hf0.5 zr0.5 o2基1T1C FeRAM存储阵列疲劳与恢复现象的论证

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2022-03-06 DOI:10.1109/EDTM53872.2022.9797943

J. Okuno, T. Yonai, Takafumi Kunihiro, Kenta Konishi, M. Materano, T. Ali, M. Lederer, K. Seidel, T. Mikolajick, U. Schroeder, M. Tsukamoto, T. Umebayashi

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引用次数: 4

摘要

近年来，研制了一种新型的单晶体管单电容(1T1C)型铁电随机存取存储器(FeRAM)阵列，并对其工作原理进行了实验验证。该阵列基于铁电f0.5 zr0.5 o2 (HZO)，采用位线结构电容，兼容片上系统。在这项工作中，通过循环测试检查了位线电压差分布，并观察到在疲劳和恢复应力期间不会恶化，表明在测试芯片的铁电域中均匀的电荷捕获和区域去钉。

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Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays

Recently, a novel, one-transistor one-capacitor (1T1C) type, ferroelectric random-access memory (FeRAM) array was developed, and its operation was experimentally demonstrated. This array was based on ferroelectric Hf0.5Zr0.5O2 (HZO), with a capacitor under bitline structure, and was compatible with system-on-chip. In this work, bitline voltage difference distributions were examined via cycling tests and observed to not deteriorate during fatigue and recovery stress, indicating uniform charge trapping and domain de-pinning within the ferroelectric domains in the test chip.

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2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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