Performance and availability of EUV Sources in high volume manufacturing on multiple nodes in the field and advances in source power

Abstract

Over 85 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W with 92% availability, while meeting all performance requirements. Future EUV scanners are projected to require even higher power to meet throughput requirements. In this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems designed for critical source functions such as collector protection and continuous tin droplet supply.