International Conference on Extreme Ultraviolet Lithography 2021最新文献

{"title":"Patterning performance with main chain scission type photoresist for EUV lithography","authors":"A. Shirotori, M. Hoshino, D. D. Simone, G. Vandenberghe, Hirokazu Matsumoto","doi":"10.1117/12.2600855","DOIUrl":"https://doi.org/10.1117/12.2600855","url":null,"abstract":"Zeon developed ZER02#04 resists with main chain scission reaction to enhance patterning performance for EUVL. This presentation focuses on the patterning performance of contact hole patterns with ZER02#04DM at ADI and AEI. \u0000For example, at P40nm orthogonal C/H in ADI, the resolution at 17.5 nm in hole CD was achieved at the exposure dose of 76 mJ/cm2, giving a LCDU of 2.77 nm. And it could transfer P40nm orthogonal C/H patterns to SiO2 by etching. The LCDU in AEI was enhanced at 2.47 nm. Additionally, the results with novel resist for next generation plan to be introduced at my presentation.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129106516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stochastic effects in chemically amplified resists used for extreme ultraviolet lithography","authors":"T. Kozawa","doi":"10.1117/12.2601798","DOIUrl":"https://doi.org/10.1117/12.2601798","url":null,"abstract":"","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117159289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pathfinding the perfect EUV mask: understanding the EUV mask using the hybrid mask model","authors":"H. Mesilhy, P. Evanschitzky, G. Bottiglieri, E. V. Setten, C. V. Lare, Tim Brunner, M. V. D. Kerkhof, A. Erdmann","doi":"10.1117/12.2601243","DOIUrl":"https://doi.org/10.1117/12.2601243","url":null,"abstract":"","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129884466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From omelet lithography to state-of-the-art performance resists: resist screening with EUV Interference Lithography","authors":"T. Allenet, Thomas Mortelmans, M. Vockenhuber, C. Yeh, Y. Ekinci","doi":"10.1117/12.2600920","DOIUrl":"https://doi.org/10.1117/12.2600920","url":null,"abstract":"","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122425805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure","authors":"Arnaud Dauendorffer, Onitsuka Tomoya, H. Tadatomo, Keisuke Yoshida, T. Shiozawa, Genjima Hisashi, Noriaki Nagamine, Y. Kamei, Soichiro Okada, S. Kawakami, M. Muramatsu, S. Shimura, K. Nafus, N. Oikawa, Y. Feurprier, M. Demand, A. R. Negreira, S. Nagahara, Dinh Congque, L. Kljucar, D. D. Simone, P. Foubert","doi":"10.1117/12.2600860","DOIUrl":"https://doi.org/10.1117/12.2600860","url":null,"abstract":"EUV (extreme ultraviolet) lithography is progressively being inserted in high volume manufacturing of semiconductors to keep up with node shrinkage. However, defectivity remains one big challenge to address in order to be able to exploit its full potential. As in any type of lithographic process, processing failures and in-film particles are contributors that need to be reduced by the optimization of coating and development processes and improved dispense systems. On top of these defects, stochastic failures, due to photon shot noise or non-uniformities in the resist, are another major contribution to the defectivity. To support their mitigation, etch process can be used to avoid their transfer to underlying layers. However, it requires a sufficient resist mask thickness. For line and space patterns, providing more resist budget comes with a trade-off which is the increase of pattern collapse failures, especially with shrinking critical dimensions. Collapse mitigation approaches are therefore very important to enable tight pitches and were explored. Stack engineering and especially optimization of resist under layers will be crucial components to enable patterning and defect reduction of shrinking pitches. Finally, as an alternative to traditional chemically amplified resists, metal containing resists are also promising because of their inherent high etch resistance. Dedicated hardware and processes were developed the use of such materials and prevent metal contamination to other tools during further processing steps.\u0000In this report will be presented the latest solutions to further decrease defectivity towards manufacturable levels and provide more process margin to achieve better quality patterning towards the limits of NA 0.33 EUV exposure. Furthermore, technologies to improve CD uniformity and stability, which are required for mass production, will also be reported.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127702220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coater/developer and new underlayer application to sub-30nm process","authors":"Kanzo Kato, N. Shibata, L. Huli, D. Hetzer, Angélique Raley, Chris Cole, Alexandra Krawicz, S. Shimura, S. Kawakami, Soichiro Okada, T. Kitano, Akihiro Sonoda, K. Petrillo, Luciana Meli, Cody Murray, A. Hubbard","doi":"10.1117/12.2602829","DOIUrl":"https://doi.org/10.1117/12.2602829","url":null,"abstract":"As the industry continues to push the limits of integrated circuit fabrication, reliance on EUV lithography has increased. Additionally, it has become clear that new techniques and methods are needed to mitigate pattern defectivity and roughness at Litho and Etch together with eliminating film-related defects. \u0000These approaches require further improvements to the process chemicals and the lithography process equipment to achieve finer patterns. \u0000In particular improvements in the coater/developer hardware and process are required to enable the use of a wide variety of chemicals as well as compatibility with existing systems. \u0000This paper reviews the ongoing progress in coater/developer processes that are required to enable EUV patterning sub-30nm line and space by using MOR (Metal Oxide Resist).","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126227260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Contour-based variability decomposition for stochastic band metrology","authors":"I. WallowThomas, Jiyou Fu, Jiao Liang, Jen-Shiang Wang, Jimmy Fan, M. Delorme, Changan Wang, Fahong Li, V. Jain, Rui Yuan","doi":"10.1117/12.2601587","DOIUrl":"https://doi.org/10.1117/12.2601587","url":null,"abstract":"Driving down imaging-induced edge placement error (EPE) is a key enabler of semiconductor technology node scaling1-3. From the 5 nm node forward, stochastic edge placement error (SEPE) is predicted to become the biggest contributor to total edge placement error. Many previous studies have established that LER, LCDU, and similar variability measurements require corrections for metrology artifacts and noise as well as mask variability transfer to more accurately represent wafer-level stochastic variability. In this presentation, we will discuss SEPE band behavior based on a methodology that allows local extraction of SEPE from total measured local variability (LEPU) in a generalized way along 2D contours.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127286601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TEUS: high-brightness EUV LPP light source based on fast rotating target: product overview and specifications","authors":"M. Krivokorytov, K. Koshelev, A. Vinokhodov, O. Yakushev, V. Ivanov, V. Krivtsun, A. Lash, V. Medvedev, V. Gubarev, D. Glushkov, S. Ellwi, E. Gorsky, Alexey A. Kiselev","doi":"10.1117/12.2601008","DOIUrl":"https://doi.org/10.1117/12.2601008","url":null,"abstract":"We present performance metrics for the commercially available TEUS product line. TEUS-S is a high-brightness EUV LPP light source based on a fast rotating liquid metal target with EUV collection angle of 0.05sr. The TEUS-S100 and S400 models employing 100W and 400W of average laser power respectively have been characterized wi0th particular attention to the collector optics lifetime. It is estimated that 10% mirror reflectivity degradation will occur after 2 years for the TEUS-S100 and after 0.5 year for the TEUS-S400 in 24/7operation mode. \u0000The TEUS-S400 source provides more than 30 mW of in-band (±1%) EUV radiation after the debris mitigation system.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124343719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High NA EUV optics: preparing lithography for the next big step","authors":"Paul Graeupner, Peter Kuerz, J. V. Schoot, J. Stoeldraijer","doi":"10.1117/12.2600962","DOIUrl":"https://doi.org/10.1117/12.2600962","url":null,"abstract":"To further increase the resolution of EUV scanners ZEISS is working on next generation EUV optics with an increased NA of 0.55. This next generation optics consists of a highly flexible illumination system and projection optics with NA 0.55 to allow scaling beyond the next decade. \u0000In this presentation we will present the status of the high-NA optics program at ZEISS. We report on the high NA infrastructure including mirror polishing, coating, surface figure metrology, mirror handling, and integration tooling. Progress in manufacturing of mechanics, frames and mirrors at ZEISS for both illuminator and POB will be shown.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"11 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131289349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of atomic processes of multiple charged ions for their application to the EUV source","authors":"A. Sasaki","doi":"10.1117/12.2600905","DOIUrl":"https://doi.org/10.1117/12.2600905","url":null,"abstract":"We investigate atomic structure and atomic processes of Sn and heavier elements for present and future extension of EUV source. We investigate experimental and theoretical spectrum to identify the average wavelength, width and strength of combined 4d-4f and 4p-4d transition arrays from which intense EUV emission is obtained. We investigate the spectrum taking the effect configuration interaction (CI), as well as the effect of emission from multiply and inner-shell excited states. We will discuss data driven approaches, with that fast and accurate methods to predict spectral property of the plasma is explored.","PeriodicalId":169926,"journal":{"name":"International Conference on Extreme Ultraviolet Lithography 2021","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128726145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}