2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献_第7页

Moisture diffusion modeling and application in a 3D RF module subject to moisture absorption and desorption loads 受吸湿和解吸载荷影响的三维射频模块中的水分扩散建模及应用

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464578

Liping Zhu, D. Monthei, Gene Lambird, Wally Holgado

{"title":"Moisture diffusion modeling and application in a 3D RF module subject to moisture absorption and desorption loads","authors":"Liping Zhu, D. Monthei, Gene Lambird, Wally Holgado","doi":"10.1109/ESIME.2010.5464578","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464578","url":null,"abstract":"Moisture induced interfacial delamination failures are often found in a microelectronic package within die attach epoxy and laminate substrate during moisture sensitivity reliability test. In this paper, a piecewise normalization approach is proposed to simulate moisture sensitivity test with both preconditioning absorption and reflow desorption phases. A bi-material model with analytical solutions is used to validate the modeling approach. It is shown that the moisture concentration using proposed modeling approach can be correlated well with analytical solutions in both preconditioning absorption and reflow desorption phases. The modeling approach then has been applied to a 3D RF module, a typical system in package, to effectively obtain distribution of moisture concentration which is one of key parameters in calculation of moisture induced hygroscopic stress and vapor pressure induced stress and thus the moisture induced risk can be quickly assessed in early product development for optimal design to achieve a goal of design for reliability.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122991057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Detailed investigation on the creep damage accumulation of lead-free solder joints under accelerated temperature cycling 加速温度循环作用下无铅焊点蠕变损伤积累的详细研究

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464516

Y. S. Chan, S. Lee

{"title":"Detailed investigation on the creep damage accumulation of lead-free solder joints under accelerated temperature cycling","authors":"Y. S. Chan, S. Lee","doi":"10.1109/ESIME.2010.5464516","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464516","url":null,"abstract":"Though being accepted and widely employed for decades, there remains no consensus in the industry on the selection of an optimum temperature profile for the accelerated temperature cycling (ATC) test for the evaluation of board level solder joint reliability. It is generally agreed that broader temperature range and higher mean temperature should result in shorter thermal fatigue life. Yet, people have different opinions on the selection of the ramp rate and the dwell time. It was believed that the ramp rate has little influence on the solder joint thermal fatigue life. Emphasis has been put on the design of a suitable dwell time. Therefore, the JEDEC and the IPC standards did not impose strict requirements on the selection of the ramp rate. On the other hand, a certain range of dwell times were recommended. Nevertheless, there were publications showing that the ramp rate may be important and, in some situations, may even overrule the dwell time. This study attempts to investigate in detail the creep damage accumulation inside the solder joint during the ramp time and the dwell time for all practical loading conditions. Based on numerous computational simulation results, the present study reveals that there actually exist two types of creep damage accumulation. One of them corresponds to a “mild” loading condition where the creep damage is mostly accumulated during the dwell time. Another one corresponds to a “severe” loading condition in which the ramp time contributes most of the creep damage accumulation.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123499599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Thermo-mechanical simulations of RF-MEMS 0-level package based on wafer bonding by soldering 基于晶圆焊接的RF-MEMS 0级封装热力学模拟

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464581

S. Bouwstra, R. Hageman

引用次数: 0

On the mechanical properties of Cu3Sn intermetallic compound through molecular dynamics simulation and nanoindentation testing 通过分子动力学模拟和纳米压痕测试研究Cu3Sn金属间化合物的力学性能

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464610

Wen-Hwa Chen, Hsien-Chie Cheng, Ching-Feng Yu

{"title":"On the mechanical properties of Cu3Sn intermetallic compound through molecular dynamics simulation and nanoindentation testing","authors":"Wen-Hwa Chen, Hsien-Chie Cheng, Ching-Feng Yu","doi":"10.1109/ESIME.2010.5464610","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464610","url":null,"abstract":"Cu3Sn crystal is a well-known intermetallic compound (IMC), which is often observed at the interface of Sn solder and Cu metallization. It is generally recognized as the major cause of the failure of solder bumps and electrodes in microelectronics industry. The aim of the study is to investigate the elastic mechanical properties of orthorhombic Cu3Sn crystal by way of molecular dynamics (MD) simulation and dynamic nanoindentation testing. In the MD simulations, the force field between atoms is modeled with the modified embedded atom method (MEAM). Based on the continuum mechanics assumption, the elastic stiffnesses of the Cu3Sn can be derived from the calculated energy, and then, used in the generalized Hook's law in compliance form to calculate the associated mechanical properties. Further, using the Voigt-Reuss bounds and Voigt-Reuss-Hill approximation these mechanical properties are averaged for facilitating the comparison with experimental data. Besides, the size-dependent effects on the mechanical properties of the crystal are also assessed. The numerical results show that average bulk modulus, Young's modulus, shear modulus and Poisson's ratio of the orthorhombic Cu3Sn crystal are 128.9 GPa, 132.7 GPa, 49.9 GPa and 0.328, and most importantly, they agree very well with our nanoindentation testing results and those published theoretical/experimental data in literature.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129084365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Application of numerical optimization algorithms used to investigation of thin films in nanoindentation test 数值优化算法在薄膜纳米压痕试验研究中的应用

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464549

L. Dowhan, Artur Wymysowski, O. Wittler, R. Mrossko

引用次数: 4

Two-scale vs three-scale FE analyses of shock-induced failure in polysilicon MEMS 多晶硅MEMS冲击失效的两尺度与三尺度有限元分析

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464588

S. Mariani, A. Ghisi, R. Martini, A. Corigliano, B. Simoni

{"title":"Two-scale vs three-scale FE analyses of shock-induced failure in polysilicon MEMS","authors":"S. Mariani, A. Ghisi, R. Martini, A. Corigliano, B. Simoni","doi":"10.1109/ESIME.2010.5464588","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464588","url":null,"abstract":"Shock-induced failure of polysilicon MEMS is investigated by adopting a multi-scale approach. To understand the capability of this approach and to assess its accuracy, we compare the failure forecasted through two-scale and three-scale simulations. In the first case we model the response of the device to the shocks at the package level (macroscopic scale) and at the sensor level (mesoscopic scale). In the latter case we also allow for micro-structural features of the polysilicon film constituting the movable parts of the MEMS, so as to track the failure mode. Focusing on a commercial off-the-shelf uniaxial accelerometer subject to drops, results of the three-scale approach show that the micro-cracking leading to failure is confined inside a rather narrow region close to the anchor points. Outcomes of the two-scale approach correctly match this evidence, provided an appropriately defined failure criterion for the anisotropic polysilicon film is adopted. Moreover, the time to failure predicted by the two approaches well agree. Therefore, while the three-scale approach furnishes much insights on the failure mode, the overall response of the sensor appears to be correctly (from an industrial perspective) estimated by the far simpler and more economic two-scale simulations.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130854363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Board level reliability of the advanced RF power packaging 板级可靠性的先进射频功率封装

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464543

C. Yuan, M. Asis, Joey Salta, W. V. van Driel

{"title":"Board level reliability of the advanced RF power packaging","authors":"C. Yuan, M. Asis, Joey Salta, W. V. van Driel","doi":"10.1109/ESIME.2010.5464543","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464543","url":null,"abstract":"As the market demand of high power, high frequency and high efficiency, the advanced RF power packaging and assembly technology is facing the challenge of new material and new design. Improving the thermal conductivity of the heatsink (flange) is one of the effective ways to obtain low thermal resistance (Rth) component. Compared to the silicon transistors, the low-cost, high thermal conductivity material exhibits lower structural stiffness than the flange material which is widely used. A good understanding of the potential failure mechanism in board level reliability is an essential for a robust packaging development. This paper will focus on the board level reliability and modeling technique for bolt down assembly process. A modified three-point bending (3ptB) test method is also used to charcterised the structural stiffness of the packaging. Hence, the model is able to predict the ringframe crack of the particular package design which is under the board level thermal cycling test. Afterwards, impact of the flatness of the application board, flatness of the flange and the pitch of the mounting screws will be described.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133084350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Wire bonding the future: a combined experimental and numerical approach to improve the Cu-wire bonding quality 铜线键合的未来:实验与数值相结合的方法来提高铜线键合的质量

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464572

E. Spaan, E. Ooms, W. V. van Driel, C. Yuan, D.G. Yang, G.Q. Zhang

引用次数: 14

Measurement of viscoelastic material properties of adhesives for SHM sensors under harsh environmental conditions 恶劣环境条件下SHM传感器粘弹性材料性能的测量

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464563

B. Boehme, M. Roellig, K. Wolter

引用次数: 4

Electro-thermo-mechanical simulation of automotive MOSFET transistor 汽车MOSFET晶体管的电-热-机械仿真

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI: 10.1109/ESIME.2010.5464597

H. Feral, X. Chauffleur, J. Fradin

引用次数: 0