,"abstract":"","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133817401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Value of EUV lithography for DRAM manufacturing EUV光刻技术在DRAM制造中的价值
International Conference on Extreme Ultraviolet Lithography 2021 Pub Date : 2021-09-29 DOI: 10.1117/12.2605763
Chang-moon Lim
{"title":"Value of EUV lithography for DRAM manufacturing","authors":"Chang-moon Lim","doi":"10.1117/12.2605763","DOIUrl":"https://doi.org/10.1117/12.2605763","url":null,"abstract":"It seems like EUV is at the center stage of semiconductor industry nowadays. Several leading companies has already established manufacturing foothold on EUV and add the number of equipment steadily where double-digit number of tools are already operational in their realm. Mostly logic and foundry sectors have moved earlier for EUV high volume manufacturing but memory makers are also following suit. In the presentation, it will be reviewed what specific aspects has differentiated the memory sector from logic and foundry in view of EUV adoption. The value of EUV lithography by comparing that of ArF immersion based multiple patterning techniques will be examined. It will be also touched on the current status and future extendibility of EUV lithography in view of DRAM manufacturing will be briefly addressed also.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130043389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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