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30th Annual Proceedings Reliability Physics 1992最新文献

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TDDB on poly-gate single doping type capacitors 多栅单掺杂型电容器的TDDB
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187622
S. Wang, I. Chen, H. Tigelaar
{"title":"TDDB on poly-gate single doping type capacitors","authors":"S. Wang, I. Chen, H. Tigelaar","doi":"10.1109/RELPHY.1992.187622","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187622","url":null,"abstract":"Lifetime projections for polycrystalline silicon (poly) gate single doping type capacitors are complicated by gate poly depletion and inversion during the accelerated test. The presence of poly depletion and inversion was experimentally confirmed by CV and IV measurements. Simple high field straight line extrapolation was found to overestimate the 5-V lifetime by 1200 times in the 68-AA oxide equivalent poly/poly capacitors. The overestimate can be minimized by limiting the test voltage below the gate poly inversion voltage. A sensitivity analysis of the overestimate to gate poly doping is also presented.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115175675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A novel via failure mechanism in an Al-Cu/Ti double level metal system 一种新的Al-Cu/Ti双能级金属体系的通孔失效机制
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187669
P. Freiberger, K. Wu
{"title":"A novel via failure mechanism in an Al-Cu/Ti double level metal system","authors":"P. Freiberger, K. Wu","doi":"10.1109/RELPHY.1992.187669","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187669","url":null,"abstract":"An open-circuit failure mechanism for metal-to-metal via contacts in an Al-Cu/Ti metallization system during high-temperature stressing was studied. The test chips used were fully functional state-of-the-art nonvolatile memory devices fabricated on a submicron double-poly/double-metal technology. The upper metal layer (metal 2) was a 0.9 mu m-thick film of Al-0.5% Cu on a 0.1 mu m-thick Ti barrier layer, and the lower metal layer (metal 1) was 0.40 mu m-thick Al-0.5% cu film on a 0.12 mu m-thick TiN barrier layer. The temperature effect on void formation was investigated and the activation energy of open via contacts was determined. The failure mechanism can be explained by a reaction of the titanium barrier layer in metal 2 with the aluminum film in metal 1 rather than the well-known stress-induced voiding mechanism.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128701747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal stability of ferroelectric memories 铁电存储器的热稳定性
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187629
A. Gregory, R. Zucca, S. Wang, M. Brassington, N. Abt
{"title":"Thermal stability of ferroelectric memories","authors":"A. Gregory, R. Zucca, S. Wang, M. Brassington, N. Abt","doi":"10.1109/RELPHY.1992.187629","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187629","url":null,"abstract":"The authors review the latest fatigue and aging data on ferroelectric memory products and discuss thermal characteristics which limit the nonvolatile data retention storage temperature. They evaluate the effects of thermal excursions on the remanent polarization level in polycrystalline films. An excursion to an elevated temperature has been found to cause a reduction in retained polarization. The reduction is a function of the maximum temperature difference. The loss in capacitor polarization imposes constraints on the design of reliable integrated ferroelectric nonvolatile memory devices.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133277264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Built-in real-time reliability automation (BIRRA) 内置实时可靠性自动化(BIRRA)
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187658
R. Jones
{"title":"Built-in real-time reliability automation (BIRRA)","authors":"R. Jones","doi":"10.1109/RELPHY.1992.187658","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187658","url":null,"abstract":"The adoption of a novel method of processing information obtained from a scanning laser beam reflected from a surface or layer in an integrated circuit is proposed. The testing problem, including prior art, is addressed, and the concepts of local defects and yield are introduced. This is followed by a brief introduction to the optical apparatus, and a discussion of the system performance. The automation and the expert system are outlined, and its relationship to the optics is shown, including reflectivity and quantization effects. It is also shown how the acquired data may be used to increase both yield and reliability of ICs. Results demonstrate the relative importance of employing parallelism in the methodology. The methodology is related to the cost effectiveness of the system.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117354188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of grain size on defect-related early failures in VLSI interconnects 晶粒尺寸对VLSI互连中缺陷相关早期失效的影响
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187672
S. S. Menon, A.K. Gorti, K. F. Poole
{"title":"Influence of grain size on defect-related early failures in VLSI interconnects","authors":"S. S. Menon, A.K. Gorti, K. F. Poole","doi":"10.1109/RELPHY.1992.187672","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187672","url":null,"abstract":"A model for the effect of grain size on the defect-related early failures is proposed, and experimental work that supports the model reported. In addition, the differences between life-test results at accelerated and at use conditions are shown to cause problems when extrapolation of early failure times is attempted from accelerated life-tests, in the case of small-grain-size metallizations. Significant differences in the way defects influence the failure distributions at 80 degrees C and 200 degrees C indicate that it is nontrivial to determine early failure times by extrapolation of accelerated life-test results of operating conditions, when the grain size is small.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114078555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Increase in electromigration resistance by enhancing backflow effect 通过增强回流效应来增加电迁移阻力
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187648
X.X. Li, W. Zhang, Y. Ji, Z. Wang, Y.H. Cheng, G. Gao
{"title":"Increase in electromigration resistance by enhancing backflow effect","authors":"X.X. Li, W. Zhang, Y. Ji, Z. Wang, Y.H. Cheng, G. Gao","doi":"10.1109/RELPHY.1992.187648","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187648","url":null,"abstract":"The backflow effect on electromigration has been studied in terms of experiment and theory. The difference of electromigration resistance between the two materials Al-2%Cu/Ti and the stress gradient caused by a discontinuous SiO/sub 2/ overcoating layer were used to enhance the backflow intentionally to restrain the electromigration and improve the lifetime of metallization. A theoretical model is proposed to explain the formation of backflow.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131582551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bipolar reliability optimization through surface compensation of the base profile 通过基廓面补偿优化双极可靠性
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187632
J. Burnett, C. Lage, J. Hayden
{"title":"Bipolar reliability optimization through surface compensation of the base profile","authors":"J. Burnett, C. Lage, J. Hayden","doi":"10.1109/RELPHY.1992.187632","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187632","url":null,"abstract":"Increased reliability of advanced bipolar devices was achieved by compensating the surface of the base doping profile with a shallow, low-dose arsenic implant. An order of magnitude increase in lifetime was obtained without a degradation in emitter coupled logic gate delay or f/sub T/, while a 100* improvement in lifetime was exhibited with approximately a 20% degradation in gate delay and f/sub T/. This technique is applicable to non-self-aligned as well as self-aligned bipolar devices.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125300235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wire bonding of aluminum/polyimide multi-layer structures 铝/聚酰亚胺多层结构的金属丝键合
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187617
V. Murali, M. Gasparek, A. Bhansali, S.H. Chen, R. Dias
{"title":"Wire bonding of aluminum/polyimide multi-layer structures","authors":"V. Murali, M. Gasparek, A. Bhansali, S.H. Chen, R. Dias","doi":"10.1109/RELPHY.1992.187617","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187617","url":null,"abstract":"Gold thermosonic wire bonding of aluminum pads located on thick polyimide films has been studied. Bond pull and bond shear studies indicated that the weld between the wire and pad was very poor, resulting in unacceptable failure strengths and failure modes. The incorporation of a thin Ti layer between the aluminum and polyimide was found to improve the weld quality and reliability dramatically. This improvement is attributed to the increased bond pad rigidity in the presence of Ti, which allows for a more efficient transfer of the ultrasonic energy to the wire/pad interface.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115068442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Imaging VLSI cross sections by atomic force microscopy 原子力显微镜成像超大规模集成电路的横截面
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1992.187660
Gabi Neubauer, M. Lawrence, A. Dass, Thad J. Johnson
{"title":"Imaging VLSI cross sections by atomic force microscopy","authors":"Gabi Neubauer, M. Lawrence, A. Dass, Thad J. Johnson","doi":"10.1109/RELPHY.1992.187660","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187660","url":null,"abstract":"An application of atomic force microscopy (AFM) to the imaging of VLSI cross sections of metallographically polished samples is reported. AFM is a descendant of scanning tunneling microscopy (STM). Both STM and AFM are part of the rapidly growing field of scanning probe microscopy (SPM), which constructs three-dimensional contour maps of surfaces with up to atomic resolution by probing a variety of different material properties. The SPM technique has been extended in order to image VLSI cross sections as a possible alternative to conventional scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. The major advantage of AFM over conventional imaging techniques, such as scanning or transmission electron microscopy, is the higher resolution achievable in combination with higher throughput and the easy access to quantitative data, such as line widths or re-entrant angles. A very good correlation of AFM VLSI cross section images, acquired in air, was observed with those acquired by SEM and TEM.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128939056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
The effect of surface roughness of Si/sub 3/N/sub 4/ films on TDDB characteristics of ONO films Si/sub 3/N/sub 4/薄膜表面粗糙度对ONO薄膜TDDB特性的影响
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1992.187619
H. Tanaka, H. Uchida, N. Hirashita, T. Ajioka
{"title":"The effect of surface roughness of Si/sub 3/N/sub 4/ films on TDDB characteristics of ONO films","authors":"H. Tanaka, H. Uchida, N. Hirashita, T. Ajioka","doi":"10.1109/RELPHY.1992.187619","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187619","url":null,"abstract":"The surface roughness of Si/sub 3/N/sub 4/ films was found to become higher and to cause degradation of time-dependent dielectric breakdown (TDDB) characteristics of ONO films with increasing deposition temperature of Si/sub 3/N/sub 4/ films. A local thinning of ONO films, evaluated from the TDDB characteristics, agreed with the surface roughness measured by the atomic force microscope (AFM) and the cross-sectional transmission electron microscope. The dependence of the time to breakdown of ONO films on the deposition temperature was interpreted by electric field intensification due to the surface roughness of Si/sub 3/N/sub 4/ films.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133173439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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