S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, S. Spiga
{"title":"亚阈值电压脉冲驱动的hfo2基忆阻器的逐渐设定动力学","authors":"S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, S. Spiga","doi":"10.1109/MEMRISYS.2015.7378383","DOIUrl":null,"url":null,"abstract":"The switching dynamics of filamentary Pt/HfO2/TiN memristive devices is managed through sub-threshold pulses in order to display gradual resistance decrease useful for analog logic computation based on spiking networks. Such memristive devices are known to display abrupt set transitions (resistance decrease) that require current limitation because of the triggering of a threshold switching event. In this report, we demonstrate the gradual resistance decrease driven by trains of identical sub-threshold pulses. The experimental finding is explained by a compact model considering a gradual closure of the filament interruption and a following lateral filament growth.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"115 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Gradual set dynamics in HfO2-based memristor driven by sub-threshold voltage pulses\",\"authors\":\"S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, S. Spiga\",\"doi\":\"10.1109/MEMRISYS.2015.7378383\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The switching dynamics of filamentary Pt/HfO2/TiN memristive devices is managed through sub-threshold pulses in order to display gradual resistance decrease useful for analog logic computation based on spiking networks. Such memristive devices are known to display abrupt set transitions (resistance decrease) that require current limitation because of the triggering of a threshold switching event. In this report, we demonstrate the gradual resistance decrease driven by trains of identical sub-threshold pulses. The experimental finding is explained by a compact model considering a gradual closure of the filament interruption and a following lateral filament growth.\",\"PeriodicalId\":159041,\"journal\":{\"name\":\"2015 International Conference on Memristive Systems (MEMRISYS)\",\"volume\":\"115 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Memristive Systems (MEMRISYS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMRISYS.2015.7378383\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Memristive Systems (MEMRISYS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMRISYS.2015.7378383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gradual set dynamics in HfO2-based memristor driven by sub-threshold voltage pulses
The switching dynamics of filamentary Pt/HfO2/TiN memristive devices is managed through sub-threshold pulses in order to display gradual resistance decrease useful for analog logic computation based on spiking networks. Such memristive devices are known to display abrupt set transitions (resistance decrease) that require current limitation because of the triggering of a threshold switching event. In this report, we demonstrate the gradual resistance decrease driven by trains of identical sub-threshold pulses. The experimental finding is explained by a compact model considering a gradual closure of the filament interruption and a following lateral filament growth.