从可靠性角度对记忆记忆单元的见解

P. Pouyan, E. Amat, A. Rubio
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引用次数: 2

摘要

在“超越摩尔”的场景下,设备的扩展路线图正在导致新型设备的出现。其中,忆阻器似乎是有希望的候选人,适用于各种领域的应用,如存储器和神经形态计算芯片。然而,记忆器件在成为主流之前仍面临一些挑战。本文分析了记忆存储器设计中两个主要可靠性问题:可变性和退化的影响,并提出了提高可靠性的电路解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Insights to memristive memory cell from a reliability perspective
The scaling roadmap of devices under a “more than Moore” scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the impact of two of the main reliability concerns in the design of memristive memories: variability and degradation, and proposes circuit solution to enhance their reliability.
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