Imaging VLSI cross sections by atomic force microscopy

Gabi Neubauer, M. Lawrence, A. Dass, Thad J. Johnson
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引用次数: 13

Abstract

An application of atomic force microscopy (AFM) to the imaging of VLSI cross sections of metallographically polished samples is reported. AFM is a descendant of scanning tunneling microscopy (STM). Both STM and AFM are part of the rapidly growing field of scanning probe microscopy (SPM), which constructs three-dimensional contour maps of surfaces with up to atomic resolution by probing a variety of different material properties. The SPM technique has been extended in order to image VLSI cross sections as a possible alternative to conventional scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. The major advantage of AFM over conventional imaging techniques, such as scanning or transmission electron microscopy, is the higher resolution achievable in combination with higher throughput and the easy access to quantitative data, such as line widths or re-entrant angles. A very good correlation of AFM VLSI cross section images, acquired in air, was observed with those acquired by SEM and TEM.<>
原子力显微镜成像超大规模集成电路的横截面
本文报道了原子力显微镜(AFM)在超大规模集成电路(VLSI)金相抛光样品横截面成像中的应用。AFM是扫描隧道显微镜(STM)的发展。STM和AFM都是快速发展的扫描探针显微镜(SPM)领域的一部分,扫描探针显微镜通过探测各种不同的材料特性,以高达原子分辨率构建表面的三维等高线图。SPM技术已经得到扩展,以便对超大规模集成电路的横截面进行成像,作为传统扫描电子显微镜(SEM)和透射电子显微镜(TEM)技术的可能替代方案。AFM与传统成像技术(如扫描或透射电子显微镜)相比的主要优势是可以实现更高的分辨率,同时具有更高的吞吐量,并且易于获得定量数据,如线宽或重入角。在空气中获得的AFM VLSI截面图像与SEM和TEM获得的图像具有很好的相关性
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