Radiation hard design of HfO2 based 1T1R cells and memory arrays

2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI:10.1109/MEMRISYS.2015.7378390

A. Grossi, C. Calligaro, E. Pérez, Jens Schmidt, F. Teply, Thomas Mausolf, C. Zambelli, P. Olivo, C. Wenger

引用次数: 2

Abstract

In this work the electrical performance of a Rad- Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO2/Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.

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基于HfO2的1T1R电池和存储阵列的辐射硬设计

本文首次介绍了Rad- Hard设计的基于封闭布局晶体管(ELT)和TiN/HfO2/Ti/TiN基电阻组合的1T-1R器件的电性能。此外，还提出了一种实现1Mbit辐射硬随机存储器阵列的体系结构方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 International Conference on Memristive Systems (MEMRISYS)

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