STT-MRAM产品可靠性和串扰

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI:10.1109/EDTM53872.2022.9798086

V. B. Naik, K. Yamane, J. Kwon, J.H. Lim, N. Balasankaran, N. Chung, L. Y. Hau, R. Chao, C. Chiang, Y. Huang, L. Pu, L. Ma, C. Meng, Y. Otani, L. Zhang, S. H. Jang, T. Ling, J. W. Ting, H. Yoon, J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth, C. Seet, J. Wong, Y. You, S. Soss, T. Chan, S. Siah

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引用次数: 0

摘要

STT-MRAM已被证明是替代eFlash和SRAM技术的可行解决方案。随着互联边缘计算和物联网需求的不断增长，STT-MRAM在MCU和MPU产品中的应用已经成为现实。介绍了工业级(-40~125°C) 40Mb 22FDX®嵌入式mram技术的产品可靠性，该技术具有5x焊料回流兼容堆栈。讨论了MRAM和RF之间的磁抗扰度和串扰。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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STT-MRAM Product Reliability and Cross-Talk

STT-MRAM has been showcased to be a viable solution to replace eFlash and SRAM technologies. With the increasing demand for connected edge computing and internet of things, the usage of STT-MRAM in MCU and MPU products has become the reality. The product reliability of industrial-grade (-40~125°C) 40Mb 22FDX® embedded-MRAM technology having 5x-solder reflows compatibility stack is presented. The stand-by magnetic immunity and cross-talk between MRAM and RF are also discussed.

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来源期刊

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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