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2015 International Conference on Memristive Systems (MEMRISYS)最新文献

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Short-term to long-term plasticity transition in filamentary switching for memory applications 记忆应用中纤维开关的短期到长期可塑性转换
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378402
S. La Barbera, A. Vincent, D. Vuillaume, D. Querlioz, F. Alibart
{"title":"Short-term to long-term plasticity transition in filamentary switching for memory applications","authors":"S. La Barbera, A. Vincent, D. Vuillaume, D. Querlioz, F. Alibart","doi":"10.1109/MEMRISYS.2015.7378402","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378402","url":null,"abstract":"The emergence of memristive devices is currently driving an increasing interest in neuromorphic computing, which could complement and provide enhanced functionalities to existing CMOS/Von Neumann processors. Various plasticity mechanisms, analogous to synaptic plasticity in the brain, have indeed been implemented in emerging memristive systems. Additionally, we have recently demonstrated experimentally that several synaptic features can be embedded in a single memory component by exploiting the basic physics of filamentary resistive switching [1]. Here, by exploiting a memristive synaptic bio-model of this original behavior, we show how this device can modulate its weight in a Short-Term Plasticity (STP) to Long-Term Plasticity (LTP) transition, and how this can be harnessed in a neuromorphic memory application. These results pave the way for future engineering of neuromorphic computing systems, where complex behaviors of memristive physics can be exploited.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130640694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Memristor: the enabler of computation-in-memory architecture for big-data 忆阻器:大数据内存计算架构的推动者
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378391
S. Hamdioui, M. Taouil, Hoang Anh Du Nguyen, Adib Haron, Lei Xie, K. Bertels
{"title":"Memristor: the enabler of computation-in-memory architecture for big-data","authors":"S. Hamdioui, M. Taouil, Hoang Anh Du Nguyen, Adib Haron, Lei Xie, K. Bertels","doi":"10.1109/MEMRISYS.2015.7378391","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378391","url":null,"abstract":"This paper briefly discusses a new architecture, Computation-In-Memory (CIM Architecture), for specific data-intensive applications; it is based on the integration of storage and computation in the same physical location (crossbar topology) and the use of non-volatile resistive-switching technology (memristive devices or memristors in short) instead of CMOS technology. The architecture has the potential of improving the energy-delay product, computing efficiency and performance area by at least two orders of magnitude.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131541591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Unfolding principle gives insight into physics behind threshold switching in a NbO memristor 展开原理揭示了NbO忆阻器阈值开关背后的物理原理
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378399
A. Ascoli, S. Slesazeck, H. Mahne, R. Tetzlaff, T. Mikolajick
{"title":"Unfolding principle gives insight into physics behind threshold switching in a NbO memristor","authors":"A. Ascoli, S. Slesazeck, H. Mahne, R. Tetzlaff, T. Mikolajick","doi":"10.1109/MEMRISYS.2015.7378399","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378399","url":null,"abstract":"This paper presents an accurate physical model for the threshold switching effect in a Niobium oxide-based memristor. The proposed model takes inspiration from a mathematical description for the device behaviour, recently derived by the application of a nonlinear identification procedure to the differential algebraic equation set of Chua's Unfolding Principle. The model accurately captures the device nonlinear dynamics in both pre- and post-threshold switching operation regions under distinct ambient temperatures. In the course of the threshold switching process the device internal temperature, set as the memristor state, undergoes critical changes which activate electronic conduction, but are insufficient to determine an insulator-to-metal transition. As a result the turn-on process is determined by electron flow only.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131775133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PANI-based neuromorphic networks ���� first results and close perspectives 基于聚苯胺的神经形态网络的初步结果和密切的观点
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378401
A. Emelyanov, V. Demin, D. Lapkin, V. Erokhin, S. Battistoni, G. Baldi, S. Iannotta, P. Kashkarov, M. Kovalchuk
{"title":"PANI-based neuromorphic networks ���� first results and close perspectives","authors":"A. Emelyanov, V. Demin, D. Lapkin, V. Erokhin, S. Battistoni, G. Baldi, S. Iannotta, P. Kashkarov, M. Kovalchuk","doi":"10.1109/MEMRISYS.2015.7378401","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378401","url":null,"abstract":"Perceptron is an artificial neural network that can solve simple tasks such as invariant pattern recognition, linear approximation, prediction and others. We report on the hardware realization of the perceptron with the use of polyaniline-based memristive devices as the analog link weights. An error correction algorithm was used to get the perceptron to learn to implement the NAND and NOR logic functions as examples of linearly separable tasks. The conceptual scheme of two-layer perceptron is proposed to implement all possible logic functions including linearly inseparable ones (as XOR, for example). It is also shown how organic memristive links between two layers of neurons could be made on the base of stochastic block copolymer matrices which greatly simplifies and makes cheaper the mass-production of such networks. The physical realization of a perceptron demonstrates the ability to form the hardware-based neuromorphic networks with the use of organic memristive devices. This holds a great promise towards new approaches for very compact, low-volatile and high-performance neurochips that could be made for a huge number of intellectual products and applications.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125233396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Memristor based neuromorphic circuit for visual pattern recognition 基于忆阻器的视觉模式识别神经形态电路
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378387
P. Lorenzi, V. Sucre, G. Romano, R. Rao, F. Irrera
{"title":"Memristor based neuromorphic circuit for visual pattern recognition","authors":"P. Lorenzi, V. Sucre, G. Romano, R. Rao, F. Irrera","doi":"10.1109/MEMRISYS.2015.7378387","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378387","url":null,"abstract":"In this work a simple network composed by a first 25 sensory neurons layer and a second 10 output neuron layer connected by 250 memristor synapses is proposed. The system was simulated in PSPICE in order to recognize 5X5 pixel binary images.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129613582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simplified SPICE model of TiO TiO的简化SPICE模型
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378384
Z. Kolka, V. Biolková, D. Biolek
{"title":"Simplified SPICE model of TiO","authors":"Z. Kolka, V. Biolková, D. Biolek","doi":"10.1109/MEMRISYS.2015.7378384","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378384","url":null,"abstract":"The paper presents a SPICE implementation of a behavioral model of the TiO2 memristor which is equivalent to the Pickett model, but it is easier to simulate with respect to convergence and matrix size. The proposed port equation approximates the Simmons model of tunneling barrier. The state equation has been modified in order to prevent exponential overflows during simulation. A full PSpice netlist is provided.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122066166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Exploring ReRAM-based memristors in the charge-flux domain, a modeling approach 在电荷通量领域探索基于reram的忆阻器，一种建模方法
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378386
R. Picos, J. Roldán, M. M. Al Chawa, F. Jiménez-Molinos, M. A. Villena, E. García-Moreno
{"title":"Exploring ReRAM-based memristors in the charge-flux domain, a modeling approach","authors":"R. Picos, J. Roldán, M. M. Al Chawa, F. Jiménez-Molinos, M. A. Villena, E. García-Moreno","doi":"10.1109/MEMRISYS.2015.7378386","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378386","url":null,"abstract":"We analyzed ReRAM-based memristors by using the charge-flux relations instead of the traditional current-voltage approach. We used simulated and experimental data to develop a circuit model. Simulations of devices with different conductive filament sizes were employed to fit a 3-parameter model, later on the relations between the model parameters were characterized in-depth. Finally, we used the model to estimate the experimental conductive filament radius distribution using 3000 reset cycles.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132949425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Combined optical/e-beam lithography approach for the development of HfO2-based memristors in crossbars 光/电子束联合光刻技术用于开发基于hfo2的横条记忆电阻器
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378397
R. Kirtaev, Yury Matveyev, A. Fetisova, D. Negrov, A. Zenkevich
{"title":"Combined optical/e-beam lithography approach for the development of HfO2-based memristors in crossbars","authors":"R. Kirtaev, Yury Matveyev, A. Fetisova, D. Negrov, A. Zenkevich","doi":"10.1109/MEMRISYS.2015.7378397","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378397","url":null,"abstract":"In this work, crossbars with memristors down to 40x40 nm2 in size were fabricated by hybrid process combining optical and e-beam lithography. The developed process provides ~90% yield of <;<;forming-free>> nanodevices exhibiting memristive properties with endurance up to 105 cycles, making this approach suitable for neuromorphic applications.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"256 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124008496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling of the major and minor I-V loops in La0.3Ca0.7MnO3 films using asymmetric logistic hysterons La0.3Ca0.7MnO3薄膜中主要和次要I-V回路的非对称逻辑滞回建模
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378398
W. R. Acevedo, D. Rubi, F. G. Marlasca, F. Golmar, U. Lüders, J. Lecourt, J. Suñé, P. Levy, E. Miranda
{"title":"Modeling of the major and minor I-V loops in La0.3Ca0.7MnO3 films using asymmetric logistic hysterons","authors":"W. R. Acevedo, D. Rubi, F. G. Marlasca, F. Golmar, U. Lüders, J. Lecourt, J. Suñé, P. Levy, E. Miranda","doi":"10.1109/MEMRISYS.2015.7378398","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378398","url":null,"abstract":"The conduction characteristics of La1/3Ca2/3MnO3 (LCMO) films grown by pulsed laser deposition were investigated. The devices exhibit bipolar resistive switching effect with intermediate conduction states achievable by the application of positive and negative voltage ramps. The I-V curves are modeled using a nonlinear memristive approach based on the double-diode equation and the solution of the generalized logistic differential equation.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126229665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Insights to memristive memory cell from a reliability perspective 从可靠性角度对记忆记忆单元的见解
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378382
P. Pouyan, E. Amat, A. Rubio
{"title":"Insights to memristive memory cell from a reliability perspective","authors":"P. Pouyan, E. Amat, A. Rubio","doi":"10.1109/MEMRISYS.2015.7378382","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378382","url":null,"abstract":"The scaling roadmap of devices under a “more than Moore” scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the impact of two of the main reliability concerns in the design of memristive memories: variability and degradation, and proposes circuit solution to enhance their reliability.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134436736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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