Detection Limit of Photoluminescence Method for Determination of Carbon Impurity Concentration in Silicon

Abstract

We present the detection limit of the photoluminescence method for the determination of carbon impurity concentration in silicon. The detection limit was determined by the signal-to-noise ratio of the G-line from radiation-induced defects, and was estimated at 4×1013 cm-3 under the measurement conditions in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in silicon. The limit was extendable down to 2×1013 cm-3 by optimizing the excitation power and sample temperature.