记忆应用中纤维开关的短期到长期可塑性转换

S. La Barbera, A. Vincent, D. Vuillaume, D. Querlioz, F. Alibart
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引用次数: 2

摘要

记忆器件的出现目前正推动人们对神经形态计算的兴趣日益浓厚,它可以补充并提供现有CMOS/冯诺伊曼处理器的增强功能。各种可塑性机制,类似于大脑中的突触可塑性,确实已经在新兴的记忆系统中实现。此外,我们最近通过实验证明,通过利用丝状电阻开关的基本物理原理,可以将几个突触特征嵌入到单个记忆组件中[1]。在这里,通过利用记忆突触生物模型的原始行为,我们展示了该设备如何在短期可塑性(STP)到长期可塑性(LTP)过渡中调节其重量,以及如何在神经形态记忆应用中加以利用。这些结果为未来神经形态计算系统的工程铺平了道路,在那里记忆物理的复杂行为可以被利用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Short-term to long-term plasticity transition in filamentary switching for memory applications
The emergence of memristive devices is currently driving an increasing interest in neuromorphic computing, which could complement and provide enhanced functionalities to existing CMOS/Von Neumann processors. Various plasticity mechanisms, analogous to synaptic plasticity in the brain, have indeed been implemented in emerging memristive systems. Additionally, we have recently demonstrated experimentally that several synaptic features can be embedded in a single memory component by exploiting the basic physics of filamentary resistive switching [1]. Here, by exploiting a memristive synaptic bio-model of this original behavior, we show how this device can modulate its weight in a Short-Term Plasticity (STP) to Long-Term Plasticity (LTP) transition, and how this can be harnessed in a neuromorphic memory application. These results pave the way for future engineering of neuromorphic computing systems, where complex behaviors of memristive physics can be exploited.
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