{"title":"光致发光法测定硅中碳杂质浓度的检出限","authors":"Yuta Satake, M. Tajima, Shota Asahara, A. Ogura","doi":"10.1109/EDTM53872.2022.9798311","DOIUrl":null,"url":null,"abstract":"We present the detection limit of the photoluminescence method for the determination of carbon impurity concentration in silicon. The detection limit was determined by the signal-to-noise ratio of the G-line from radiation-induced defects, and was estimated at 4×1013 cm-3 under the measurement conditions in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in silicon. The limit was extendable down to 2×1013 cm-3 by optimizing the excitation power and sample temperature.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Detection Limit of Photoluminescence Method for Determination of Carbon Impurity Concentration in Silicon\",\"authors\":\"Yuta Satake, M. Tajima, Shota Asahara, A. Ogura\",\"doi\":\"10.1109/EDTM53872.2022.9798311\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the detection limit of the photoluminescence method for the determination of carbon impurity concentration in silicon. The detection limit was determined by the signal-to-noise ratio of the G-line from radiation-induced defects, and was estimated at 4×1013 cm-3 under the measurement conditions in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in silicon. The limit was extendable down to 2×1013 cm-3 by optimizing the excitation power and sample temperature.\",\"PeriodicalId\":158478,\"journal\":{\"name\":\"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM53872.2022.9798311\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM53872.2022.9798311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detection Limit of Photoluminescence Method for Determination of Carbon Impurity Concentration in Silicon
We present the detection limit of the photoluminescence method for the determination of carbon impurity concentration in silicon. The detection limit was determined by the signal-to-noise ratio of the G-line from radiation-induced defects, and was estimated at 4×1013 cm-3 under the measurement conditions in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in silicon. The limit was extendable down to 2×1013 cm-3 by optimizing the excitation power and sample temperature.
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