{"title":"通过基廓面补偿优化双极可靠性","authors":"J. Burnett, C. Lage, J. Hayden","doi":"10.1109/RELPHY.1992.187632","DOIUrl":null,"url":null,"abstract":"Increased reliability of advanced bipolar devices was achieved by compensating the surface of the base doping profile with a shallow, low-dose arsenic implant. An order of magnitude increase in lifetime was obtained without a degradation in emitter coupled logic gate delay or f/sub T/, while a 100* improvement in lifetime was exhibited with approximately a 20% degradation in gate delay and f/sub T/. This technique is applicable to non-self-aligned as well as self-aligned bipolar devices.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Bipolar reliability optimization through surface compensation of the base profile\",\"authors\":\"J. Burnett, C. Lage, J. Hayden\",\"doi\":\"10.1109/RELPHY.1992.187632\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Increased reliability of advanced bipolar devices was achieved by compensating the surface of the base doping profile with a shallow, low-dose arsenic implant. An order of magnitude increase in lifetime was obtained without a degradation in emitter coupled logic gate delay or f/sub T/, while a 100* improvement in lifetime was exhibited with approximately a 20% degradation in gate delay and f/sub T/. This technique is applicable to non-self-aligned as well as self-aligned bipolar devices.<<ETX>>\",\"PeriodicalId\":154383,\"journal\":{\"name\":\"30th Annual Proceedings Reliability Physics 1992\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual Proceedings Reliability Physics 1992\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1992.187632\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bipolar reliability optimization through surface compensation of the base profile
Increased reliability of advanced bipolar devices was achieved by compensating the surface of the base doping profile with a shallow, low-dose arsenic implant. An order of magnitude increase in lifetime was obtained without a degradation in emitter coupled logic gate delay or f/sub T/, while a 100* improvement in lifetime was exhibited with approximately a 20% degradation in gate delay and f/sub T/. This technique is applicable to non-self-aligned as well as self-aligned bipolar devices.<>
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