Exploring ReRAM-based memristors in the charge-flux domain, a modeling approach

Abstract

We analyzed ReRAM-based memristors by using the charge-flux relations instead of the traditional current-voltage approach. We used simulated and experimental data to develop a circuit model. Simulations of devices with different conductive filament sizes were employed to fit a 3-parameter model, later on the relations between the model parameters were characterized in-depth. Finally, we used the model to estimate the experimental conductive filament radius distribution using 3000 reset cycles.