用有机记忆电阻器连接多头绒泡菌

A. Dimonte, A. Romeo, G. Tarabella, P. D’Angelo, V. Erokhin, S. Iannotta
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引用次数: 0

摘要

自他们的预测以来,忆阻装置彻底改变了计算世界,如今它们被广泛认为是模拟突触的有前途的候选者。特别是,基于有机的记忆电阻器允许构建具有学习能力的电路。多头绒泡菌黏菌非常适合将智能生活系统的功能特性实现到电子设备中。绒泡菌具有与学习有关的记忆模式,通常被认为是更复杂物种的特征。本文介绍了一种杂化记忆电阻器的特性,这种杂化记忆电阻器是由掺杂聚苯乙烯磺酸盐(PEDOT:PSS)的聚(3,4-乙烯二氧噻吩)与多头泡丝菌(PP)相连接而成的。该器件具有忆阻特性,这是由于在半导体PEDOT:PSS通道上施加阳极电位时聚合物发生的电化学变化造成的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interfacing physarum polycephalum with organic memristors
Since their prediction, memristive devices revolutionized the world of computing and nowadays they have been widely considered as promising candidate for mimicking synapses. In particular, organic-based memristors allow the construction of circuits capable of learning. Physarum Polycephalum slime mold is well suited for the implementation of the functional properties of smart living systems into electronic devices. Physarum has memory patterns that can be associated to learning, generally considered a feature of more complex species. Here we presents the characteristics of an hybrid memristor developed by interfacing poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate), (PEDOT:PSS), with Physarum Polycephalum (PP). The device has memristive features resulting by electrochemical changes occurring into the polymer upon application of anodic potentials across the semiconducting PEDOT:PSS channel.
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