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2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)最新文献

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STT-MRAM Product Reliability and Cross-Talk STT-MRAM产品可靠性和串扰
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798086
V. B. Naik, K. Yamane, J. Kwon, J.H. Lim, N. Balasankaran, N. Chung, L. Y. Hau, R. Chao, C. Chiang, Y. Huang, L. Pu, L. Ma, C. Meng, Y. Otani, L. Zhang, S. H. Jang, T. Ling, J. W. Ting, H. Yoon, J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth, C. Seet, J. Wong, Y. You, S. Soss, T. Chan, S. Siah
{"title":"STT-MRAM Product Reliability and Cross-Talk","authors":"V. B. Naik, K. Yamane, J. Kwon, J.H. Lim, N. Balasankaran, N. Chung, L. Y. Hau, R. Chao, C. Chiang, Y. Huang, L. Pu, L. Ma, C. Meng, Y. Otani, L. Zhang, S. H. Jang, T. Ling, J. W. Ting, H. Yoon, J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth, C. Seet, J. Wong, Y. You, S. Soss, T. Chan, S. Siah","doi":"10.1109/EDTM53872.2022.9798086","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798086","url":null,"abstract":"STT-MRAM has been showcased to be a viable solution to replace eFlash and SRAM technologies. With the increasing demand for connected edge computing and internet of things, the usage of STT-MRAM in MCU and MPU products has become the reality. The product reliability of industrial-grade (-40~125°C) 40Mb 22FDX® embedded-MRAM technology having 5x-solder reflows compatibility stack is presented. The stand-by magnetic immunity and cross-talk between MRAM and RF are also discussed.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129449450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operating-Condition Optimization of MG-MOSFETs for Low-Voltage Application mg - mosfet低压工作条件优化
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798366
Soumajit Ghosh, M. Miura-Mattausch, T. Iizuka, H. Rahaman, H. Mattausch
{"title":"Operating-Condition Optimization of MG-MOSFETs for Low-Voltage Application","authors":"Soumajit Ghosh, M. Miura-Mattausch, T. Iizuka, H. Rahaman, H. Mattausch","doi":"10.1109/EDTM53872.2022.9798366","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798366","url":null,"abstract":"Adaptive threshold-voltage controlling of thin-film multi-gate (MG) MOSFETs, using independent back-gate biasing, is applied for realizing latency and power optimization. The controlling-method validity for low-voltage operation is analyzed with the compact model HiSIM-MG, considering all internally induced charges and specific short-channel effects due to MG controlling. Current-drivability degradation due to back-gate charge and existence of an optimized operating condition are confirmed. Circuit-performance improvement of 27% by about 30% reduction of substrate thickness, while keeping switching-power loss small, is verified.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"145 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129711351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of Read Voltage Impact on Foundry BEOL RRAM for Core Integration 读电压对核心集成铸造BEOL RRAM的影响研究
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9797932
Qishen Wang, Zongwei Wang, Lin Bao, Shengyu Bao, Yaotian Ling, Yimao Cai, Ru Huang
{"title":"Investigation of Read Voltage Impact on Foundry BEOL RRAM for Core Integration","authors":"Qishen Wang, Zongwei Wang, Lin Bao, Shengyu Bao, Yaotian Ling, Yimao Cai, Ru Huang","doi":"10.1109/EDTM53872.2022.9797932","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9797932","url":null,"abstract":"In this paper, we investigated the influence of reading conditions on foundry BEOL RRAM characteristics for core transistor integration. The resistance states are statistically analyzed by varying read voltages from 0.05V to 0.4 V with a dedicated test flow to focus on cycle to cycle variation, nonlinearity and switching window. It indicates that optimization of reading voltage should be reviewed by leveraging switching window, read noise, and nonlinearity to obtain better read performance with a limited voltage swing range. This work aims to shed light on the co-impact of several common parameters in RRAM for advanced technology nodes.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129722809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays hf0.5 zr0.5 o2基1T1C FeRAM存储阵列疲劳与恢复现象的论证
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9797943
J. Okuno, T. Yonai, Takafumi Kunihiro, Kenta Konishi, M. Materano, T. Ali, M. Lederer, K. Seidel, T. Mikolajick, U. Schroeder, M. Tsukamoto, T. Umebayashi
{"title":"Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays","authors":"J. Okuno, T. Yonai, Takafumi Kunihiro, Kenta Konishi, M. Materano, T. Ali, M. Lederer, K. Seidel, T. Mikolajick, U. Schroeder, M. Tsukamoto, T. Umebayashi","doi":"10.1109/EDTM53872.2022.9797943","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9797943","url":null,"abstract":"Recently, a novel, one-transistor one-capacitor (1T1C) type, ferroelectric random-access memory (FeRAM) array was developed, and its operation was experimentally demonstrated. This array was based on ferroelectric Hf0.5Zr0.5O2 (HZO), with a capacitor under bitline structure, and was compatible with system-on-chip. In this work, bitline voltage difference distributions were examined via cycling tests and observed to not deteriorate during fatigue and recovery stress, indicating uniform charge trapping and domain de-pinning within the ferroelectric domains in the test chip.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129951302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Detection Limit of Photoluminescence Method for Determination of Carbon Impurity Concentration in Silicon 光致发光法测定硅中碳杂质浓度的检出限
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798311
Yuta Satake, M. Tajima, Shota Asahara, A. Ogura
{"title":"Detection Limit of Photoluminescence Method for Determination of Carbon Impurity Concentration in Silicon","authors":"Yuta Satake, M. Tajima, Shota Asahara, A. Ogura","doi":"10.1109/EDTM53872.2022.9798311","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798311","url":null,"abstract":"We present the detection limit of the photoluminescence method for the determination of carbon impurity concentration in silicon. The detection limit was determined by the signal-to-noise ratio of the G-line from radiation-induced defects, and was estimated at 4×1013 cm-3 under the measurement conditions in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in silicon. The limit was extendable down to 2×1013 cm-3 by optimizing the excitation power and sample temperature.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128501713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-sensor Computing Devices for Bio-inspired Vision Sensors 仿生视觉传感器的传感器内计算装置
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798059
Fuyou Liao, Yang Chai
{"title":"In-sensor Computing Devices for Bio-inspired Vision Sensors","authors":"Fuyou Liao, Yang Chai","doi":"10.1109/EDTM53872.2022.9798059","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798059","url":null,"abstract":"The rapid development of Internet of Things generates abundant data, which demands a new computing paradigm to efficiently process these data at sensory terminals. Vision is the most typical sensor-data-intensive application. Biological visual systems have considerable advantages in terms of energy efficiency and multiple functionalities. The existing artificial vision system based on conventional image sensors, memory, and processing units has complex circuitry, high power consumption, and limited perception range. We design and demonstrate optoelectronic devices for bio-inspired visual sensors, which enable image sensing, neuromorphic visual pre-processing, and effective adaptation to a wide range of light-intensity.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"6 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122548822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction and Process Control Technique of Wafer Warpage for Advanced Trench Field Plate Power MOSFETs 先进沟槽场极板功率mosfet晶圆翘曲预测及过程控制技术
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798171
Hiroaki Kato, Toshifumi Nishiguchi, Saya Shimomura, K. Miyashita, Kenya Kobayashi
{"title":"Prediction and Process Control Technique of Wafer Warpage for Advanced Trench Field Plate Power MOSFETs","authors":"Hiroaki Kato, Toshifumi Nishiguchi, Saya Shimomura, K. Miyashita, Kenya Kobayashi","doi":"10.1109/EDTM53872.2022.9798171","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798171","url":null,"abstract":"Trench Field-Plate (FP) MOSFET structure improves device characteristics. It is known, however, that trench FP-MOSFET causes wafer warpage in manufacturing process and causes wafer transfer errors in manufacturing equipment. We developed a stress-simulation model and predicted the wafer warpage change in a newly designed FP-MOSFET. By using the prediction, we could control the wafer warpage through the whole process. Moreover, we found a correlation between a trench angle and the wafer warpage after a field plate oxidation. The correlation is applicable to quality control for the trench angle in a wafer fab.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121432150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Space Exploration for Scaled FeFET Nonvolatile Memories: High-k Spacer as a Powerful Aid 缩放效应场效应晶体管非易失性存储器的设计空间探索:高k间隔器作为强大的辅助
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798076
You-Sheng Liu, Yuan-Yu Huang, P. Su
{"title":"Design Space Exploration for Scaled FeFET Nonvolatile Memories: High-k Spacer as a Powerful Aid","authors":"You-Sheng Liu, Yuan-Yu Huang, P. Su","doi":"10.1109/EDTM53872.2022.9798076","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798076","url":null,"abstract":"This work explores the design space for scaled FeFET NVMs using TCAD simulations considering the phase non-uniformity of ferroelectric. Our study suggests that, to meet the requirements including the memory window (MW) and the electric field across interfacial layer (EIL), high-k spacers can be a powerful aid for future scaled FeFETs. High-k spacers improve EIL during write operation, mean MW and the worst MW under a nonuniform phase distribution. More importantly, these improvements increase with the down-scaling of gate length.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124486958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on Wafer Temperature Monitoring in IC Process 集成电路工艺中晶圆温度监测的研究
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798054
Chao Wang, Jing Jiang
{"title":"Research on Wafer Temperature Monitoring in IC Process","authors":"Chao Wang, Jing Jiang","doi":"10.1109/EDTM53872.2022.9798054","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798054","url":null,"abstract":"The real-time and accurate temperature monitoring is very important for strictly controlling the wafer temperature in the process of integrated circuits (IC) manufacturing, which is conductive to the fabricating of high-performance chips. In this report, the current research of various methods of wafer temperature monitoring in IC process has been summarized. A wafer integrating main control circuit, batteries and multiple temperature sensors is constructed for the in-situ temperature monitoring. Combined with the reconstruction algorithm, the two-dimensional temperature field of the integrated wafer is reconstructed.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129273943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oscillator-based Dynamical Computing Platforms to Solve Combinatorial Optimization 基于振子的动态计算平台求解组合优化
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI: 10.1109/EDTM53872.2022.9798043
A. Mallick, M. K. Bashar, N. Shukla
{"title":"Oscillator-based Dynamical Computing Platforms to Solve Combinatorial Optimization","authors":"A. Mallick, M. K. Bashar, N. Shukla","doi":"10.1109/EDTM53872.2022.9798043","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798043","url":null,"abstract":"Synchronized oscillator networks provide a promising pathway towards realizing application specific analog platforms capable of solving computationally intractable problems in combinatorial optimization. Specifically, electronic oscillators offer a low-power and integrated circuit (IC)-compatible hardware solution for designing such systems. In this work, we will present the opportunities as well as the challenges of realizing oscillator-based Ising machines to solve NP-hard problems like the Maximum Cut (Max-Cut) of a graph. Using experiments and simulations, we will discuss the performance and the scalability trade-offs that need to be considered in designing such platforms. Finally, we will showcase the opportunities in novel materials and beyond-CMOS devices that can be leveraged to augment the hardware implementation and performance of such systems.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132830455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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