Heterogeneous memristive crossbar for in-memory computing

G. Papandroulidakis, I. Vourkas, G. Sirakoulis, A. Rubio
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引用次数: 3

Abstract

It's been quite a while since scientists are seeking for the ancestor of von Neumann computing architecture. Among the most promising candidates, memristor demonstrates advantageous characteristics, which open new pathways for the exploration of advanced computing paradigms. In this work we propose the design of a novel crossbar geometry, which is heterogeneous in terms of its cross-point devices, allowing for the realization of true in-memory digital logic computations. More specifically, it is a combination of two stacked crossbar arrays with a shared intermediate nanowire layer. The variety of available cross-points types allows the execution of parallel memristive logic computations, where the logic state variable is voltage. Moreover, the utilization of insulating patterns in the crossbar arrays, at the expense of a small area-overhead, permits the simultaneous parallel read/write memory operation of two memory words. Memory/logic operation is determined through control signals driven from the peripheral CMOS-based driving circuitry, which also comprises row/column decoders, tri-state drivers, and summing/sense amplifiers to allow for the proper programming/reading of the memristive cross-points.
内存计算的异构记忆交叉栏
科学家们寻找冯·诺伊曼计算架构的祖先已经有一段时间了。在最有希望的候选者中,忆阻器显示出有利的特性,为探索先进的计算范式开辟了新的途径。在这项工作中,我们提出了一种新的横杆几何设计,它在交叉点器件方面是异构的,允许实现真正的内存数字逻辑计算。更具体地说,它是两个堆叠的交叉棒阵列和一个共享的中间纳米线层的组合。各种可用的交叉点类型允许并行记忆逻辑计算的执行,其中逻辑状态变量是电压。此外,在横杆阵列中使用绝缘模式,以牺牲较小的面积开销为代价,允许两个存储字的同时并行读/写存储操作。存储器/逻辑操作是通过由基于外围cmos的驱动电路驱动的控制信号来确定的,该驱动电路还包括行/列解码器、三态驱动器和求和/感测放大器,以允许对记忆交叉点进行适当的编程/读取。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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