La0.3Ca0.7MnO3薄膜中主要和次要I-V回路的非对称逻辑滞回建模

2015 International Conference on Memristive Systems (MEMRISYS) Pub Date : 2015-11-01 DOI:10.1109/MEMRISYS.2015.7378398

W. R. Acevedo, D. Rubi, F. G. Marlasca, F. Golmar, U. Lüders, J. Lecourt, J. Suñé, P. Levy, E. Miranda

{"title":"La0.3Ca0.7MnO3薄膜中主要和次要I-V回路的非对称逻辑滞回建模","authors":"W. R. Acevedo, D. Rubi, F. G. Marlasca, F. Golmar, U. Lüders, J. Lecourt, J. Suñé, P. Levy, E. Miranda","doi":"10.1109/MEMRISYS.2015.7378398","DOIUrl":null,"url":null,"abstract":"The conduction characteristics of La1/3Ca2/3MnO3 (LCMO) films grown by pulsed laser deposition were investigated. The devices exhibit bipolar resistive switching effect with intermediate conduction states achievable by the application of positive and negative voltage ramps. The I-V curves are modeled using a nonlinear memristive approach based on the double-diode equation and the solution of the generalized logistic differential equation.","PeriodicalId":159041,"journal":{"name":"2015 International Conference on Memristive Systems (MEMRISYS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of the major and minor I-V loops in La0.3Ca0.7MnO3 films using asymmetric logistic hysterons\",\"authors\":\"W. R. Acevedo, D. Rubi, F. G. Marlasca, F. Golmar, U. Lüders, J. Lecourt, J. Suñé, P. Levy, E. Miranda\",\"doi\":\"10.1109/MEMRISYS.2015.7378398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The conduction characteristics of La1/3Ca2/3MnO3 (LCMO) films grown by pulsed laser deposition were investigated. The devices exhibit bipolar resistive switching effect with intermediate conduction states achievable by the application of positive and negative voltage ramps. The I-V curves are modeled using a nonlinear memristive approach based on the double-diode equation and the solution of the generalized logistic differential equation.\",\"PeriodicalId\":159041,\"journal\":{\"name\":\"2015 International Conference on Memristive Systems (MEMRISYS)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Memristive Systems (MEMRISYS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMRISYS.2015.7378398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Memristive Systems (MEMRISYS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMRISYS.2015.7378398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了脉冲激光沉积法制备La1/3Ca2/3MnO3 (LCMO)薄膜的导电特性。该器件表现出双极电阻开关效应，通过应用正、负电压坡道可实现中间导通状态。采用基于双二极管方程和广义logistic微分方程解的非线性忆阻方法对I-V曲线进行建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modeling of the major and minor I-V loops in La0.3Ca0.7MnO3 films using asymmetric logistic hysterons

The conduction characteristics of La1/3Ca2/3MnO3 (LCMO) films grown by pulsed laser deposition were investigated. The devices exhibit bipolar resistive switching effect with intermediate conduction states achievable by the application of positive and negative voltage ramps. The I-V curves are modeled using a nonlinear memristive approach based on the double-diode equation and the solution of the generalized logistic differential equation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 International Conference on Memristive Systems (MEMRISYS)

自引率

0.00%

发文量