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2015 International Conference on Memristive Systems (MEMRISYS)最新文献

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Gradual set dynamics in HfO2-based memristor driven by sub-threshold voltage pulses 亚阈值电压脉冲驱动的hfo2基忆阻器的逐渐设定动力学
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378383
S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, S. Spiga
{"title":"Gradual set dynamics in HfO2-based memristor driven by sub-threshold voltage pulses","authors":"S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, S. Spiga","doi":"10.1109/MEMRISYS.2015.7378383","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378383","url":null,"abstract":"The switching dynamics of filamentary Pt/HfO2/TiN memristive devices is managed through sub-threshold pulses in order to display gradual resistance decrease useful for analog logic computation based on spiking networks. Such memristive devices are known to display abrupt set transitions (resistance decrease) that require current limitation because of the triggering of a threshold switching event. In this report, we demonstrate the gradual resistance decrease driven by trains of identical sub-threshold pulses. The experimental finding is explained by a compact model considering a gradual closure of the filament interruption and a following lateral filament growth.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"115 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124090618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Modular emulators of memristors and other higher-order elements from Chua’s periodical table 记忆电阻器和蔡氏周期表中其他高阶元件的模块化仿真器
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378394
D. Biolek, Tomas Teska, V. Biolková, Z. Kolka
{"title":"Modular emulators of memristors and other higher-order elements from Chua’s periodical table","authors":"D. Biolek, Tomas Teska, V. Biolková, Z. Kolka","doi":"10.1109/MEMRISYS.2015.7378394","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378394","url":null,"abstract":"The paper presents a set of black-box modules for emulating higher-order elements (HOEs) from Chuás periodical table, based on special mutators. For the emulation of arbitrary HOE, four kinds of modules with various directions of movement across the table are necessary: one for horizontal direction, one for vertical direction, and two for diagonal directions. Another four mutators are needed in order to overcome the potential conflict of ideal sources if the same types are connected together. Overall eight kinds of modules are used. Their proper cascade connection can serve for emulating arbitrary elements from Chua's table.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127944300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Heterogeneous memristive crossbar for in-memory computing 内存计算的异构记忆交叉栏
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378388
G. Papandroulidakis, I. Vourkas, G. Sirakoulis, A. Rubio
{"title":"Heterogeneous memristive crossbar for in-memory computing","authors":"G. Papandroulidakis, I. Vourkas, G. Sirakoulis, A. Rubio","doi":"10.1109/MEMRISYS.2015.7378388","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378388","url":null,"abstract":"It's been quite a while since scientists are seeking for the ancestor of von Neumann computing architecture. Among the most promising candidates, memristor demonstrates advantageous characteristics, which open new pathways for the exploration of advanced computing paradigms. In this work we propose the design of a novel crossbar geometry, which is heterogeneous in terms of its cross-point devices, allowing for the realization of true in-memory digital logic computations. More specifically, it is a combination of two stacked crossbar arrays with a shared intermediate nanowire layer. The variety of available cross-points types allows the execution of parallel memristive logic computations, where the logic state variable is voltage. Moreover, the utilization of insulating patterns in the crossbar arrays, at the expense of a small area-overhead, permits the simultaneous parallel read/write memory operation of two memory words. Memory/logic operation is determined through control signals driven from the peripheral CMOS-based driving circuitry, which also comprises row/column decoders, tri-state drivers, and summing/sense amplifiers to allow for the proper programming/reading of the memristive cross-points.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115218715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A non-deal memristor device 非交易忆阻器装置
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378393
A. Theodorakakos, S. Stavrinides, E. Hatzikraniotis, R. Picos
{"title":"A non-deal memristor device","authors":"A. Theodorakakos, S. Stavrinides, E. Hatzikraniotis, R. Picos","doi":"10.1109/MEMRISYS.2015.7378393","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378393","url":null,"abstract":"In this brief, the memristive behavior of a very simple device, that of a tungsten filament bulb, is reported. In specific, this kind of element operates as a non-ideal memristor, thus demonstrating a Type-II non-crossing, pinched hysteretic loop. A brief description of this experimental behavior from the perspective of memristive properties, is apposed.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121688916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Interfacing physarum polycephalum with organic memristors 用有机记忆电阻器连接多头绒泡菌
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378381
A. Dimonte, A. Romeo, G. Tarabella, P. D’Angelo, V. Erokhin, S. Iannotta
{"title":"Interfacing physarum polycephalum with organic memristors","authors":"A. Dimonte, A. Romeo, G. Tarabella, P. D’Angelo, V. Erokhin, S. Iannotta","doi":"10.1109/MEMRISYS.2015.7378381","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378381","url":null,"abstract":"Since their prediction, memristive devices revolutionized the world of computing and nowadays they have been widely considered as promising candidate for mimicking synapses. In particular, organic-based memristors allow the construction of circuits capable of learning. Physarum Polycephalum slime mold is well suited for the implementation of the functional properties of smart living systems into electronic devices. Physarum has memory patterns that can be associated to learning, generally considered a feature of more complex species. Here we presents the characteristics of an hybrid memristor developed by interfacing poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate), (PEDOT:PSS), with Physarum Polycephalum (PP). The device has memristive features resulting by electrochemical changes occurring into the polymer upon application of anodic potentials across the semiconducting PEDOT:PSS channel.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126267865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of PANI biocompatibility with neuronal cells 聚苯胺与神经细胞的生物相容性分析
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378403
S. Battistoni, V. Erokhin, N. Cornella, T. Berzina, P. Macchi, S. Iannotta
{"title":"Analysis of PANI biocompatibility with neuronal cells","authors":"S. Battistoni, V. Erokhin, N. Cornella, T. Berzina, P. Macchi, S. Iannotta","doi":"10.1109/MEMRISYS.2015.7378403","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378403","url":null,"abstract":"In this present work, initial results of the growing of neuronal like cells on the memristive substrate are going to be presented. SH-SY5Y line cells where chosen for this test, thanks to their features similar to neurons and they were grown on Polyaniline (PANI) multilayer. PANI is a well known conductive polymer and it's also the active layer of a special class of device, the organic memristors. It's deposited by Langmuir-Schaefer technique on a round cover glass support.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127666380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Approximate programming of magnetic memory elements for energy saving 节能磁存储元件的近似编程
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378400
N. Locatelli, A. Vincent, S. Galdin-Retailleau, Jacques-Olivier Klein, D. Querlioz
{"title":"Approximate programming of magnetic memory elements for energy saving","authors":"N. Locatelli, A. Vincent, S. Galdin-Retailleau, Jacques-Olivier Klein, D. Querlioz","doi":"10.1109/MEMRISYS.2015.7378400","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378400","url":null,"abstract":"The high density of on-chip nonvolatile memory provided by memristive elements is highly desirable for many applications. However, it raises concerns about finding the best programming strategies to limit the energy consumption of such systems. Here, we highlight the case of magnetic memory, where several unconventional programming strategies can reduce energy consumption, especially for applications in neuromorphic computing.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132790642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Radiation hard design of HfO2 based 1T1R cells and memory arrays 基于HfO2的1T1R电池和存储阵列的辐射硬设计
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378390
A. Grossi, C. Calligaro, E. Pérez, Jens Schmidt, F. Teply, Thomas Mausolf, C. Zambelli, P. Olivo, C. Wenger
{"title":"Radiation hard design of HfO2 based 1T1R cells and memory arrays","authors":"A. Grossi, C. Calligaro, E. Pérez, Jens Schmidt, F. Teply, Thomas Mausolf, C. Zambelli, P. Olivo, C. Wenger","doi":"10.1109/MEMRISYS.2015.7378390","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378390","url":null,"abstract":"In this work the electrical performance of a Rad- Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO2/Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115297252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Practical gradient-descent for memristive crossbars 记忆横梁的实用梯度下降法
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378392
M. V. Nair, P. Dudek
{"title":"Practical gradient-descent for memristive crossbars","authors":"M. V. Nair, P. Dudek","doi":"10.1109/MEMRISYS.2015.7378392","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378392","url":null,"abstract":"This paper discusses implementations of gradientdescent based learning algorithms on memristive crossbar arrays. The Unregulated Step Descent (USD) is described as a practical algorithm for feed-forward on-line training of large crossbar arrays. It allows fast feed-forward fully parallel on-line hardware based learning, without requiring accurate models of the memristor behaviour and precise control of the programming pulses. The effect of device parameters, training parameters, and device variability on the learning performance of crossbar arrays trained using the USD algorithm has been studied via simulations.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117193758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Organic memristive devices based circuits for bio-inspired memorizing and processing of the information 基于生物启发记忆和信息处理电路的有机记忆装置
2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI: 10.1109/MEMRISYS.2015.7378389
V. Erokhin
{"title":"Organic memristive devices based circuits for bio-inspired memorizing and processing of the information","authors":"V. Erokhin","doi":"10.1109/MEMRISYS.2015.7378389","DOIUrl":"https://doi.org/10.1109/MEMRISYS.2015.7378389","url":null,"abstract":"The paper is dedicated to the hardware realization neuromorphic networks mimicking some properties of the nervous system. In particular, we will consider memristive devices-based logic gates with memory, elementary perceptron, and deterministic and stochastic networks, where memristive devices are used as electronic analogs of biological synapses.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126614471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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