{"title":"EUV光源在多节点大批量生产中的性能和可用性以及光源功率的进展","authors":"D. Brandt, I. Fomenkov, Matthew Graham","doi":"10.1117/12.2601822","DOIUrl":null,"url":null,"abstract":"Over 85 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W with 92% availability, while meeting all performance requirements. Future EUV scanners are projected to require even higher power to meet throughput requirements. \n \nIn this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems designed for critical source functions such as collector protection and continuous tin droplet supply.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"426 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance and availability of EUV Sources in high volume manufacturing on multiple nodes in the field and advances in source power\",\"authors\":\"D. Brandt, I. Fomenkov, Matthew Graham\",\"doi\":\"10.1117/12.2601822\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Over 85 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W with 92% availability, while meeting all performance requirements. Future EUV scanners are projected to require even higher power to meet throughput requirements. \\n \\nIn this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems designed for critical source functions such as collector protection and continuous tin droplet supply.\",\"PeriodicalId\":169926,\"journal\":{\"name\":\"International Conference on Extreme Ultraviolet Lithography 2021\",\"volume\":\"426 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Extreme Ultraviolet Lithography 2021\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2601822\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Extreme Ultraviolet Lithography 2021","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2601822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance and availability of EUV Sources in high volume manufacturing on multiple nodes in the field and advances in source power
Over 85 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W with 92% availability, while meeting all performance requirements. Future EUV scanners are projected to require even higher power to meet throughput requirements.
In this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems designed for critical source functions such as collector protection and continuous tin droplet supply.
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