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2022 IEEE 5th International Conference on Electronics Technology (ICET)最新文献

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Thermal Management of High Power GaN MMIC on Silicon with Microjet Impingement Cooling 基于微射流冲击冷却的硅基高功率GaN MMIC热管理
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9824341
Miao Yu, Tongsheng Zuo, Min Huang, Jian Zhu
{"title":"Thermal Management of High Power GaN MMIC on Silicon with Microjet Impingement Cooling","authors":"Miao Yu, Tongsheng Zuo, Min Huang, Jian Zhu","doi":"10.1109/icet55676.2022.9824341","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9824341","url":null,"abstract":"A high power GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA) integrated on a silicon interposer with microjet impingement cooling is presented in this work. A Si interposer and a test cube for coolant supply were designed using computational fluid dynamics (CFD) method. The GaN MMIC is a 3-stage PA, and it was integrated on the interposer then assembled in the test cube. The microjets were arranged beneath the $3^{mathrm{r}mathrm{d}}$ stage transistors of PA to increase the heat transfer efficiency. The fluidic parameters of deionized (DI) water circulation, electrical and thermal characteristics of the chip were monitored in a cooling test platform. The hotspot power density at the junctions achieved 416.5 $mathrm{W}/mathrm{m}mathrm{m}^{2}$ and the average heat flux of the chip was up to $53mathrm{S}.9mathrm{W}/mathrm{c}mathrm{m}^{2}$. The maximum junction temperature of GaN PA maintained at 158. $2^{circ}mathrm{C}$ at $70^{circ}mathrm{C}$ atmosphere temperature with the pressure drop of $sim$270kPa at the flow rate of $sim 500displaystyle mathrm{m}mathrm{L}/min$. The implementation results have demonstrated that microjet impingement cooling is an effective and practical solution for high power hetero-integration on silicon substrate.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128106044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Broadband Dielectric-Loaded Horn Antenna with Enhanced Gain for 1-18 GHz EMC Applications 1-18 GHz电磁兼容应用中增益增强的宽带介质负载喇叭天线
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9824523
Yuan Zhang, Dongjun Wang, Lewu Deng, Lei Zhang, Xuedi Yuan, Yu Long
{"title":"Broadband Dielectric-Loaded Horn Antenna with Enhanced Gain for 1-18 GHz EMC Applications","authors":"Yuan Zhang, Dongjun Wang, Lewu Deng, Lei Zhang, Xuedi Yuan, Yu Long","doi":"10.1109/icet55676.2022.9824523","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9824523","url":null,"abstract":"Dual ridged waveguide horn antennas (DRGH) are widely used in antennas and EMC testing systems as feeder and standard antennas respectively. However, traditional 1-18 GHz DRGH antennas have beam splitting above 12GHz. In this paper, not only the waveguide section and the ridge curve are optimized, and the higher order modes is eliminated, but also the phase distribution of the DRGH antenna interface is further optimized by Dielectric-Loaded to improving the antenna aperture efficiency. The final design of the DRGH antenna size is 242mm×136 mm×189 mm, the gain is 7.16 dBi at 1 GHz, 16 dBi at 9.5 GHz, 19.5 dBi at 18 GHz.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115848568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Receiver System Design for Universal Polyphase DFT Digital Channelization Algorithm 通用多相DFT数字信道化算法接收机系统设计
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9825105
Shihang Lu, Zhengyu Su, Kaisheng Liao, C. Li, Zhuoling Xiao, Bo Yan, Shuisheng Lin, Bo Wu
{"title":"Receiver System Design for Universal Polyphase DFT Digital Channelization Algorithm","authors":"Shihang Lu, Zhengyu Su, Kaisheng Liao, C. Li, Zhuoling Xiao, Bo Yan, Shuisheng Lin, Bo Wu","doi":"10.1109/icet55676.2022.9825105","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9825105","url":null,"abstract":"Receiver plays a vital role in various electronic countermeasure systems and has always been a hot topic to research. Based on the traditional receiver digital channelization structure, this paper further researches and derives the high-efficiency digital channelization structure based on polyphase discrete Fourier transform corresponding to various application scenarios. Then we design a 256-sub-channel digital channelization system and implement it on a 64-channel parallel digital down converter to verify the structure. The system design relies on system on chip as the platform, and we verify the feasibility of it on field programmable gate array.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"387 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132511096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Rail Surface Defects Detection Based on Yolo v5 Integrated with Transformer 基于Yolo v5集成变压器的钢轨表面缺陷检测
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9824255
Qian-mao Hu, Bo Tang, Lin Jiang, Faxun Zhu, Xiaoke Zhao
{"title":"Rail Surface Defects Detection Based on Yolo v5 Integrated with Transformer","authors":"Qian-mao Hu, Bo Tang, Lin Jiang, Faxun Zhu, Xiaoke Zhao","doi":"10.1109/icet55676.2022.9824255","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9824255","url":null,"abstract":"The traditional machine vision detection method needs to manually design the characteristics of the target, the feature expression ability is insufficient and the generalization ability is not strong. Deep learning can automatically learn high-level feature information, improve the efficiency and accuracy of image recognition, and has better adaptability and universality. Transformer abandons the structure of CNN with deep neural network mainly based on self-attention mechanism, which can be processed in parallel and has global information. This paper combines CNN with Transformer and integrates transformer’s attention mechanism into Yolo V5 network structure to detect rail surface defects. The AP (average precision) of Type-I and Type-II rail defects reached 99.5% and 97.8% respectively, and FPS (frame per second) reaches 76.92 on RSDDs dataset.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130158860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-Low On-Resistance TG-LDMOS With Three Separated Gates and High-k Dielectric Comparable to DG-LDMOS 超低导通电阻TG-LDMOS，具有三个分离栅极和可与DG-LDMOS媲美的高k介电
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9825250
Chen Jia, Xianglong Li, Yabin Sun, Xiaojin Li, Yun Liu, Yanfang Ding, Yanling Shi
{"title":"Ultra-Low On-Resistance TG-LDMOS With Three Separated Gates and High-k Dielectric Comparable to DG-LDMOS","authors":"Chen Jia, Xianglong Li, Yabin Sun, Xiaojin Li, Yun Liu, Yanfang Ding, Yanling Shi","doi":"10.1109/icet55676.2022.9825250","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9825250","url":null,"abstract":"In this paper, a novel ultralow specific on-resistance (Ron,sp) triple gate lateral double-diffused MOS (TG-LDMOS) and high-k (HK) gate dielectric is proposed which is simulated by TCAD tool. It is the main concern for LDMOS to optimize the trade-off relationship between the Breakdown Voltage (BV) and specific on-resistance (Ron,sp). Adding another vertical gate compared to double gate LDMOS (DG-LDMOS) will increase the route of current, thus decreasing resistance obviously. In addition, the HK gate dielectric can optimize the channel current, which also reduces resistance. It is found that the proposed device shows lower resistance of 30.2m Ω · cm2 (TG-LDMOS) and 25.4 m Ω.cm2(TG-LDMOS(k)) at the same BV=180V. The Ron,sp is 22.3% and 53.1% lower than that of DG-LDMOS, respectively. Compared with DG-LDMOS and TG-LDMOS, the TG-LDMOS(k) achieves better tradeoff between the BV and Ron,sp.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130265485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of 8 GHz Dielectric Resonator Oscillator with Different Structure 不同结构的8ghz介质谐振振荡器设计
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9824732
Shaoshuai Hou, Yitong Jin, Zhiwen Qin, Qianrui Shen, Xiyu Zhu, Guangli Yang
{"title":"Design of 8 GHz Dielectric Resonator Oscillator with Different Structure","authors":"Shaoshuai Hou, Yitong Jin, Zhiwen Qin, Qianrui Shen, Xiyu Zhu, Guangli Yang","doi":"10.1109/icet55676.2022.9824732","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9824732","url":null,"abstract":"Microwave oscillator is an important part of RF transceiver system. In this paper, two kinds of Dielectric Resonator Oscillator (DRO) in series and parallel at 8GHz are designed by using dielectric resonator. The simulation model and specific parameters are given. Using Renesas NE3210S01 FET transistor to build the vibration circuit in Advanced Design System (ADS). The coupling model of dielectric block and microstrip line of Dielectric Resonator (DR) is established by Cell Signaling Technology (CST), to realize the parallel form and series form of dielectric resonance oscillator. The two circuits are co-simulated in ADS, at 8 GHz @100KHz, the phase noise of the series-type dielectric oscillator is −127 dBc/Hz with an output power of 7.8 dBm, while the phase noise of the shunt type dielectric oscillator is −124 dBc/Hz with an output power of 12.4 dBm.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133873404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Study of Bit Line to Storage Node Contact Leakage in Advanced DRAM 高级DRAM中位线到存储节点接触泄漏的研究
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9825242
Yexiao Yu, Zhongming Liu, Jingsi Cui, Zhong Kong, GuoBao Xiong, Hong Ma
{"title":"The Study of Bit Line to Storage Node Contact Leakage in Advanced DRAM","authors":"Yexiao Yu, Zhongming Liu, Jingsi Cui, Zhong Kong, GuoBao Xiong, Hong Ma","doi":"10.1109/icet55676.2022.9825242","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9825242","url":null,"abstract":"Retention time is a critical characteristic in Dynamic Random Memory (DRAM). In order to improve DRAM retention time, leakage must be reduced. In manufacturing, the bit line (BL) to storage Node Contact (NC) leakage is one of a key charge leak path. In this paper, BL and NC structure in an advanced 1y DRAM process were modeled and analyzed using the virtual fabrication platform. The BL overlay shifts and NC critical dimension (CD) enlarge effects on BL-NC leakage performance has been studied with direct tunneling simulation. Our analysis confirmed that the BL-NC leakage worse induced by BL footing and NC bottom damage and proper specification can be suggested to avoid such issue.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130946034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Channel Error Calibration Method for Circular Array Radar Based on Curve Fitting 基于曲线拟合的圆阵雷达信道误差标定方法
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9824259
Mingjiang Wang, Qiujun Wang, Kun Liang, Kuoye Han
{"title":"A Channel Error Calibration Method for Circular Array Radar Based on Curve Fitting","authors":"Mingjiang Wang, Qiujun Wang, Kun Liang, Kuoye Han","doi":"10.1109/icet55676.2022.9824259","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9824259","url":null,"abstract":"Channel error calibration for circular array radar can be found in many areas, such as target detection and safety surveillance. Due to curved distribution of each array element, conventional channel error correction instruments for planar array radar is no longer suitable for curved array system. Currently, mechanical correction methods for curved arrays are generally sophisticated, expensive and low efficiency. This manuscript provides a new and convenient channel error correction method for circular array radar system based on pattern fitting. Through constructions of approximation function model of single unit pattern and pattern fitting model of full array concerning physical parameters of radar, channel errors of all elements can be estimated through solving a related optimization model. After the signals fed to each element are compensated by estimated error correction factors, synthetic radiation pattern of full array can be accurately corrected. The proposed method can significantly improve beam synthesis performance of circular array radar and experiment results validate the effectiveness of suggested strategy.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128840699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AC Voltage Measurement Device Based on AC Josephson Quantum Voltage Standard 基于交流约瑟夫森量子电压标准的交流电压测量装置
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9824191
Wang Ying, Wu Kang, Zhang Junqi, Chen Jiaxu
{"title":"AC Voltage Measurement Device Based on AC Josephson Quantum Voltage Standard","authors":"Wang Ying, Wu Kang, Zhang Junqi, Chen Jiaxu","doi":"10.1109/icet55676.2022.9824191","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9824191","url":null,"abstract":"Based on the pulse driven Josephson arbitrary waveform synthetic voltage standard, a set of measurement device is designed to calibrate AC voltage. The device is mainly composed of AC Josephson quantum voltage standard, phase-locked amplifier, signal generator and supporting measurement software, which realize the AC voltage measurements of 1V(root mean square)at 1kHz with expanded uncertainties (k = 2) of no more than $5.0 times 10 ^{-6}$.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115908472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A W-band Wideband Circularly Polarized Reconfigurable Microstrip Antenna 一种w波段宽带圆极化可重构微带天线
2022 IEEE 5th International Conference on Electronics Technology (ICET) Pub Date : 2022-05-13 DOI: 10.1109/icet55676.2022.9824026
Zhongbing Zhou, Minghua Zhao
{"title":"A W-band Wideband Circularly Polarized Reconfigurable Microstrip Antenna","authors":"Zhongbing Zhou, Minghua Zhao","doi":"10.1109/icet55676.2022.9824026","DOIUrl":"https://doi.org/10.1109/icet55676.2022.9824026","url":null,"abstract":"In this paper, a wide band circularly polarized reconfigurable microstrip antenna is designed by using multivariate method. The antenna works in the W band, four radiation patches are fed coupling through the H-type gap, so that the adjacent patch radiation unit generates a pair of electromagnetic waves with vertical polarization. The 90° bridge is used to make each pair of electromagnetic waves with the same amplitude and 90°phase difference, so as to realize the circular polarization of the antenna. MEMS switch can be connected externally. Selecting the input end of a 90° bridge makes the phase between radiation elements advance or lag 90°, thus achieving reconfigurable left-right circular polarization. Ansoft HFSS simulation shows that the antenna has a central frequency point of 78 GHz, a return loss of less than -10 dB, a bandwidth of 13.9 GHz with a voltage standing wave ratio of less than 2, and a bandwidth of 15 GHz with an axial ratio of less than 3 dB, realizing the circular polarization performance of the antenna.","PeriodicalId":166358,"journal":{"name":"2022 IEEE 5th International Conference on Electronics Technology (ICET)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114932722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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