光/电子束联合光刻技术用于开发基于hfo2的横条记忆电阻器

2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI:10.1109/MEMRISYS.2015.7378397

R. Kirtaev, Yury Matveyev, A. Fetisova, D. Negrov, A. Zenkevich

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引用次数: 3

摘要

在这项工作中，采用光学和电子束光刻相结合的混合工艺制造了尺寸为40x40 nm2的忆阻器横条。所开发的工艺提供了~90%的>纳米器件产率，具有记忆电阻特性，续航时间高达105次，使该方法适用于神经形态应用。

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Combined optical/e-beam lithography approach for the development of HfO2-based memristors in crossbars

In this work, crossbars with memristors down to 40x40 nm2 in size were fabricated by hybrid process combining optical and e-beam lithography. The developed process provides ~90% yield of <;<;forming-free>> nanodevices exhibiting memristive properties with endurance up to 105 cycles, making this approach suitable for neuromorphic applications.

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2015 International Conference on Memristive Systems (MEMRISYS)

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