Journal of Microelectromechanical Systems最新文献

{"title":"Reduction of Motional Resistance Using Piezoelectric on Silicon MEMS Disk Arrays for Ambient Air Applications","authors":"Abid Ali;Suaid Tariq Balghari;Muhammad Wajih Ullah Siddiqi;Frederic Nabki","doi":"10.1109/JMEMS.2025.3571721","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3571721","url":null,"abstract":"This paper presents the implementation of a piezoelectric contour resonance mode in a micro-electro-mechanical (MEM) disk resonator array, fabricated using a low-cost, commercially available MEMS technology. The resonator operates in a Button-like (BL) mode, which is suitable for a fully differential piezoelectric transduction mechanism. Compared to other modes, such as the anti-symmetric (AS) mode and the Higher wine glass (HWG) mode, the BL mode offers a higher quality factor (<italic>Q</i>) and a reasonable coupling coefficient (<inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula>) for the same perimeter around the disk device. The mechanical coupling and excitation of a parallel array of nodal point-coupled piezoelectric disk resonators significantly reduce the motional resistance (<italic>R_m</i>) of the vibrating disk MEMS resonator, making the BL mode highly attractive due to the achieved performance improvements. The implementation of this method with three resonators results in an effective motional resistance of <inline-formula> <tex-math>$101~Omega $ </tex-math></inline-formula> at 32 MHz under ambient air conditions. This value is approximately 3.9 times lower (<italic>Q_ul</i> normalized) than the <italic>R_m</i> of <inline-formula> <tex-math>$822~Omega $ </tex-math></inline-formula> exhibited by a single contour mode disk resonator. Additionally, an unloaded quality factor (<italic>Q_ul</i>) of 8,230 is observed when operating at 0 dBm power in ambient air. Notably, these enhancements are achieved while maintaining an effective <inline-formula> <tex-math>$Q_{ul} gt 10,000$ </tex-math></inline-formula>, as measured in vacuum conditions, along with notable power-handling capabilities in both ambient air and vacuum environments. This work also investigates two other contour resonance modes with the same design considerations to further validate the proposed methodology. [2025-0006]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"459-471"},"PeriodicalIF":3.1,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"60-g FSR, 6-μg Stability FM Time-Switched Accelerometers Through Shaped Comb Fingers","authors":"Luca Pileri;Christian Padovani;Gabriele Gattere;Giacomo Langfelder","doi":"10.1109/JMEMS.2025.3572614","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3572614","url":null,"abstract":"The work presents a new design of a frequency-modulated (FM) in-plane accelerometer in which the frequency-tuning mechanism is implemented through shaped comb finger (SCF) electrodes. This approach releases the constraints on the travel range of the proof-mass antiphase mode, thus increasing the resonance current and, in turn, improving phase noise. The elementary tuning finger cell is optimized via electrostatic finite element models and is then incorporated into the main sensor design. Experimental data confirm the design validity, achieving almost an order of magnitude improvement in terms of noise: <inline-formula> <tex-math>$mathbf {45, mu text {g}/sqrt {text {Hz}}}$ </tex-math></inline-formula> velocity random walk and <inline-formula> <tex-math>$mathbf {6, mu text {g}}$ </tex-math></inline-formula> bias stability at 1000 s are achieved, while holding <inline-formula> <tex-math>$mathbf {pm 60, text {g}}$ </tex-math></inline-formula> full-scale range, thus leading to 120 dB dynamic range on a 25-Hz bandwidth. Scale factor repeatability, offset drift in temperature and rejection of vibrations are also given attention, measured and discussed. [2025-0037]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"379-388"},"PeriodicalIF":3.1,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A High-Performance Mechanically Coupled Quadruple Breathing Mode Ring Resonator","authors":"Bowen Li;Yuhao Xiao;Longlong Li;Zhaomin Hua;Guoqiang Wu","doi":"10.1109/JMEMS.2025.3571519","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3571519","url":null,"abstract":"This letter reports a mechanically coupled quadruple breathing mode ring (QBR) resonator, in which four identical rings are located at the four corners of a square plate with proper design for achieving favorable mechanical coupling. The coupled QBR resonator is purposely designed and forced into vibrating in a square extensional (SE)-coupled-breathing ring (BR) mode by applying electrostatic forces to the electrodes distributed both within and surrounding the rings. Measurement results illustrate that the fabricated coupled QBR resonator has a high quality factor (<inline-formula> <tex-math>$boldsymbol {Q}$ </tex-math></inline-formula>) of 322,110 and a low motional impedance of 18.12 k<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> at its resonant frequency of 10.12 MHz. The measured frequency shift is less than ±67 ppm over the entire industrial temperature range of −40 to <inline-formula> <tex-math>$+ 85~^{circ } $ </tex-math></inline-formula>C, with a turnover point near room temperature. Compared with a standalone SE mode or BR resonator, the reported coupled QBR resonator demonstrates a notable reduction in motional impedance and superior frequency-temperature stability, thanks to the large transduction area of the coupled QBR resonator and the excellent frequency-temperature stability of the SE mode resonator as the core coupling element. In light of its decent performance, the coupled QBR resonator has promising application prospects in the field of temperature-compensated MEMS oscillators (TCMOs). [2025-0054]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"365-367"},"PeriodicalIF":3.1,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theory and Experimental Demonstration of Symmetrically Bistable MEMS Pin-Joint Buckled Beam","authors":"Shun Yasunaga;Motohiko Ezawa;Yoshio Mita","doi":"10.1109/JMEMS.2025.3560138","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3560138","url":null,"abstract":"In-plane moving MEMS bistable elements with symmetrical stable states can be realized using post-process compression of a straight beam to be made buckle. This paper derives and experimentally demonstrates an analytical theory of this element. Design parameters of the component structures, a buckling beam, supporting arms, and compression mechanisms with a receptacle that can be made flexible are related to the behavior including the beam’s profile, the force required to make a flip to the other state, and the displacement where the flip happens. Test devices were fabricated using the silicon-on-insulator MEMS technique and their response to an electrostatic attraction was measured. The experimental results matched the developed theory. The theory and the experimental results presented in this paper can facilitate the introduction of symmetrical bistable structures as a new mechanical element in future MEMS devices. [2025-0002]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"408-421"},"PeriodicalIF":3.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144756771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phononic Integrated Circuit Component Design and Analysis for Surface Acoustic Waves in ScAlN on Silicon Carbide","authors":"Jack Guida;Siddhartha Ghosh","doi":"10.1109/JMEMS.2025.3560854","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3560854","url":null,"abstract":"This work presents a two-fold study on the numerical modeling and experimental demonstration of phononic components using surface acoustic waves (SAWs) in 30% scandium aluminum nitride (ScAlN) thin films on silicon carbide (SiC). Compact phononic integrated circuits (PnICs) enabled by focusing interdigitated transducers (FIDTs) in slow-on-fast piezoelectric platforms offer a promising approach for signal processing by exploiting acoustic wave manipulation. Key working principles, including acoustic waveguiding with three-dimensional confinement, bending, splitting, and coupling, are demonstrated to advance the development of PnICs, facilitating the creation of compact, efficient devices for signal processing applications. [2024-0205]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"368-378"},"PeriodicalIF":3.1,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of Al and Ni-P Films as Hardmasks for the ICP-RIE Plasma Etching Bosch Process","authors":"Camila Sola Ruiz;Valter Salles do Nascimento;Clovis Fischer;Frederico Hummel Cioldin;Audrey Roberto Silva;Jose Alexandre Diniz","doi":"10.1109/JMEMS.2025.3535688","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3535688","url":null,"abstract":"The high-performance mechanical resistance has attracted intensive scientific interest in Hardmasks (HMs) films applicable via the Bosch etching process for Silicon Micro-Channels (SiMCs) fabrication. This manuscript compares different film deposition methods and metal film behavior as HMs during the dry etching for the Bosch process in the Inductively Coupled Plasma and Reactive Ion Etching system. The HMs were deposited by thermal evaporation Aluminum (Alev), DC Sputtering Aluminum (Alspu), and bath chemical Nickel-phosphorus (Ni-P). The 500nm, <inline-formula> <tex-math>$1mu $ </tex-math></inline-formula>m and <inline-formula> <tex-math>$1mu $ </tex-math></inline-formula>m thick layers of Alspu, Alev and Ni-P films, respectively, were deposited on the Si wafer (p-type (100) orientation, <inline-formula> <tex-math>$400mu $ </tex-math></inline-formula>m thick layer, and 3-inch diameter). The Four Point Probe Measurements and Atomic Force Microscopy (AFM) analyses extract the resistivity and grain size values, respectively. For this work, the HM patterns consist of parallel metallic lines ranging from 175 to <inline-formula> <tex-math>$220~mu $ </tex-math></inline-formula>m in width with spacing between 230 and <inline-formula> <tex-math>$500~mu $ </tex-math></inline-formula>m. The pattern transfer technique was carried out by lithography and wet etching. All samples were cleaved on <inline-formula> <tex-math>$10times 10$ </tex-math></inline-formula>mm squares with a <inline-formula> <tex-math>$400~mu $ </tex-math></inline-formula>m thick layer. The Bosch etching process was applied for time variations between 40sec and 60sec per cycle, using SF<inline-formula> <tex-math>${}_{6}+$ </tex-math></inline-formula>Ar and C4F<inline-formula> <tex-math>${}_{8}+$ </tex-math></inline-formula>Ar, to obtain the SiMCs, with anisotropic etching and depth values between <inline-formula> <tex-math>$66~mu $ </tex-math></inline-formula>m and <inline-formula> <tex-math>$104~mu $ </tex-math></inline-formula>m. The SiMC depth values were measured using Scanning Electron Microscopy (SEM) and Scan Profile analyses. The Al and Ni-P film analyses of the resistivity and grain size were related to the HM performance during the Bosch process. Key Words: ICP-RIE, Si Microchannel, Bosch process.[2024-0149]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"244-251"},"PeriodicalIF":2.5,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wafer-Level Fabrication of FAIMS Chips Based on TGV Technology","authors":"Zhengrui Hu;Han Wang;Shan Li;Youjiang Liu;Chunjing Xu;Shaomin Liu;Jianhui Wei;Chilai Chen","doi":"10.1109/JMEMS.2025.3554629","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3554629","url":null,"abstract":"By introducing the strengths of the vertical interconnection of TGV (Through Glass Via) technology into FAIMS (high-Field Asymmetric waveform Ion Mobility Spectrometry) chip manufacturing, we propose a wafer-level TGV-MS (multi-stack) FAIMS chip manufacturing method and achieve the wafer-level fabrication of 14 chips on a 6-inch glass wafer for the first time. The test results demonstrate that the TGV wafer manufactured based on this method shows excellent airtightness, electrical properties, and consistency with a leakage rate of <inline-formula> <tex-math>$3.94times 10 ^{-11}$ </tex-math></inline-formula> Pa<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>m³/s, a resistivity of <inline-formula> <tex-math>$1.92times 10 ^{-4}~Omega cdot $ </tex-math></inline-formula>cm. A single FAIMS chip volume is <inline-formula> <tex-math>$4.8times 1.6 times 0.16$ </tex-math></inline-formula> cm³, weight is 2.28 g, the relative thickness error is less than 0.3%, and the parallelism error is less than 0.01°. Meanwhile, typical volatile organic compounds benzene and toluene were selected as samples to test the separation performance of the FAIMS chip, and the detection spectra under different gas concentrations and voltages were obtained. The experimental results show that the wafer-level FAIMS chip has a good resolution for benzene and toluene, and the linear detection range for the two samples is 0.1 ppm to 2 ppm (linear fitting coefficients 98.9%, 99.5%). The detection limit for benzene and toluene is 77 ppb. This paper solves the problem that microfluidic structures with electrodes cannot be manufactured at the wafer level due to side planar electrode leads, greatly simplifies the structure of the chip, realizes the mass production of FAIMS chips, and provides a technical reference for the wafer-level manufacturing of analysis sensors such as microfluidic chips with electrode structures and MEMS mass analyzers. [2024-0229]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"252-259"},"PeriodicalIF":2.5,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deep Wet Etching of a Z-Cut α-Quartz Wafer by Fluorine-Based Solutions: Experiment, Mechanism, and Application","authors":"Hong Xue;Jiabin Ai;Zichao Zhang;Bo Li;Bing Bai;Cun Li;Yulong Zhao","doi":"10.1109/JMEMS.2025.3555563","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3555563","url":null,"abstract":"Quartz is an indispensable material in microelectromechanical system (MEMS) technology to manufacture miniaturized oscillators and sensors. The fabrication process of quartz, however, encumbers its development for extensive applications, as it is difficult to ideally control processed dimensions. Although dry etching or other special machining techniques have been profoundly researched, wet etching is still the most practical and cost-effective method to obtain desired structures. In this study, z-cut <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-quartz wafers were etched by ammonium bifluoride solutions of different concentrations at various temperatures, and the etched results including depth, roughness, and morphology were measured, calculated and analyzed. Subsequently, the tendency of the etched results with respect to temperature and concentration reflected the correlation of conditional parameters on the etched results, and suggested that the distinction of roughness at a specific etched depth was insignificant despite the variation in etchant concentration. Additionally, the etched results were analyzed further to reveal the etching mechanism of different fluorine-based solutions. At last, the pendulum of quartz resonant accelerometer was fabricated by different etchants, and their mechanical and thermal performances were compared, indicating that smoother etched surface is beneficial to realize appropriate sensitivity and optimize thermal stability. These investigations provide quantitative data and qualitative analyses to improve the deep wet etching process in terms of design, manufacture, and performance for quartz MEMS devices. [2025-0007]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"332-346"},"PeriodicalIF":2.5,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3546836","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3546836","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10956169","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transducers 2025","authors":"","doi":"10.1109/JMEMS.2025.3546141","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3546141","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"240-240"},"PeriodicalIF":2.5,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10957758","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}